JPS6414986A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6414986A JPS6414986A JP62171525A JP17152587A JPS6414986A JP S6414986 A JPS6414986 A JP S6414986A JP 62171525 A JP62171525 A JP 62171525A JP 17152587 A JP17152587 A JP 17152587A JP S6414986 A JPS6414986 A JP S6414986A
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- type
- edge face
- layer
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To prevent the deterioration of ends due to photoabsorption and the damage to the ends from occurring by a method wherein a multilayered structure including an active layer is provided; a ternary or higher III-V compound mixed crystal in different coupling length between group III atoms and group V atoms in the crystal is used as the active layer; and the carrier concentration in the active layer near the ends to be the reflecting surface or the outgoing surface is specified. CONSTITUTION:An n-type (Al0.4Ga0.6)0.5In0.5P clad layer 2, a Ga0.5 In0.5P active layer 3, a p type (Al0.4Ga0.6)In0.5P clad layer 4 and a p<+> type GaAs cap layer 9 are successively grown on an n-type GaAs substrate 1 by the MOVPE process. The active layer 3 is grown meeting the requirements of temperature at 650 deg.C and V/III ratio without doping 400 impurity. Zn as p-type impurity is diffused in the part near the edge face 8 to provide the active layer part at least near the edge face 8 with the carrier concentration of 1.5X10<18>cm<-3>. In such a constitution, a Zn diffused region 5 near the ends 8 is limited to the range of around 20mum inside the edge face 8 which are made by cleavage process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171525A JP2758598B2 (en) | 1987-07-08 | 1987-07-08 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171525A JP2758598B2 (en) | 1987-07-08 | 1987-07-08 | Semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6414986A true JPS6414986A (en) | 1989-01-19 |
JP2758598B2 JP2758598B2 (en) | 1998-05-28 |
Family
ID=15924734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62171525A Expired - Lifetime JP2758598B2 (en) | 1987-07-08 | 1987-07-08 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2758598B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02213184A (en) * | 1989-02-13 | 1990-08-24 | Nec Corp | Semiconductor laser |
EP0437243A2 (en) * | 1990-01-09 | 1991-07-17 | Nec Corporation | Semiconductor laser and process for fabricating the same |
JPH04115587A (en) * | 1990-09-05 | 1992-04-16 | Nec Corp | Semiconductor laser |
US6165264A (en) * | 1993-12-27 | 2000-12-26 | Nec Corporation | Method for semiconductor crystal growth |
US6671301B1 (en) | 1999-05-07 | 2003-12-30 | Matsushita Electronics Corporation | Semiconductor device and method for producing the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007066957A (en) * | 2005-08-29 | 2007-03-15 | Victor Co Of Japan Ltd | Semiconductor laser element |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5459149A (en) * | 1977-10-20 | 1979-05-12 | Ricoh Co Ltd | Thermal fixing device for copying machine |
JPS5616160U (en) * | 1979-07-13 | 1981-02-12 | ||
JPS5814868A (en) * | 1981-07-20 | 1983-01-27 | Fuji Xerox Co Ltd | Heating lamp supporting device of fixing device |
-
1987
- 1987-07-08 JP JP62171525A patent/JP2758598B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5459149A (en) * | 1977-10-20 | 1979-05-12 | Ricoh Co Ltd | Thermal fixing device for copying machine |
JPS5616160U (en) * | 1979-07-13 | 1981-02-12 | ||
JPS5814868A (en) * | 1981-07-20 | 1983-01-27 | Fuji Xerox Co Ltd | Heating lamp supporting device of fixing device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02213184A (en) * | 1989-02-13 | 1990-08-24 | Nec Corp | Semiconductor laser |
EP0437243A2 (en) * | 1990-01-09 | 1991-07-17 | Nec Corporation | Semiconductor laser and process for fabricating the same |
JPH03208388A (en) * | 1990-01-09 | 1991-09-11 | Nec Corp | Semiconductor laser, manufacture thereof and diffusion of impurity |
JPH04115587A (en) * | 1990-09-05 | 1992-04-16 | Nec Corp | Semiconductor laser |
US6165264A (en) * | 1993-12-27 | 2000-12-26 | Nec Corporation | Method for semiconductor crystal growth |
US6671301B1 (en) | 1999-05-07 | 2003-12-30 | Matsushita Electronics Corporation | Semiconductor device and method for producing the same |
US7037743B2 (en) | 1999-05-07 | 2006-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for producing the same |
Also Published As
Publication number | Publication date |
---|---|
JP2758598B2 (en) | 1998-05-28 |
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