JPS5712581A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5712581A
JPS5712581A JP8704080A JP8704080A JPS5712581A JP S5712581 A JPS5712581 A JP S5712581A JP 8704080 A JP8704080 A JP 8704080A JP 8704080 A JP8704080 A JP 8704080A JP S5712581 A JPS5712581 A JP S5712581A
Authority
JP
Japan
Prior art keywords
layer
active layer
grating
reflection
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8704080A
Other languages
Japanese (ja)
Inventor
Kazuhisa Kaede
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8704080A priority Critical patent/JPS5712581A/en
Publication of JPS5712581A publication Critical patent/JPS5712581A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To contrive to make a single mode by having buried structure of the active layer and to reduce the oscillation threshold value for the subject semiconductor laser by a method wherein the Fresnel reflection of the end section on the active layer is removed and a single axis mode laser, which can be oscillated by Bragg reflection by grating alone, is obtained. CONSTITUTION:An N type InP layer 13 is laminated by performing an epitaxial growth along the convex section 12 on the substrate 11 having a narrow-stripped convex section 12 and on the layer 13, an active layer 14 of N type InGaAsP, a P type layer 15 and a waveguide passage layer 16 of P type InGaAsP, having grating sections 17 and 17', are epitaxially grown. The forbidden band width of the layer 16 is formed wider than that of the active layer 14 and is grown to the film thickness similar to the rise and fall of the substrate 11 in the state wherein the active layer is formed. Then, the beam of light coupled to the layer 16 is returned to the active layer 14 by reflection by the aid of the Bragg reflection performed at the grating section 17, a Bragg reflection is performed at the other grating 17' by coupling it to the layer 16 again and the oscillation threshold value is reduced by contriving a single mode.
JP8704080A 1980-06-26 1980-06-26 Semiconductor laser Pending JPS5712581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8704080A JPS5712581A (en) 1980-06-26 1980-06-26 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8704080A JPS5712581A (en) 1980-06-26 1980-06-26 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5712581A true JPS5712581A (en) 1982-01-22

Family

ID=13903827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8704080A Pending JPS5712581A (en) 1980-06-26 1980-06-26 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5712581A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61202488A (en) * 1985-03-06 1986-09-08 Fujitsu Ltd Manufacture of buried semiconductor laser
JPS6225485A (en) * 1985-07-25 1987-02-03 Mitsubishi Electric Corp Semiconductor laser device
JPH04502703A (en) * 1989-01-19 1992-05-21 ディコファルム　エスピーエィ Composition of low-calorie cracker-like diet food with high dietary fiber content and method for producing the same
JPH04502704A (en) * 1989-01-19 1992-05-21 ディコファルム　エスピーエィ Composition of biscuit-like diet food with high dietary fiber content and low calorie content and method for producing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61202488A (en) * 1985-03-06 1986-09-08 Fujitsu Ltd Manufacture of buried semiconductor laser
JPS6225485A (en) * 1985-07-25 1987-02-03 Mitsubishi Electric Corp Semiconductor laser device
JPH0461514B2 (en) * 1985-07-25 1992-10-01 Mitsubishi Electric Corp
JPH04502703A (en) * 1989-01-19 1992-05-21 ディコファルム　エスピーエィ Composition of low-calorie cracker-like diet food with high dietary fiber content and method for producing the same
JPH04502704A (en) * 1989-01-19 1992-05-21 ディコファルム　エスピーエィ Composition of biscuit-like diet food with high dietary fiber content and low calorie content and method for producing the same

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