JPS57207388A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS57207388A
JPS57207388A JP9249781A JP9249781A JPS57207388A JP S57207388 A JPS57207388 A JP S57207388A JP 9249781 A JP9249781 A JP 9249781A JP 9249781 A JP9249781 A JP 9249781A JP S57207388 A JPS57207388 A JP S57207388A
Authority
JP
Japan
Prior art keywords
layer
mesa structure
clad layer
onto
type inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9249781A
Other languages
Japanese (ja)
Inventor
Yuichi Ide
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9249781A priority Critical patent/JPS57207388A/en
Publication of JPS57207388A publication Critical patent/JPS57207388A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Abstract

PURPOSE:To obtain a laser, which is stable at low threshold current and oscillates in lateral mode form, by a method wherein mesa structure consisting of an active layer and a clad layer is formed onto a semiconductor substrate, a layer with a conduction type reverse to the clad layer is grown while burying the mesa structure, an opening is bored while being made correspond to the mesa structure and an impurity region with the same conduction type as the clad layer is shaped onto the clad layer through impurity diffusion. CONSTITUTION:An N type InP clad layer 2, an InGaAsP active layer 3 and a P type InP clad layer 4 are laminated onto an N type InP substrate 1 and grown in epitaxial form in a liquid phase, and a striped SiO2 film mask 13 is shaped onto the clad layer 4. The layer 4 and successively the layer 3 are etched and the striped mesa structure is formed, the mask 13 is removed, and a P type InP region 11 is diffused and molded to the surface layer section of the layer 2 at the both sides while using the mesa structure as a mask. An N type InP layer 12 is grown onto the whole surface while burying the mesa structure and coated with an SiO2 film 7, the opening is bored while being opposed to the mesa structure, the surface and side surface of the mesa structure are coated, Zn, etc. are diffused and a P type region 8 is formed.
JP9249781A 1981-06-16 1981-06-16 Manufacture of semiconductor laser Pending JPS57207388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9249781A JPS57207388A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9249781A JPS57207388A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57207388A true JPS57207388A (en) 1982-12-20

Family

ID=14055932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9249781A Pending JPS57207388A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57207388A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170993A (en) * 1984-02-16 1985-09-04 Fujikura Ltd Semiconductor laser
EP0185854A2 (en) * 1984-09-26 1986-07-02 Siemens Aktiengesellschaft Buried heterostructure semiconductor laser diode
US4777148A (en) * 1985-01-30 1988-10-11 Massachusetts Institute Of Technology Process for making a mesa GaInAsP/InP distributed feedback laser
US5028563A (en) * 1989-02-24 1991-07-02 Laser Photonics, Inc. Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays
US5119388A (en) * 1989-02-24 1992-06-02 Laser Photonics, Inc. Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170993A (en) * 1984-02-16 1985-09-04 Fujikura Ltd Semiconductor laser
EP0185854A2 (en) * 1984-09-26 1986-07-02 Siemens Aktiengesellschaft Buried heterostructure semiconductor laser diode
EP0185854A3 (en) * 1984-09-26 1987-09-23 Siemens Aktiengesellschaft Buried heterostructure semiconductor laser diode
US4777148A (en) * 1985-01-30 1988-10-11 Massachusetts Institute Of Technology Process for making a mesa GaInAsP/InP distributed feedback laser
US5028563A (en) * 1989-02-24 1991-07-02 Laser Photonics, Inc. Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays
US5119388A (en) * 1989-02-24 1992-06-02 Laser Photonics, Inc. Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays

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