JPH05327121A - Surface emitting type semiconductor laser - Google Patents
Surface emitting type semiconductor laserInfo
- Publication number
- JPH05327121A JPH05327121A JP15283392A JP15283392A JPH05327121A JP H05327121 A JPH05327121 A JP H05327121A JP 15283392 A JP15283392 A JP 15283392A JP 15283392 A JP15283392 A JP 15283392A JP H05327121 A JPH05327121 A JP H05327121A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- reflection factor
- wavelength
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は面出射形半導体レーザに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface emitting semiconductor laser.
【０００２】[0002]
【従来の技術】面出射形半導体レーザは９９．９％以上
の高い反射率を持つ反射鏡を共振器に用いることで、従
来の端面出射形半導体レーザに比べ、低駆動電流化、２
次元アレイ化、高速変調等の改善が期待できる。このよ
うな半導体レーザの従来例がアプライドフィジクスレタ
ーズ誌、１９９０年、５７巻、１６号、１６０５−１６
０７ページに報告されている。本半導体レーザでは、半
導体基板上にフォトリソグラフィーとドライエッチング
で光出射方向と平行な方向に形成した円筒部分に発光層
及び２つの多層反射鏡が配置された構造になっている。
前記反射鏡にはアルミニウム砒素とガリウム砒素の４分
の１波長板とを２２−２８層積層した構造を用いること
で、９９．９％以上の高い反射率を実現し低閾値電流を
得ている。また、光通信波長帯の面出射形半導体レーザ
の高反射率反射鏡の例がアプライドフィジクスレターズ
誌、１９９１年、５９巻、９号、１０１１−１０１２ペ
ージに報告されている。この従来例ではＩｎＧａＡｌＡ
ｓ、ＩｎＡｌＡｓからなる４分の１波長板を３０周期積
層して反射鏡を形成し、９９％以上の高い反射率を得て
いる。2. Description of the Related Art A surface emitting semiconductor laser uses a reflecting mirror having a high reflectance of 99.9% or more as a resonator, so that a driving current can be reduced as compared with a conventional edge emitting semiconductor laser.
Improvements in dimensional array, high-speed modulation, etc. can be expected. A conventional example of such a semiconductor laser is applied Physics Letters magazine, 1990, Volume 57, No. 16, 1605-16.
It is reported on page 07. The present semiconductor laser has a structure in which a light emitting layer and two multilayer reflecting mirrors are arranged in a cylindrical portion formed on a semiconductor substrate by photolithography and dry etching in a direction parallel to the light emission direction.
By using a structure in which 22 to 28 layers of aluminum arsenide and a quarter-wave plate of gallium arsenide are laminated on the reflecting mirror, a high reflectance of 99.9% or more is realized and a low threshold current is obtained. .. Further, an example of a high-reflectance reflecting mirror of a surface emitting semiconductor laser in the optical communication wavelength band is reported in Applied Physics Letters, 1991, Volume 59, No. 9, pp. 1011-1012. In this conventional example, InGaAlA
A quarter-wave plate made of s, InAlAs is laminated for 30 cycles to form a reflecting mirror, and a high reflectance of 99% or more is obtained.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
屈折率の異なる半導体の４分の１波長板を多周期積層し
た構造になる反射鏡は高い反射率を得るためには０．９
μｍ帯の発光波長用で２０周期以上、通信波長帯で３０
周期が必要になる。その結果、以下２つの問題点が生じ
る。第１に、積層層厚が２つの反射板で１０−１４μｍ
必要であるために多大の結晶成長時間を要し平坦性に欠
けること、第２に、多層反射板内での荷電担体や不純物
による吸収が無視できなくなり９９．９％以上の高い反
射率が得にくいことである。このように従来の面出射形
半導体レーザには反射鏡に関し解決すべき課題があっ
た。However, a conventional reflecting mirror having a structure in which quarter-wave plates of semiconductors having different refractive indexes are laminated in multiple cycles is required to obtain a high reflectance of 0.9.
20 cycles or more for emission wavelength of μm band, 30 for communication wavelength band
A cycle is needed. As a result, the following two problems occur. First, the thickness of the laminated layer is 10-14 μm for the two reflectors.
It requires a large amount of crystal growth time and lacks flatness. Secondly, absorption by charge carriers and impurities in the multilayer reflector cannot be ignored, and a high reflectance of 99.9% or more is obtained. It's difficult. As described above, the conventional surface emitting semiconductor laser has a problem to be solved regarding the reflecting mirror.
【０００４】本発明は、以上述べた様な従来の事情に鑑
みてなされたもので、反射板を構成する材料の屈折率の
比を大きくできる構造であるためにより少ない積層層厚
と優れた反射率特性が期待できる反射板を用いたより平
坦な形状でありかつ低閾値の面出射形半導体レーザを提
供することにある。The present invention has been made in view of the conventional circumstances as described above, and has a structure in which the ratio of the refractive indexes of the materials forming the reflector can be increased, so that the laminated layer thickness is smaller and the excellent reflection is achieved. An object of the present invention is to provide a surface-emitting type semiconductor laser having a flatter shape and a lower threshold, which uses a reflection plate which can be expected to have a high rate characteristic.
【０００５】[0005]
【課題を解決するための手段】本発明の半導体レーザ
は、発光層と前記発光層を挟む２つの反射鏡が基板面と
平行に積層された構造を有する面出射形半導体レーザに
おいて、前記反射鏡が出射光の波長より小さいバンドギ
ャップ波長を有する半導体層と前記半導体層で挟まれた
空気または真空層との少なくとも１周期の繰り返しから
なる多層反射膜であることを特徴としている。The semiconductor laser of the present invention is a surface emitting semiconductor laser having a structure in which a light emitting layer and two reflecting mirrors sandwiching the light emitting layer are laminated in parallel with a substrate surface. Is a multi-layered reflective film formed by repeating at least one cycle of a semiconductor layer having a bandgap wavelength smaller than the wavelength of emitted light and an air or vacuum layer sandwiched by the semiconductor layers.
【０００６】[0006]
【作用】一般に、４分の１波長の層厚を有する２種類の
誘電体を多周期積層した多層反射膜の反射率は次式で与
えられることが知られている。 Ｒ＝［１−ｎ0 （ｎ1 ／ｎ2 ）2N］2 ／［１＋ｎ0 （ｎ1 ／ｎ2 ）2N］2 In general, it is known that the reflectance of a multilayer reflective film in which two types of dielectrics having a layer thickness of ¼ wavelength are multi-layered is given by the following equation. R = [1-n 0 ( n 1 / n 2) 2N] 2 / [1 + n 0 (n 1 / n 2) 2N] 2
【０００７】式中に、Ｒ、ｎ0 、ｎ1 、ｎ2 、及びＮ
は、多層反射鏡の反射率、基板の屈折率、第１の誘電体
の屈折率、第２の誘電体の屈折率、及び、積層した周期
数をそれぞれ示す。本発明による面出射形半導体レーザ
では、反射板を構成する２種の層に発振波長より小さい
バンドギャップ波長を有する組成でかつ４分の１波長の
層厚を有する半導体層と、空気または真空層とを用いて
いる。そのため、発振波長１．３μｍの場合ではｎ1 と
ｎ2 の比がそれぞれ３．２対１と非常に大きくできる
為、３周期の積層構造（Ｎ＝３）で反射率が９９．９
％、５周期で９９．９９％となる。このときの積層層厚
は３周期及び５周期の場合それぞれ１．３μｍ及び２．
１μｍと従来にくらべて非常に薄くできる。従って、従
来に比べ集積化が容易な平坦な形状にでき、かつ、反射
率を高くできるから、発振閾値をより低減できる。Where R, n 0 , n 1 , n 2 , and N
Indicates the reflectance of the multilayer mirror, the refractive index of the substrate, the refractive index of the first dielectric material, the refractive index of the second dielectric material, and the number of stacked cycles, respectively. In the surface emitting semiconductor laser according to the present invention, a semiconductor layer having a composition having a bandgap wavelength smaller than the oscillation wavelength and a layer thickness of a quarter wavelength, and an air or vacuum layer are used for the two types of layers constituting the reflector. And are used. Therefore, in the case of an oscillation wavelength of 1.3 μm, the ratio of n 1 and n 2 can be made extremely large to 3.2: 1, so that the reflectance is 99.9 in a laminated structure of 3 periods (N = 3).
%, It becomes 99.99% in 5 cycles. The laminated layer thicknesses at this time are 1.3 μm and 2.
It is 1 μm, which is extremely thin compared to the conventional one. Therefore, a flat shape which is easier to integrate than the conventional one can be formed, and the reflectance can be increased, so that the oscillation threshold value can be further reduced.
【０００８】[0008]
【実施例】以下、図面を参照して本発明の実施例を説明
する。図１は本発明の実施例を説明するための摸式図で
ある。出射光は基板１０と垂直な方向にでる。基板１０
は（１００）面のＳドープｎ形ＩｎＰ基板を用いた。ダ
ブルヘテロ構造１２はｎ形ＩｎＰ層、ＩｎＧａＡｓ発光
層、及びｐ形ＩｎＰ層を順次に積層した構造で、発光波
長が１．３μｍとなる量子井戸幅を有する。前記ダブル
ヘテロ構造１２を上下から挟む配置に、ｎ形多層反射膜
１１及びｐ形多層反射膜１３を形成した。ｎ形多層反射
膜１１は、厚さ１０２ｎｍのｎ形ＩｎＰ層と厚さ３２５
ｎｍのｎ形ＩｎＧａＡｓ層を３周期積層した構造を形成
した後、反射鏡となる部分のＩｎＧａＡｓ層を除去して
形成されており、厚さ１０２ｎｍのｎ形ＩｎＰ層と厚さ
３２５ｎｍの空気層１６を３周期積層した構造になって
いる。ｐ形多層反射膜１３も厚さ１０２ｎｍのｐ形Ｉｎ
Ｐ層と厚さ３２５ｎｍのｐ形ＩｎＧａＡｓ層を３周期積
層した構造を形成した後、反射鏡となる部分のＩｎＧａ
Ａｓ層を除去して形成されており、厚さ１０２ｎｍのｐ
形ＩｎＰ層と厚さ３２５ｎｍの空気層１６を３周期積層
した構造になっている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram for explaining an embodiment of the present invention. The emitted light goes out in a direction perpendicular to the substrate 10. Board 10
Was an (100) -face S-doped n-type InP substrate. The double hetero structure 12 has a structure in which an n-type InP layer, an InGaAs light emitting layer, and a p-type InP layer are sequentially stacked, and has a quantum well width with an emission wavelength of 1.3 μm. An n-type multilayer reflective film 11 and a p-type multilayer reflective film 13 were formed so as to sandwich the double hetero structure 12 from above and below. The n-type multilayer reflective film 11 includes an n-type InP layer having a thickness of 102 nm and a thickness of 325.
The n-type InGaAs layer having a thickness of 102 nm and the air layer 16 having a thickness of 325 nm are formed by forming a structure in which three periods of n-type InGaAs layers having a thickness of 3 nm are stacked, and then removing the InGaAs layer in the portion to be the reflection mirror. It has a structure in which three cycles are laminated. The p-type multilayer reflective film 13 also has a thickness of 102 nm.
After forming a structure in which a P layer and a p-type InGaAs layer having a thickness of 325 nm are stacked for three periods, the InGa of the portion to be the reflection mirror is formed.
It is formed by removing the As layer and has a p thickness of 102 nm.
The InP layer and the air layer 16 having a thickness of 325 nm are laminated for three cycles.
【０００９】電流注入に関しては、活性層１７に注入さ
れる担体のうち電子はｎ形電極１４から、基板１０を経
て、ｎ形多層反射膜１１のうち除去されていないｎ形Ｉ
ｎＧａＡｓ層及びｎ形ＩｎＰを通じて注入される。一
方、正孔はｐ形電極１５からｐ形多層反射膜１３のうち
除去されていないｐ形ＩｎＧａＡｓ層及びｐ形ＩｎＰを
通じて注入される。電子と正孔の再結合は主に活性層１
７で起き、空気層１６の部分でのみ共振器が形成される
ため、発振以降の注入電流は活性領域１６にのみ流れる
ことになり、低駆動電流、高効率の発振が可能になる。Regarding the current injection, the electrons of the carriers injected into the active layer 17 pass through the n-type electrode 14, the substrate 10 and the n-type I unremoved part of the n-type multilayer reflection film 11.
Implanted through the nGaAs layer and n-type InP. On the other hand, holes are injected from the p-type electrode 15 through the p-type InGaAs layer and p-type InP which are not removed in the p-type multilayer reflective film 13. The recombination of electrons and holes is mainly in the active layer 1
7, the resonator is formed only in the air layer 16, so that the injection current after the oscillation flows only in the active region 16, and the low driving current and the highly efficient oscillation are possible.
【００１０】次に本発明の製造方法について、図２を用
いて説明する。図２は、製造工程の各段階における断面
図を示す。まず、（１００）面を有するｎ形ＩｎＰ基板
１０の上に、厚さ３２５ｎｍでＩｎＰに格子整合した組
成のｎ形ＩｎＧａＡｓ層と厚さ１０２ｎｍのｎ形ＩｎＰ
層を３周期積層した多層反射膜１１、ｎ形ＩｎＰ層、Ｉ
ｎＧａＡｓ発光層、及びｐ形ＩｎＰ層を順次積層した構
造で、発光波長が１．３μｍとなる量子井戸幅を有する
ダブルヘテロ構造１２、及び、厚さ３２５ｎｍでＩｎＰ
に格子整合した組成のｐ形ＩｎＧａＡｓ層と厚さ１０２
ｎｍのｐ形ＩｎＰ層を３周期積層した多層反射膜１３を
ガスソース分子線エピタキシャル成長方法で積層した
（図２（ａ））。ガスソース分子線エピタキシャル成長
法では、９５０℃に加熱したクラッキングセルを通して
アルシン、ホスフィンガスを高真空チャンバーに導入
し、Ｉｎ、Ｇａ金属をそれぞれクヌーセンセルで加熱し
シャッターで制御してＩｎＰ基板に照射して成長させ
る。次に、通常のフォトリソグラフィーで形成したレジ
ストをマスクとして、幅１０μｍ、奥行き３μｍ、深さ
３．５μｍのメサをドライエッチングで形成する。レジ
スト除去後、熱ＣＶＤで形成したＳｉＯ2 層（厚さ１０
０ｎｍ）を通常のフォトリソグラフィーと化学エッチン
グによって加工しＳｉＯ2 マスク２０を形成する（図２
（ｂ）参照）。さらに、このＳｉＯ2 マスク２０をマス
クとして選択化学エッチングによって前の工程で作製し
た積層構造のうち多層反射膜１１及び１３の厚さ３２５
ｎｍのＩｎＧａＡｓ層をメサの側面からエッチングし空
気層１６を形成する（図２（ｃ）参照）。最後に、ｎ形
電極１４及びｐ形電極１５を形成する。Next, the manufacturing method of the present invention will be described with reference to FIG. 2A to 2C are cross-sectional views at each stage of the manufacturing process. First, on an n-type InP substrate 10 having a (100) plane, an n-type InGaAs layer having a composition of 325 nm and having a lattice matching with InP and an n-type InP having a thickness of 102 nm.
A multilayer reflective film 11 in which layers are stacked for three periods, an n-type InP layer, I
A double hetero structure 12 having a quantum well width having an emission wavelength of 1.3 μm, which has a structure in which an nGaAs light emitting layer and a p-type InP layer are sequentially stacked, and InP having a thickness of 325 nm.
P-type InGaAs layer having a lattice-matched composition and a thickness of 102
The multilayer reflective film 13 in which p-type InP layers each having a thickness of 3 nm were stacked for three periods was stacked by the gas source molecular beam epitaxial growth method (FIG. 2A). In the gas source molecular beam epitaxial growth method, arsine and phosphine gas are introduced into a high vacuum chamber through a cracking cell heated to 950 ° C., In and Ga metals are heated in a Knudsen cell, respectively, and controlled by a shutter to irradiate an InP substrate. Grow. Next, using a resist formed by ordinary photolithography as a mask, a mesa with a width of 10 μm, a depth of 3 μm, and a depth of 3.5 μm is formed by dry etching. After removing the resist, a SiO 2 layer (thickness 10
0 nm) is processed by ordinary photolithography and chemical etching to form a SiO 2 mask 20 (FIG. 2).
(See (b)). Further, the thickness 325 of the multilayer reflective films 11 and 13 in the laminated structure produced in the previous step by selective chemical etching using the SiO 2 mask 20 as a mask.
The InGaAs layer of nm is etched from the side surface of the mesa to form the air layer 16 (see FIG. 2C). Finally, the n-type electrode 14 and the p-type electrode 15 are formed.
【００１１】本発明の面出射形半導体レーザは厚さ１０
２ｎｍのＩｎＰ層と厚さ３２５ｎｍの空気層との対を３
周期用いており、その屈折率の比が発振波長１．３μｍ
において３．２と大きいため、３周期であっても９９．
９％の高い反射率が得られる。その結果、半導体レーザ
の高さは３μｍと従来に比べ著しく平坦化される。ま
た、９９．９％の非常に高い屈折率も５周期の多層反射
膜で得られ、発振閾値が低減できる。The surface emitting semiconductor laser of the present invention has a thickness of 10
3 pairs of 2 nm InP layer and 325 nm thick air layer
The period is used and the ratio of the refractive index is 1.3 μm for the oscillation wavelength.
Since it is as large as 3.2 at 99.
A high reflectance of 9% is obtained. As a result, the height of the semiconductor laser is 3 μm, which is significantly flattened as compared with the conventional case. Also, a very high refractive index of 99.9% can be obtained with a multilayer reflective film of 5 periods, and the oscillation threshold can be reduced.
【００１２】上記実施例ではＩｎＰ基板に格子整合する
結晶系を用いた例を説明したが、ＡｌＧａＡｓ／ＧａＡ
ｓ系、ＡｌＩｎＧａＰ／ＧａＡｓ系等の他の結晶をも用
いることができる。In the above embodiment, an example using a crystal system that lattice-matches the InP substrate has been described. AlGaAs / GaA
Other crystals such as s series and AlInGaP / GaAs series can also be used.
【００１３】上記実施例ではエピタキシャル成長法にガ
スソースエピタキシャル成長法を用いたが、本発明はこ
れに限定されるものではない。In the above embodiment, the gas source epitaxial growth method was used as the epitaxial growth method, but the present invention is not limited to this.
【００１４】上記実施例では多層反射膜の低屈折率層に
空気層を用いたが、不活性ガス、ないし、真空等を用い
ても良い。In the above embodiment, the air layer is used as the low refractive index layer of the multilayer reflective film, but an inert gas or vacuum may be used.
【００１５】[0015]
【発明の効果】本発明による半導体レーザは、反射板を
構成する材料の屈折率の比を大きくできる構造を有する
ために、より少ない積層層厚で優れた反射率特性が得ら
れ、その結果、平坦かつ低閾値の面出射形半導体レーザ
を得ることができる。Since the semiconductor laser according to the present invention has a structure capable of increasing the refractive index ratio of the material forming the reflecting plate, excellent reflectance characteristics can be obtained with a smaller laminated layer thickness. It is possible to obtain a flat surface emitting semiconductor laser having a low threshold value.
【図１】本発明の半導体レーザの一実施例を説明するた
めの摸式図である。FIG. 1 is a schematic diagram for explaining an embodiment of a semiconductor laser of the present invention.
【図２】図１の半導体レーザの工程を示す図である。FIG. 2 is a diagram showing a process of the semiconductor laser of FIG.
１０ 基板 １１ ｎ形多層反射膜 １２ ダブルヘテロ構造 １３ ｐ形多層反射膜 １４ ｎ形電極 １５ ｐ形電極 １６ 空気層 １７ 活性層 ２０ ＳｉＯ2 マスク10 substrate 11 n-type multilayer reflection film 12 double heterostructure 13 p-type multilayer reflection film 14 n-type electrode 15 p-type electrode 16 air layer 17 active layer 20 SiO 2 mask
Claims (1)
が基板面と平行に積層された構造を有する面出射形半導
体レーザにおいて、前記反射鏡が出射光の波長より小さ
いバンドギャップ波長を有する半導体層と前記半導体層
で挟まれた空気または真空層との少なくとも１周期の繰
り返しからなる多層反射膜であることを特徴とする半導
体レーザ。1. A surface emitting semiconductor laser having a structure in which a light emitting layer and two reflecting mirrors sandwiching the light emitting layer are laminated in parallel with a substrate surface, wherein the reflecting mirror has a bandgap wavelength smaller than a wavelength of emitted light. A semiconductor laser, which is a multi-layered reflective film formed by repeating at least one cycle of a semiconductor layer and an air or vacuum layer sandwiched between the semiconductor layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15283392A JPH05327121A (en) | 1992-05-20 | 1992-05-20 | Surface emitting type semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15283392A JPH05327121A (en) | 1992-05-20 | 1992-05-20 | Surface emitting type semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05327121A true JPH05327121A (en) | 1993-12-10 |
Family
ID=15549132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15283392A Withdrawn JPH05327121A (en) | 1992-05-20 | 1992-05-20 | Surface emitting type semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05327121A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1027938A (en) * | 1996-07-10 | 1998-01-27 | Fuji Xerox Co Ltd | Normal radiation semiconductor laser device and method of fabricating the same |
| JPH1197796A (en) * | 1997-07-24 | 1999-04-09 | Samsung Electron Co Ltd | Iii-v compound surface emission laser and fabrication thereof |
| WO2008075692A1 (en) * | 2006-12-20 | 2008-06-26 | International Business Machines Corporation | Surface-emitting laser and method for manufacturing the same |
| US8380937B2 (en) | 2005-11-28 | 2013-02-19 | International Business Machines Corporation | System for preventing unauthorized acquisition of information and method thereof |
| JP2013045846A (en) * | 2011-08-23 | 2013-03-04 | Sharp Corp | Nitride semiconductor light-emitting element, nitride semiconductor light-emitting device and nitride semiconductor light-emitting element manufacturing method |
| JP2016002382A (en) * | 2014-06-18 | 2016-01-12 | キヤノン株式会社 | Imaging device |
-
1992
- 1992-05-20 JP JP15283392A patent/JPH05327121A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1027938A (en) * | 1996-07-10 | 1998-01-27 | Fuji Xerox Co Ltd | Normal radiation semiconductor laser device and method of fabricating the same |
| JPH1197796A (en) * | 1997-07-24 | 1999-04-09 | Samsung Electron Co Ltd | Iii-v compound surface emission laser and fabrication thereof |
| US8380937B2 (en) | 2005-11-28 | 2013-02-19 | International Business Machines Corporation | System for preventing unauthorized acquisition of information and method thereof |
| WO2008075692A1 (en) * | 2006-12-20 | 2008-06-26 | International Business Machines Corporation | Surface-emitting laser and method for manufacturing the same |
| US7923275B2 (en) | 2006-12-20 | 2011-04-12 | International Business Machines Corporation | Surface emitting laser and manufacturing method thereof |
| JP4870783B2 (en) * | 2006-12-20 | 2012-02-08 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Surface emitting laser and manufacturing method thereof |
| JP2013045846A (en) * | 2011-08-23 | 2013-03-04 | Sharp Corp | Nitride semiconductor light-emitting element, nitride semiconductor light-emitting device and nitride semiconductor light-emitting element manufacturing method |
| JP2016002382A (en) * | 2014-06-18 | 2016-01-12 | キヤノン株式会社 | Imaging device |
| US10188285B2 (en) | 2014-06-18 | 2019-01-29 | Canon Kabushiki Kaisha | Imaging apparatus |
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