JPS56103485A - Semiconductor light emission element - Google Patents

Semiconductor light emission element

Info

Publication number
JPS56103485A
JPS56103485A JP601680A JP601680A JPS56103485A JP S56103485 A JPS56103485 A JP S56103485A JP 601680 A JP601680 A JP 601680A JP 601680 A JP601680 A JP 601680A JP S56103485 A JPS56103485 A JP S56103485A
Authority
JP
Japan
Prior art keywords
layer
light emission
type
grown
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP601680A
Other languages
Japanese (ja)
Other versions
JPH0157510B2 (en
Inventor
Shigenobu Yamagoshi
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP601680A priority Critical patent/JPS56103485A/en
Publication of JPS56103485A publication Critical patent/JPS56103485A/en
Publication of JPH0157510B2 publication Critical patent/JPH0157510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a high efficiency by effectively enclosing a carrier by a method wherein AlGaInAs is used as carrier enclosed layers arranged on one side or the both sides of a light emission region, in the light emission element with a hetero structure in which InGaAsP is made the light emission region. CONSTITUTION:An N<+> type InP buffer layer 12 of an Sn dope for eliminating an influence by an N<+> type InP substrate 11 is grown on the substrate 11, and an In1-xGaxAs1-uPu(0<=x<=1, 0<=u<=1) active layer 13 to be made the light emission region is grown laminated on the layer 12. At this time, the layer 13 is made P type as an impurity by using Zn, Cd and the like, or made N type with Sn, Te and like. Thereafter, the AlyGazIn1-y-zAs(0<=y<=1, 0<=z<=1, y+z<=1) carrier enclosed layer 14 which has been made P type by doping Zn or Cd is grown on the layer 13, a P-side electrode 15 surrounded by an SiO film 6 being fitted on the layer 14, the whole surface being cover-attached with an Au layer 17 and an N-side electrode 18 with an opening 19 is fitted on the substrate 11 side.
JP601680A 1980-01-22 1980-01-22 Semiconductor light emission element Granted JPS56103485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP601680A JPS56103485A (en) 1980-01-22 1980-01-22 Semiconductor light emission element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP601680A JPS56103485A (en) 1980-01-22 1980-01-22 Semiconductor light emission element

Publications (2)

Publication Number Publication Date
JPS56103485A true JPS56103485A (en) 1981-08-18
JPH0157510B2 JPH0157510B2 (en) 1989-12-06

Family

ID=11626896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP601680A Granted JPS56103485A (en) 1980-01-22 1980-01-22 Semiconductor light emission element

Country Status (1)

Country Link
JP (1) JPS56103485A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4905060A (en) * 1987-05-29 1990-02-27 Hitachi, Ltd. Light emitting device with disordered region

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4905060A (en) * 1987-05-29 1990-02-27 Hitachi, Ltd. Light emitting device with disordered region

Also Published As

Publication number Publication date
JPH0157510B2 (en) 1989-12-06

Similar Documents

Publication Publication Date Title
JPS54115088A (en) Double hetero junction laser element of stripe type
CA2045069A1 (en) Semiconductor laser producing visible light
JPS56103485A (en) Semiconductor light emission element
JPS55140286A (en) Buried heterogeneous structure semiconductor for use in laser
JPS6414986A (en) Semiconductor laser
JPS5771191A (en) Photosemiconductor element
JPH0834338B2 (en) Semiconductor laser
JPS59208888A (en) Compound semiconductor light emitting element
EP0140645A2 (en) Semiconductor light-emitting device
ES476750A1 (en) Infra red light emissive devices.
JPS6482590A (en) Manufacture of semiconductor device
JPS5451491A (en) Semiconductor laser
JPS57141987A (en) Semiconductor laser element
JPS55123191A (en) Semiconductor light emitting device
JPS5524418A (en) Light integrated circuit
JPS6412592A (en) Semiconductor laser device
JPS57139982A (en) Semiconductor laser element
JPS5580386A (en) Manufacture of semiconductor light emitting device
JPS6449292A (en) Semiconductor light-emitting device
JPS61198688A (en) Semiconductor photodetector
JPS58118178A (en) Semiconductor light emitting element
JPS5580388A (en) Semiconductor light emitting device
CA1234421A (en) Semiconductor light-emitting device
JPS5721884A (en) Semiconductor laser
JPS6477981A (en) Semiconductor laser