JPS5771191A - Photosemiconductor element - Google Patents

Photosemiconductor element

Info

Publication number
JPS5771191A
JPS5771191A JP14623280A JP14623280A JPS5771191A JP S5771191 A JPS5771191 A JP S5771191A JP 14623280 A JP14623280 A JP 14623280A JP 14623280 A JP14623280 A JP 14623280A JP S5771191 A JPS5771191 A JP S5771191A
Authority
JP
Japan
Prior art keywords
layer
light
photoabsorptive
making
photoconfining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14623280A
Other languages
Japanese (ja)
Inventor
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14623280A priority Critical patent/JPS5771191A/en
Publication of JPS5771191A publication Critical patent/JPS5771191A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a light-emitting element having a big photoconfining effect or a light-receiving element having a big quantum effect by a method wherein a semiconductor layer of a III-V family compound is formed on an InP substrate for making it into a light-emitting element or a light-receiving element, whereby an active layer or a photoabsorptive layer composing it is made of an AlCaInAs layer of a specific composition. CONSTITUTION:When a semiconductor of a III-V family compound is formed on an InP substrate, an AlGaInAs layer capable of making an energy gap 0.73-1.5 eV is used as an active layer or a photoabsorptive layer. Namely the active layer or the photoabsorptive layer is made of an AlxCayIn1-x-yAs layer of 0<x<=0.47, 0>y<=0.47. Further thereon an AluGayIn1-x-yAs layer of 0<u<=0.47, 0<=v<=0.47 having a bigger energy gap than this is laminated as the photoconfining layer or a window layer. Thereby a melt back phenomenon at the making time is eliminated to improve grid matching.
JP14623280A 1980-10-21 1980-10-21 Photosemiconductor element Pending JPS5771191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14623280A JPS5771191A (en) 1980-10-21 1980-10-21 Photosemiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14623280A JPS5771191A (en) 1980-10-21 1980-10-21 Photosemiconductor element

Publications (1)

Publication Number Publication Date
JPS5771191A true JPS5771191A (en) 1982-05-01

Family

ID=15403087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14623280A Pending JPS5771191A (en) 1980-10-21 1980-10-21 Photosemiconductor element

Country Status (1)

Country Link
JP (1) JPS5771191A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4835575A (en) * 1987-02-06 1989-05-30 Siemens Aktiengesellschaft Monolithically integrated waveguide-photodiode combination
US4999695A (en) * 1988-08-05 1991-03-12 Mitsubishi Denki Kabushiki Kaisha MSM type semiconductor light responsive element
US5060028A (en) * 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
JP2017034028A (en) * 2015-07-30 2017-02-09 三菱電機株式会社 Semiconductor photodetector

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4835575A (en) * 1987-02-06 1989-05-30 Siemens Aktiengesellschaft Monolithically integrated waveguide-photodiode combination
US4999695A (en) * 1988-08-05 1991-03-12 Mitsubishi Denki Kabushiki Kaisha MSM type semiconductor light responsive element
US5060028A (en) * 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
JP2017034028A (en) * 2015-07-30 2017-02-09 三菱電機株式会社 Semiconductor photodetector

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