JPS5513991A - Method of manufacturing semiconductor laser - Google Patents
Method of manufacturing semiconductor laserInfo
- Publication number
- JPS5513991A JPS5513991A JP8785378A JP8785378A JPS5513991A JP S5513991 A JPS5513991 A JP S5513991A JP 8785378 A JP8785378 A JP 8785378A JP 8785378 A JP8785378 A JP 8785378A JP S5513991 A JPS5513991 A JP S5513991A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- type
- layer
- sides
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To obtain the high reproducibility of the laser capable of controlling the oscillation mode in the parallel direction to the active layer by providing the light absorbers at both sides of the current injection area in the form of stripe.
CONSTITUTION: After coating a photo regist 18 on an n-type substrate 9 having 100 plane, a groove 19 with the width narrower than the stripe portion and the inclined wall having 111A plane in the direction (0-1-1) is formed and at both sides of the groove 19 formed are grooves 17 with the inclined wall having 111A plane in the direction (0-1-1). Then, a n-type layer 10, a p-type active layer 11, a p-type layer 12 and a p-type layer 13 are formed through the epitaxial growth in turn. On the layer 13 coated is a insulation film 14 provided with a window at the position above the groove 19, on which a p-type electrode 16 is formed, and on the surface of the substrate 9 formed is an n-type electrode 15. In this structure, a stripe portion 20 between the grooves 17 and 19 is formed to have a layer depth t1 thinner than t3 at the outside of the groove 17. Thus, with the provision of the grooves 17 at both sides of the groove 19, the light leaks at the both sides of the stripe portion and this will lead the reduction of the growth rate of the light absorbed through the substrate 9.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8785378A JPS5513991A (en) | 1978-07-18 | 1978-07-18 | Method of manufacturing semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8785378A JPS5513991A (en) | 1978-07-18 | 1978-07-18 | Method of manufacturing semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5513991A true JPS5513991A (en) | 1980-01-31 |
| JPS6146995B2 JPS6146995B2 (en) | 1986-10-16 |
Family
ID=13926435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8785378A Granted JPS5513991A (en) | 1978-07-18 | 1978-07-18 | Method of manufacturing semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5513991A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60239087A (en) * | 1985-05-02 | 1985-11-27 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor laser device |
| JPS61179590A (en) * | 1985-05-14 | 1986-08-12 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| JP2009088425A (en) * | 2007-10-03 | 2009-04-23 | Sony Corp | Semiconductor laser, and manufacturing method therefor |
-
1978
- 1978-07-18 JP JP8785378A patent/JPS5513991A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60239087A (en) * | 1985-05-02 | 1985-11-27 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor laser device |
| JPS6238875B2 (en) * | 1985-05-02 | 1987-08-20 | Matsushita Electric Ind Co Ltd | |
| JPS61179590A (en) * | 1985-05-14 | 1986-08-12 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| JP2009088425A (en) * | 2007-10-03 | 2009-04-23 | Sony Corp | Semiconductor laser, and manufacturing method therefor |
| US8179941B2 (en) | 2007-10-03 | 2012-05-15 | Sony Corporation | Laser diode and method of manufacturing the same |
| US8520712B2 (en) | 2007-10-03 | 2013-08-27 | Sony Corporation | Laser diode and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6146995B2 (en) | 1986-10-16 |
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