JPS57126191A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS57126191A
JPS57126191A JP1144981A JP1144981A JPS57126191A JP S57126191 A JPS57126191 A JP S57126191A JP 1144981 A JP1144981 A JP 1144981A JP 1144981 A JP1144981 A JP 1144981A JP S57126191 A JPS57126191 A JP S57126191A
Authority
JP
Japan
Prior art keywords
layer
light emitting
type
active layer
emitting region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1144981A
Other languages
Japanese (ja)
Inventor
Toshihiro Kusuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1144981A priority Critical patent/JPS57126191A/en
Publication of JPS57126191A publication Critical patent/JPS57126191A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable the oscillation with a low threshold value by a method wherein a region which contacts with a light emitting region in an active layer is surrounded by a layer of reverse conduction type, and over it a buried layer of same conduction type as an active layer which has an opening in correspondence with the light emitting region is provided, and after a layer of same conduction type as the active layer is formed is the light emitting region, by burying it a clad layer of same conduction type as the active layer is provided. CONSTITUTION:On an N type InP substrate 21, the first clad layer 22 of N type InP, a P type InGaAsP active layer 23 of approximately 0.15mum thickness and an N type InP layer 24 of approximately 0.2mum thickness are grown to be laminated. Next on the layer 24, a buried layer 25 which has an opening at the center and consists of P typ InGaAsP in grown, and at the light emitting region of the layer 24 which is exposed in the opening a P type InP layer 27 is selectively deposited. Subsequenlty by burying the layer 27, the second clad layer 26 of P type InP of which thickness is made appriximately 1.5mum is grown all over the surface. By this method through limitting action against a current injected from the second clad layer 26 performed at the boundary between the active layer 23 and the layer 24, the injection effciency of the current is improved.
JP1144981A 1981-01-28 1981-01-28 Semiconductor light emitting element Pending JPS57126191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1144981A JPS57126191A (en) 1981-01-28 1981-01-28 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1144981A JPS57126191A (en) 1981-01-28 1981-01-28 Semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS57126191A true JPS57126191A (en) 1982-08-05

Family

ID=11778397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1144981A Pending JPS57126191A (en) 1981-01-28 1981-01-28 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS57126191A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62251181A (en) * 1986-04-24 1987-10-31 Jujo Kako Kk Emboss forming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62251181A (en) * 1986-04-24 1987-10-31 Jujo Kako Kk Emboss forming method

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