JPS57198674A - Embedded type semiconductor laser - Google Patents

Embedded type semiconductor laser

Info

Publication number
JPS57198674A
JPS57198674A JP8262381A JP8262381A JPS57198674A JP S57198674 A JPS57198674 A JP S57198674A JP 8262381 A JP8262381 A JP 8262381A JP 8262381 A JP8262381 A JP 8262381A JP S57198674 A JPS57198674 A JP S57198674A
Authority
JP
Japan
Prior art keywords
embedded
stripe part
junction
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8262381A
Other languages
Japanese (ja)
Inventor
Itsuo Umeo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8262381A priority Critical patent/JPS57198674A/en
Publication of JPS57198674A publication Critical patent/JPS57198674A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce leaking currents from the side surface of a stripe part, when the embedded type semiconductor laser is constituted by the mesa type stripe part wherein a laser current is flowed and embedded parts on both sides, by forming respective P-N junction of the stripe part and the embedded part separately. CONSTITUTION:On an n type InP substrate 1, an n type InGaAsP active layer 2 and a p type InP clad layer 3 are layered and epitaxially grown in a liquid phase. Mesa etching is performed in the layers 3 and 2 and the substrate, and the stripe part is provided on the substrate. Then, a p type InP embedded layer 4 and an n type InP embedded layer 5 are layered and formed on both sides of the stripe part also by the liquid phase epitaxial growth method so that the surface becomes flush with the surface of the layer 3. The P-N junction is also formed here. Thereafter an electrode is deposited on the surfaces of the layers 3 and 5, and an electrode is deposited on the back surface of the substrate 1. In this constitution, the metallic junction and the electric junction are separated. Even through the side surface of the stripe part is roughened, the built in voltage of the P-N junction generated between the embedded layers becomes high, and the leaking current from the side surface of the stripe part is decreased.
JP8262381A 1981-05-30 1981-05-30 Embedded type semiconductor laser Pending JPS57198674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8262381A JPS57198674A (en) 1981-05-30 1981-05-30 Embedded type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8262381A JPS57198674A (en) 1981-05-30 1981-05-30 Embedded type semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57198674A true JPS57198674A (en) 1982-12-06

Family

ID=13779573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8262381A Pending JPS57198674A (en) 1981-05-30 1981-05-30 Embedded type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57198674A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117288A (en) * 1982-12-24 1984-07-06 Mitsubishi Electric Corp Manufacture of semiconductor light emitting device
JPS59205788A (en) * 1983-05-09 1984-11-21 Mitsubishi Electric Corp Semiconductor laser
JPS60102790A (en) * 1983-11-09 1985-06-06 Mitsubishi Electric Corp Manufacture of semiconductor light-emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390786A (en) * 1977-01-20 1978-08-09 Matsushita Electric Ind Co Ltd Semiconductor light emitting device and its production

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390786A (en) * 1977-01-20 1978-08-09 Matsushita Electric Ind Co Ltd Semiconductor light emitting device and its production

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117288A (en) * 1982-12-24 1984-07-06 Mitsubishi Electric Corp Manufacture of semiconductor light emitting device
JPS59205788A (en) * 1983-05-09 1984-11-21 Mitsubishi Electric Corp Semiconductor laser
JPS60102790A (en) * 1983-11-09 1985-06-06 Mitsubishi Electric Corp Manufacture of semiconductor light-emitting device

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