JPS6414986A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6414986A
JPS6414986A JP62171525A JP17152587A JPS6414986A JP S6414986 A JPS6414986 A JP S6414986A JP 62171525 A JP62171525 A JP 62171525A JP 17152587 A JP17152587 A JP 17152587A JP S6414986 A JPS6414986 A JP S6414986A
Authority
JP
Japan
Prior art keywords
active layer
type
edge face
layer
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62171525A
Other languages
Japanese (ja)
Other versions
JP2758598B2 (en
Inventor
Isao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62171525A priority Critical patent/JP2758598B2/en
Publication of JPS6414986A publication Critical patent/JPS6414986A/en
Application granted granted Critical
Publication of JP2758598B2 publication Critical patent/JP2758598B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the deterioration of ends due to photoabsorption and the damage to the ends from occurring by a method wherein a multilayered structure including an active layer is provided; a ternary or higher III-V compound mixed crystal in different coupling length between group III atoms and group V atoms in the crystal is used as the active layer; and the carrier concentration in the active layer near the ends to be the reflecting surface or the outgoing surface is specified. CONSTITUTION:An n-type (Al0.4Ga0.6)0.5In0.5P clad layer 2, a Ga0.5 In0.5P active layer 3, a p type (Al0.4Ga0.6)In0.5P clad layer 4 and a p<+> type GaAs cap layer 9 are successively grown on an n-type GaAs substrate 1 by the MOVPE process. The active layer 3 is grown meeting the requirements of temperature at 650 deg.C and V/III ratio without doping 400 impurity. Zn as p-type impurity is diffused in the part near the edge face 8 to provide the active layer part at least near the edge face 8 with the carrier concentration of 1.5X10<18>cm<-3>. In such a constitution, a Zn diffused region 5 near the ends 8 is limited to the range of around 20mum inside the edge face 8 which are made by cleavage process.
JP62171525A 1987-07-08 1987-07-08 Semiconductor laser Expired - Lifetime JP2758598B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62171525A JP2758598B2 (en) 1987-07-08 1987-07-08 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62171525A JP2758598B2 (en) 1987-07-08 1987-07-08 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS6414986A true JPS6414986A (en) 1989-01-19
JP2758598B2 JP2758598B2 (en) 1998-05-28

Family

ID=15924734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62171525A Expired - Lifetime JP2758598B2 (en) 1987-07-08 1987-07-08 Semiconductor laser

Country Status (1)

Country Link
JP (1) JP2758598B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02213184A (en) * 1989-02-13 1990-08-24 Nec Corp Semiconductor laser
EP0437243A2 (en) * 1990-01-09 1991-07-17 Nec Corporation Semiconductor laser and process for fabricating the same
JPH04115587A (en) * 1990-09-05 1992-04-16 Nec Corp Semiconductor laser
US6165264A (en) * 1993-12-27 2000-12-26 Nec Corporation Method for semiconductor crystal growth
US6671301B1 (en) 1999-05-07 2003-12-30 Matsushita Electronics Corporation Semiconductor device and method for producing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007066957A (en) * 2005-08-29 2007-03-15 Victor Co Of Japan Ltd Semiconductor laser element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5459149A (en) * 1977-10-20 1979-05-12 Ricoh Co Ltd Thermal fixing device for copying machine
JPS5616160U (en) * 1979-07-13 1981-02-12
JPS5814868A (en) * 1981-07-20 1983-01-27 Fuji Xerox Co Ltd Heating lamp supporting device of fixing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5459149A (en) * 1977-10-20 1979-05-12 Ricoh Co Ltd Thermal fixing device for copying machine
JPS5616160U (en) * 1979-07-13 1981-02-12
JPS5814868A (en) * 1981-07-20 1983-01-27 Fuji Xerox Co Ltd Heating lamp supporting device of fixing device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02213184A (en) * 1989-02-13 1990-08-24 Nec Corp Semiconductor laser
EP0437243A2 (en) * 1990-01-09 1991-07-17 Nec Corporation Semiconductor laser and process for fabricating the same
JPH03208388A (en) * 1990-01-09 1991-09-11 Nec Corp Semiconductor laser, manufacture thereof and diffusion of impurity
JPH04115587A (en) * 1990-09-05 1992-04-16 Nec Corp Semiconductor laser
US6165264A (en) * 1993-12-27 2000-12-26 Nec Corporation Method for semiconductor crystal growth
US6671301B1 (en) 1999-05-07 2003-12-30 Matsushita Electronics Corporation Semiconductor device and method for producing the same
US7037743B2 (en) 1999-05-07 2006-05-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for producing the same

Also Published As

Publication number Publication date
JP2758598B2 (en) 1998-05-28

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