JPS57190390A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS57190390A
JPS57190390A JP7592581A JP7592581A JPS57190390A JP S57190390 A JPS57190390 A JP S57190390A JP 7592581 A JP7592581 A JP 7592581A JP 7592581 A JP7592581 A JP 7592581A JP S57190390 A JPS57190390 A JP S57190390A
Authority
JP
Japan
Prior art keywords
layer
type
clad layer
region
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7592581A
Other languages
Japanese (ja)
Inventor
Shinsuke Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7592581A priority Critical patent/JPS57190390A/en
Publication of JPS57190390A publication Critical patent/JPS57190390A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the laser element with which a stabilized lateral mode oscillation can be performed by a method wherein, when a stripe-shaped active region is formed on a compound semiconductor substrate and a clad layer is coated on the above, a uniconductive type clad layer is formed on the active layer and the clad layer connected to the above is formed in reverse conductive type. CONSTITUTION:An insulating InP clad layer 11 and a P type clad layer 12 are formed and laminated on an N type InP substrate 10, and a striped V-shape groove 13 is provided in the center part of the above in such a manner that its point is entering the layer 11. Then, an N type InP GaAs active region 14 is formed in the groove 13 only, and an N type InP clad layer 15 is coated on the whole surface including the region 14. Subsequently, a mask 16 consisting of an SiO2 film is provided at the position, which does not overlap with the layer 14, on the surface of the layer 15, and Cd is diffused on the part, wherein region 14 is not contained, in the layer 15 and a P type region 17 is formed in such a manner that it is entering into the layer 11. Then, an N type electrode 19 and a P type electrode 20 are installed on the surface pinching the mask 16, and an element having an excellent dynamic characteristic can be obtained.
JP7592581A 1981-05-20 1981-05-20 Semiconductor laser element Pending JPS57190390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7592581A JPS57190390A (en) 1981-05-20 1981-05-20 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7592581A JPS57190390A (en) 1981-05-20 1981-05-20 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS57190390A true JPS57190390A (en) 1982-11-22

Family

ID=13590353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7592581A Pending JPS57190390A (en) 1981-05-20 1981-05-20 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57190390A (en)

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