JPS571287A - Basic lateral mode semiconductor laser and manufacture thereof - Google Patents

Basic lateral mode semiconductor laser and manufacture thereof

Info

Publication number
JPS571287A
JPS571287A JP7448180A JP7448180A JPS571287A JP S571287 A JPS571287 A JP S571287A JP 7448180 A JP7448180 A JP 7448180A JP 7448180 A JP7448180 A JP 7448180A JP S571287 A JPS571287 A JP S571287A
Authority
JP
Japan
Prior art keywords
layer
mesa
grown
lateral mode
blocking layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7448180A
Other languages
Japanese (ja)
Inventor
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7448180A priority Critical patent/JPS571287A/en
Publication of JPS571287A publication Critical patent/JPS571287A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the stable, basic, lateral mode laser by providing a current blocking layer on both sides of a belt shaped mesa structure on an N type substrate so that said blocking layer is higher than said mesa structure, and embedding an active layer which is surrounded by a P layer characterized by a low refractive index and large inhibition handwidth in the groove formed by the mesa top and the blocking layer. CONSTITUTION:A belt shaped mesa 10, whose cross sectional area is of a trapezoidal shape and top side is of 4mum or less is formed in the (01-1) direction on the (001) surface of an N type InP substrate 1. A P<->GaP current blocking layer 2 is formed by reducing the temperature from 630 deg.C at a rate of 0.7 deg.C/min. for 120sec or less, in accordance with a liquid phase epitaxial method. At this time, nothing is grown on the top of the mesa, but, the layer 2 is grown on the surrounding surface so that the layer 2 is higher than the mesa 10. Then, an N<->InP clad 3, a nonadded InGaAsP active layer 4, a P<->InP clad 5, and a P<->InGaAsP can layer 6 are epitaxially grown consecutively. The compositions of the layer 4 and 6 are the same. Before the layer 3 is embedded in the groove 11 completely, the growing is stopped, the layer 4 and layer 5 are grown and embedded. In this constitution, light is confined in the layer 4, and the stable, basic, lateral mode oscillation can be obtained.
JP7448180A 1980-06-03 1980-06-03 Basic lateral mode semiconductor laser and manufacture thereof Pending JPS571287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7448180A JPS571287A (en) 1980-06-03 1980-06-03 Basic lateral mode semiconductor laser and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7448180A JPS571287A (en) 1980-06-03 1980-06-03 Basic lateral mode semiconductor laser and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS571287A true JPS571287A (en) 1982-01-06

Family

ID=13548500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7448180A Pending JPS571287A (en) 1980-06-03 1980-06-03 Basic lateral mode semiconductor laser and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS571287A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6014486A (en) * 1983-07-04 1985-01-25 Matsushita Electric Ind Co Ltd Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6014486A (en) * 1983-07-04 1985-01-25 Matsushita Electric Ind Co Ltd Semiconductor laser device

Similar Documents

Publication Publication Date Title
EP0192450B1 (en) A method for the production of semiconductor laser devices
JPS5710285A (en) Semiconductor laser
JPS571287A (en) Basic lateral mode semiconductor laser and manufacture thereof
US4723251A (en) Semiconductor laser having an active layer buried in a groove
JPS57183091A (en) Manufacture of optical integrated circuit
JPS57207388A (en) Manufacture of semiconductor laser
JPS5712585A (en) Semiconductor laser
JPS55108789A (en) Semiconductor laser
JPS57152180A (en) Manufacture of semiconductor laser device
JPS63124484A (en) Semiconductor laser element
JPS5712581A (en) Semiconductor laser
JPS6317356B2 (en)
JPS6430287A (en) Semiconductor laser device and manufacture thereof
JPS5666084A (en) Semiconductor light-emitting element
JPS637691A (en) Semiconductor laser device
JPS571286A (en) Semiconductor light emitting device and manufacture thereof
JPS5712587A (en) Hetero-structure semiconductor laser
JPS56112786A (en) Manufacture of semiconductor laser
JPS6351558B2 (en)
JPS5698889A (en) Ingaasp semiconductor laser
JPS56124288A (en) Single transverse mode semiconductor laser
JPS55125691A (en) Distributed feedback type semiconductor laser
JPS57139982A (en) Semiconductor laser element
JPS5748286A (en) Manufacture of buried hetero structured semiconductor laser
JPS5624995A (en) Manufacture of semiconductor laser