JPS5727094A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5727094A
JPS5727094A JP10226180A JP10226180A JPS5727094A JP S5727094 A JPS5727094 A JP S5727094A JP 10226180 A JP10226180 A JP 10226180A JP 10226180 A JP10226180 A JP 10226180A JP S5727094 A JPS5727094 A JP S5727094A
Authority
JP
Japan
Prior art keywords
layer
type
light emitting
current confining
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10226180A
Other languages
Japanese (ja)
Inventor
Yukio Watanabe
Naoto Mogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10226180A priority Critical patent/JPS5727094A/en
Publication of JPS5727094A publication Critical patent/JPS5727094A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Abstract

PURPOSE:To excellently monitor the light emitting state at the location adjacent to the light emitting region, by providing a current confining embeded layer between a semiconductor substrate and a heterogeneous junction structure. CONSTITUTION:On the N type GaAs substrate 11, is formed a P type reversely biased layer 12 (embeded layer) wherein the current confining part 12a is provided by removing the central part in a stripe shape. On said layer 12, is formed the heterogeneous junction structure 13 comprising a first clad layer 14 of N type GaAl As, a P type GaAs active layer 15, and a second clad layer 16 of P type GaAlAs. On the top of the second clad layer 16, is deposited an electrode 18 having a window 18a directly over the current confining part 12a via a P type ohmic contact layer 17. An electrode 19 is deposited on the entire bottom surface of the substrate 11.
JP10226180A 1980-07-25 1980-07-25 Semiconductor light emitting device Pending JPS5727094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10226180A JPS5727094A (en) 1980-07-25 1980-07-25 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10226180A JPS5727094A (en) 1980-07-25 1980-07-25 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5727094A true JPS5727094A (en) 1982-02-13

Family

ID=14322645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10226180A Pending JPS5727094A (en) 1980-07-25 1980-07-25 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5727094A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0833391A1 (en) * 1996-09-27 1998-04-01 Siemens Aktiengesellschaft Semiconductor device on III-V semiconductor substrate and method for fabricating it

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0833391A1 (en) * 1996-09-27 1998-04-01 Siemens Aktiengesellschaft Semiconductor device on III-V semiconductor substrate and method for fabricating it
US6339233B1 (en) 1996-09-27 2002-01-15 Siemens Aktiengesellschaft Metal clad ridge waveguide (“MCRW”) laser semiconductor structure with doped semiconductor substrate

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