JPS6482590A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6482590A JPS6482590A JP24180987A JP24180987A JPS6482590A JP S6482590 A JPS6482590 A JP S6482590A JP 24180987 A JP24180987 A JP 24180987A JP 24180987 A JP24180987 A JP 24180987A JP S6482590 A JPS6482590 A JP S6482590A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- window
- active layer
- constituted
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain, with high yield, a semiconductor laser provided with a window structure of stable quality, by a method wherein, after a laser chip containing a double hetero junction is formed, an electrically insulative window layer whose band gap is wider than an active layer is formed by crystal growth, on at least one end surface of a resonator of the laser chip. CONSTITUTION:On a substrate 1, the following are laminated; a buffer layer 2, a current blocking layer 3, a first clad layer 4, an active layer 5, a second clad layer 6 and a contact layer 7. In order to form a window structure part, an electrically insulative window layer 8 whose band gap is larger than the active layer 5 is formed by crystal growth. In the case where the active layer 5 is constituted of Al0.1Ga0.9As, and the window layer 8 is constituted of Al0.5 Ga0.5As, light is little absorbed by the window layer 8, and high output operation is enabled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24180987A JPS6482590A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24180987A JPS6482590A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6482590A true JPS6482590A (en) | 1989-03-28 |
Family
ID=17079824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24180987A Pending JPS6482590A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6482590A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04103184A (en) * | 1990-08-23 | 1992-04-06 | Toshiba Corp | Semiconductor laser element |
| US5449276A (en) * | 1992-01-29 | 1995-09-12 | Matsushita Electric Industrial Co., Ltd. | Two stage vacuum pump having different diameter interengaging rotors |
| KR100398031B1 (en) * | 2000-10-02 | 2003-10-22 | 대한민국 | Evaporator and condenser for the heat pump using the cold air as the heat source |
| US11639817B2 (en) | 2018-01-17 | 2023-05-02 | Gree Electric Appliances, Inc. Of Zhuhai | Heat exchanger, air conditioner, and refrigerating unit |
-
1987
- 1987-09-24 JP JP24180987A patent/JPS6482590A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04103184A (en) * | 1990-08-23 | 1992-04-06 | Toshiba Corp | Semiconductor laser element |
| US5449276A (en) * | 1992-01-29 | 1995-09-12 | Matsushita Electric Industrial Co., Ltd. | Two stage vacuum pump having different diameter interengaging rotors |
| KR100398031B1 (en) * | 2000-10-02 | 2003-10-22 | 대한민국 | Evaporator and condenser for the heat pump using the cold air as the heat source |
| US11639817B2 (en) | 2018-01-17 | 2023-05-02 | Gree Electric Appliances, Inc. Of Zhuhai | Heat exchanger, air conditioner, and refrigerating unit |
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