JPS5712585A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5712585A
JPS5712585A JP8704480A JP8704480A JPS5712585A JP S5712585 A JPS5712585 A JP S5712585A JP 8704480 A JP8704480 A JP 8704480A JP 8704480 A JP8704480 A JP 8704480A JP S5712585 A JPS5712585 A JP S5712585A
Authority
JP
Japan
Prior art keywords
layer
substrate
active layer
mesa structure
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8704480A
Other languages
Japanese (ja)
Inventor
Shigeo Matsushita
Ikuo Mito
Kazuhisa Kaede
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8704480A priority Critical patent/JPS5712585A/en
Publication of JPS5712585A publication Critical patent/JPS5712585A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To contrive unification of lateral and axial modes for the subject semiconductor laser by a method wherein a semiconductor diffraction grating, having a prescribed pitch, is formed on a semiconductor substrate and a mesa structure, having the refractive index smaller than the active layer and including a conductor waveguide layer with a wide forbidden width, is formed on both sides or one side of an active layer. CONSTITUTION:The diffractive grating 2 is formed on the surface (100) of an InP substrate and a guide layer 3, an active layer 4 and a guide layer 5 are formed on the grating 2 successively by performing an epitaxial growth. The mesa structure consisting of the guide layers 3, 5 and an active layer 4 is formed trapezoidally on the face (1, -1 and 0) of the substrate 1. Then, P type and N type block layers 6 and 7 and a buried layer 8 are grown again using an epitaxial growing method and besides, a gap layer 8 is grown on the layer 8. Then, the narrow-stripped direction of the mesa structure is coincided with the face (1, -1 and 0) of the substrate 1, the surface of the layer 8 is flattened, a semiconductor laser having a unified lateral and axial mode is formed and its threshold value is reduced.
JP8704480A 1980-06-26 1980-06-26 Semiconductor laser Pending JPS5712585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8704480A JPS5712585A (en) 1980-06-26 1980-06-26 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8704480A JPS5712585A (en) 1980-06-26 1980-06-26 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5712585A true JPS5712585A (en) 1982-01-22

Family

ID=13903934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8704480A Pending JPS5712585A (en) 1980-06-26 1980-06-26 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5712585A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0194894A2 (en) * 1985-03-15 1986-09-17 Sharp Kabushiki Kaisha A semiconductor laser
JPS6283851A (en) * 1985-09-02 1987-04-17 マ−ク・ハンフリ−・オ　サリバン Treatment of sugar cane
JPH02185087A (en) * 1989-01-12 1990-07-19 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof
JPH0369182A (en) * 1989-08-08 1991-03-25 Furukawa Electric Co Ltd:The Semiconductor laser element
JPH03286586A (en) * 1990-04-03 1991-12-17 Nec Corp Integration type light modulator and manufacture thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0194894A2 (en) * 1985-03-15 1986-09-17 Sharp Kabushiki Kaisha A semiconductor laser
US4803690A (en) * 1985-03-15 1989-02-07 Sharp Kabushiki Kaisha Semiconductor laser
JPS6283851A (en) * 1985-09-02 1987-04-17 マ−ク・ハンフリ−・オ　サリバン Treatment of sugar cane
JPH02185087A (en) * 1989-01-12 1990-07-19 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof
JPH0369182A (en) * 1989-08-08 1991-03-25 Furukawa Electric Co Ltd:The Semiconductor laser element
JPH03286586A (en) * 1990-04-03 1991-12-17 Nec Corp Integration type light modulator and manufacture thereof

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