JPS6433987A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6433987A
JPS6433987A JP19083487A JP19083487A JPS6433987A JP S6433987 A JPS6433987 A JP S6433987A JP 19083487 A JP19083487 A JP 19083487A JP 19083487 A JP19083487 A JP 19083487A JP S6433987 A JPS6433987 A JP S6433987A
Authority
JP
Japan
Prior art keywords
film
resonator
semiconductor laser
lambda
arranging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19083487A
Other languages
Japanese (ja)
Inventor
Naoshi Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19083487A priority Critical patent/JPS6433987A/en
Publication of JPS6433987A publication Critical patent/JPS6433987A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials

Abstract

PURPOSE:To obtain large light output with small driving current, and realize high reliability, by providing at least one surface of a resonator with a crystal film composed of high resistivity semiconductor having a large band gap, and arranging thereon a specified multi-layer film to increase the end surface reflectivity. CONSTITUTION:At least one surface of the resonator of a semiconductor laser is provided with a crystal film 6 composed of high resistivity semiconductor whose band gap is larger than photon energy of the laser light. On the crystal film 6, a multi-layer film is arranged to increase the end surface reflectivity. The above multi-layer film is constituted by stacking alternately any one of a silicon oxide film, a silicon nitride film, and an aluminum oxide film, and an amorphous silicon film. For example, the resonator of the semiconductor laser is constituted by arranging a double heterojunction layer containing stripe structure on an N-GaAs substrate 1. On the resonator surface, an undoped Al0.4Ga0.6As thin film 6 of 0.5mum thick is grown by epitaxial method, and thereon, lambda/4 SiO2 films 8, 9, 11, 13 and lambda/4 Si films 10, 12 are alternately formed to complete the semiconductor laser.
JP19083487A 1987-07-29 1987-07-29 Semiconductor laser device Pending JPS6433987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19083487A JPS6433987A (en) 1987-07-29 1987-07-29 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19083487A JPS6433987A (en) 1987-07-29 1987-07-29 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6433987A true JPS6433987A (en) 1989-02-03

Family

ID=16264538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19083487A Pending JPS6433987A (en) 1987-07-29 1987-07-29 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6433987A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450902A2 (en) * 1990-04-02 1991-10-09 Sharp Kabushiki Kaisha A method for the production of a semiconductor laser device
EP0477033A2 (en) * 1990-09-21 1992-03-25 Sharp Kabushiki Kaisha A semiconductor laser device
EP0558856A2 (en) * 1992-03-04 1993-09-08 Sharp Kabushiki Kaisha A method for producing a semiconductor laser device
WO2000021168A1 (en) * 1998-10-08 2000-04-13 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450902A2 (en) * 1990-04-02 1991-10-09 Sharp Kabushiki Kaisha A method for the production of a semiconductor laser device
EP0477033A2 (en) * 1990-09-21 1992-03-25 Sharp Kabushiki Kaisha A semiconductor laser device
EP0558856A2 (en) * 1992-03-04 1993-09-08 Sharp Kabushiki Kaisha A method for producing a semiconductor laser device
EP0789430A2 (en) * 1992-03-04 1997-08-13 Sharp Kabushiki Kaisha A method of producing a semiconductor laser device
EP0789430A3 (en) * 1992-03-04 1997-11-05 Sharp Kabushiki Kaisha A method of producing a semiconductor laser device
WO2000021168A1 (en) * 1998-10-08 2000-04-13 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
US6590920B1 (en) 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet

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