JPS57198688A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JPS57198688A JPS57198688A JP8401981A JP8401981A JPS57198688A JP S57198688 A JPS57198688 A JP S57198688A JP 8401981 A JP8401981 A JP 8401981A JP 8401981 A JP8401981 A JP 8401981A JP S57198688 A JPS57198688 A JP S57198688A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type inp
- type
- substrate
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To decrease a wattless current and to obtain the element having the high light emitting efficiency by providing a groove, which enters a substrate, in an N type InP substrate, on which P type and N type InP layers are grown, providing an InGaAsP active layer in said groove through an N type InP layer, and surrounding it by the N type InP layer. CONSTITUTION:On an N type InP substrate 31, a P type InP layer 34, an N type InP layer 35, and a P type InP layer 36 are layered and epitaxially grown in a liquid phase. The groove, which enters the substrate 31 from the central part of the surface of the layer 36 and has a desired stripe width, is formed. Then the inside of the groove is buried by an N type InP layer 32. An InGaAs active layer 33 is deposited on the surface of the layer 32. An N type InP layer 37 and an InGaAsP layer 38 having the same composition of the layer 33 are deposited on the layer 36 surrounding said layters. Thereafter, a P type InP layer 39 is grown on the entire surface so as to bury the still remaining groove on the layer 33. The surface is coated bya P<+> type InGaAsP layer 40. A P side electrode 102 is deposited on the 40, and an N type electrode 101 is deposited on the back surface of the substrate 31.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8401981A JPS57198688A (en) | 1981-06-01 | 1981-06-01 | Semiconductor light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8401981A JPS57198688A (en) | 1981-06-01 | 1981-06-01 | Semiconductor light emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57198688A true JPS57198688A (en) | 1982-12-06 |
Family
ID=13818849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8401981A Pending JPS57198688A (en) | 1981-06-01 | 1981-06-01 | Semiconductor light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57198688A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60242692A (en) * | 1984-05-17 | 1985-12-02 | Oki Electric Ind Co Ltd | Light-emitting element and manufacture thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5113588A (en) * | 1974-07-24 | 1976-02-03 | Hitachi Ltd |
-
1981
- 1981-06-01 JP JP8401981A patent/JPS57198688A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5113588A (en) * | 1974-07-24 | 1976-02-03 | Hitachi Ltd |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60242692A (en) * | 1984-05-17 | 1985-12-02 | Oki Electric Ind Co Ltd | Light-emitting element and manufacture thereof |
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