JPS5712587A - Hetero-structure semiconductor laser - Google Patents

Hetero-structure semiconductor laser

Info

Publication number
JPS5712587A
JPS5712587A JP8704680A JP8704680A JPS5712587A JP S5712587 A JPS5712587 A JP S5712587A JP 8704680 A JP8704680 A JP 8704680A JP 8704680 A JP8704680 A JP 8704680A JP S5712587 A JPS5712587 A JP S5712587A
Authority
JP
Japan
Prior art keywords
layer
substrate
type
active layer
protrusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8704680A
Other languages
Japanese (ja)
Inventor
Akira Ishikawa
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8704680A priority Critical patent/JPS5712587A/en
Publication of JPS5712587A publication Critical patent/JPS5712587A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To form the epitaxial layer easily as well as to stabilize the single lateral mode oscillation for the subject semiconductor laser by a method wherein a concaved section having a flat bottom is provided at the top of the narrow-stripped protrusion on a substrate and a flat waveguide layer having an intermediate refractive index between the active layer and the substrate, and an active layer are provided at the concaved section. CONSTITUTION:The narrow-stripped protrusion 1b is formed on the N type InP substrate 1 by performing a photoetching method and a concaved section, having the flat bottom, is formed at the top of the protrusion 1b. On the substrate 1 whereon the concaved section has been formed as above, a waveguide layer 21, a semiconductor layer 22, N type active layers 14 and 15, a P type clad layer 6 and an N type cap layer 7 are epitaxially grown successively. Besides, a P type current injection layer 8 is formed in such manner that the layer will not reach the active layer 15 from the upper section of the mesa structure, an N type and a P type ohmic electrodes 9 and 10 are formed on the substrate 1 and the layer 7, and then the concaved section is formed, thereby enabling to easily form the flat waveguide layer 21, having the intermediate refractive index between the substrate 1 and the active layer 15, and the active layer 15.
JP8704680A 1980-06-26 1980-06-26 Hetero-structure semiconductor laser Pending JPS5712587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8704680A JPS5712587A (en) 1980-06-26 1980-06-26 Hetero-structure semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8704680A JPS5712587A (en) 1980-06-26 1980-06-26 Hetero-structure semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5712587A true JPS5712587A (en) 1982-01-22

Family

ID=13903990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8704680A Pending JPS5712587A (en) 1980-06-26 1980-06-26 Hetero-structure semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5712587A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177086U (en) * 1981-05-06 1982-11-09
JPS61192271A (en) * 1985-02-20 1986-08-26 Nitto Seifun Kk Buckwheat tea
JPS6460343A (en) * 1987-08-28 1989-03-07 Masayuki Yano Konjak vermicelli

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177086U (en) * 1981-05-06 1982-11-09
JPS6225179Y2 (en) * 1981-05-06 1987-06-27
JPS61192271A (en) * 1985-02-20 1986-08-26 Nitto Seifun Kk Buckwheat tea
JPH0581231B2 (en) * 1985-02-20 1993-11-11 Nitto Flour Milling
JPS6460343A (en) * 1987-08-28 1989-03-07 Masayuki Yano Konjak vermicelli

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