JPS5518037A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5518037A JPS5518037A JP9078378A JP9078378A JPS5518037A JP S5518037 A JPS5518037 A JP S5518037A JP 9078378 A JP9078378 A JP 9078378A JP 9078378 A JP9078378 A JP 9078378A JP S5518037 A JPS5518037 A JP S5518037A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- active
- layers
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To provide semiconductor laser wherein a pn junction having a junction surface parallel to the bordery surface between semiconductor layers and holding therebetween an active layer is provided in an active layer region excepting a part directly above the semiconductor substrate, thereby to facilitate the lateral mode control.
CONSTITUTION: A P+ region is formed on the surface of an n-type semiconductor substrate 12, and thereafter a groove is formed along the predetermined sripe region. Thereafter, N- layer 13, n active layer 14, P- layer 5 and n- layer 16 are formed, and a layer 13a excepting the groove 13b of a layer 13 and a part of the active layer 14 are rendered into a P- type region 22. Then, a P-type region 18 is formed in the layer 16. By this organization, the P- active layers as both sides of the stripe region atually produce the reduction of the band gap, and laser oscillation light undergoes loss and a part of light soaking through the layer 13a is aborded undergoes loss. As a result, the horizontal lateral mode is restricted to the stripe part. Further, the absorption coefficient with respect to the laser oscillation light of the layer 13a is great as compared with the layer 13b, and hence the laternal mode control is easily achieved. Accordingly, it is not necessary to extremely strictly the thickness of each of layers 13a, 13b and 14.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9078378A JPS5518037A (en) | 1978-07-24 | 1978-07-24 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9078378A JPS5518037A (en) | 1978-07-24 | 1978-07-24 | Semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5518037A true JPS5518037A (en) | 1980-02-07 |
JPS6112399B2 JPS6112399B2 (en) | 1986-04-08 |
Family
ID=14008189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9078378A Granted JPS5518037A (en) | 1978-07-24 | 1978-07-24 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5518037A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5789286A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor laser element |
JPS57178396A (en) * | 1981-04-27 | 1982-11-02 | Sharp Corp | Semiconductor laser |
-
1978
- 1978-07-24 JP JP9078378A patent/JPS5518037A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5789286A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor laser element |
JPS57178396A (en) * | 1981-04-27 | 1982-11-02 | Sharp Corp | Semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
JPS6112399B2 (en) | 1986-04-08 |
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