JP3132445B2 - Long wavelength band surface emitting semiconductor laser and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-emitting type semiconductor laser which emits light in a long wavelength band used in optical communication, and more particularly to a vertical type having a structure in which an active layer and a cladding layer are sandwiched between a pair of light reflecting mirrors. The present invention relates to a cavity type long wavelength band surface emitting semiconductor laser and a method of manufacturing the same.

[0002]

2. Description of the Related Art A long-wavelength surface emitting type semiconductor laser of this kind is a light source having a low threshold value and easy to form a two-dimensional multi-channel, and is promising as a light source for a communication system using an optical fiber.

In this type of surface emitting semiconductor laser,
In order to obtain good characteristics such as a low threshold, a light reflecting mirror having an extremely high reflectance is indispensable. It is desirable that the light reflecting mirror has electric conductivity if possible. As the electric conductive reflecting mirror, a semiconductor layer film distributed Bragg reflecting mirror (DBR) in which two kinds of semiconductor layers having a difference in refractive index are alternately stacked.
Is used. In a long-wavelength surface emitting semiconductor laser having an InP-based active layer, there is no practical material combination capable of obtaining a sufficient difference in refractive index in a material system lattice-matched to InP, and therefore, a semiconductor having a high reflectivity. It is practically difficult to produce a multilayer reflector. For this reason, a GaAs / Al (Ga) As-based semiconductor multilayer film having a high reflectivity is used as a reflecting mirror as in a method for manufacturing a long-wavelength band surface emitting semiconductor laser described in, for example, JP-A-09-116223. And a method of directly bonding to an InP-based active layer.

FIG. 3 is a cross-sectional view showing the configuration of a long-wavelength band surface emitting semiconductor laser according to the manufacturing method of the above-mentioned document. Active layer 3
Reference numeral 3 denotes a multiple quantum well structure composed of InGaAsP and InGaAs, an n-type cladding layer 32 and a P-type cladding layer.
Is made of InP. These InP-based active layers 33
And the reflecting mirrors 30, 35 sandwiching the cladding layers 32, 34
GaAs n-type and p-type GaAs / Al (Ga) As
It is composed of a semiconductor multilayer film, and has an InP cladding layer and Ga
The two interfaces with the As / Al (Ga) As semiconductor multilayer mirror are formed by a direct bonding method using close contact and heating. 36 and 37 are p-type and n-type electrodes, respectively.
The AR coat film 38 is formed to suppress the laser light emitted from the back surface of the n-type GaAs substrate 29 from being reflected on the back surface.

[0005]

However, in the above-mentioned device, since the InP-based cladding layer and the active layer are used, there is a problem that characteristic deterioration such as an increase in threshold value and a decrease in efficiency tends to occur at a high temperature characteristic. is there. In the active layer having such a structure, the band discontinuity energies of the InP cladding layer and the conduction band of the quantum well active layer are relatively small.
It is considered that electrons serving as carriers easily overflow from the active layer, and the operating characteristics are particularly deteriorated at high temperatures. It is also known that an InP-based long-wavelength laser having an edge-emitting type semiconductor laser has much lower temperature characteristics than a GaAs-based short-wavelength laser having a large conduction band discontinuous energy. In conventional surface-emitting type semiconductor lasers as well, it has been reported that continuous oscillation at a high temperature of a long-wavelength laser is difficult compared to a short-wavelength GaAs laser, and there are few reported examples. Is considered to be one of the causes, and there is a possibility that the surface emitting semiconductor laser is particularly susceptible to the influence as compared with the edge emitting semiconductor laser.

In order to suppress the overflow of electrons from the quantum well active layer, it is considered effective to adopt a structure in which the conduction band energy of the quantum well layer and the cladding layer has a large discontinuous value. Can be However, when InP is used for the cladding layer, the conduction band discontinuous energy cannot be increased to a value considered to be sufficient to suppress the overflow of electrons.

An object of the present invention is to provide a long-wavelength surface-emitting type semiconductor laser which solves the above-mentioned problems and has good temperature characteristics and little deterioration even at high temperatures, and a method of manufacturing the same.

[0008]

The above object is achieved by the following means.

That is, the present invention relates to an active layer and a clad.
Vertical resonator with a structure in which layers are sandwiched by a set of light reflecting mirrors
Active layer and long-wavelength surface emitting semiconductor laser
The cladding layer is lattice-aligned to both InP and GaAs.
Long wavelength band surface characterized by non-matching semiconductor layers
The present invention proposes a light emitting semiconductor laser, wherein the light reflection
A semiconductor in which a mirror is formed by alternately stacking GaAs and AlAs
Multilayer reflector, dielectric multilayer mirror or cladding layer
Multilayer film composed of semiconductor layers that lattice-match with other materials
The cladding layer is In_x Ga_1-x P
(0 ≦ x ≦ 1), and the active layer is In_y1Ga
_1-y1As_y2P_1-y2(0 ≦ y1 ≦ 1, 0 ≦ y2 ≦ 1)
That the cladding layer is made of In._x1Al_x2Ga
_1-x1-x2 As (0 ≦ x1 ≦ 1, 0 ≦ x2 ≦ 1)
And the active layer is In_y1Ga_1-y As_y2P _1-y2(0 ≦ y
1 ≦ 1, 0 ≦ y2 ≦ 1).

The present invention also relates to a method of manufacturing a vertical cavity type long wavelength band surface emitting semiconductor laser having a structure in which an active layer and a cladding layer are sandwiched between a pair of light reflecting mirrors.
When bonding the GaAs thin film formed on the second wafer to the surface of the multilayer film reflecting mirror formed on the first wafer, the two wafers are bonded by giving a rotation angle of 1 to 45 ° to the crystal orientation of both wafers It is intended to propose a method for manufacturing a long-wavelength band surface emitting semiconductor laser, characterized by making the substrate of the first wafer a substrate having a crystal plane inclined,
The present invention proposes a method for manufacturing a long-wavelength band surface emitting semiconductor laser, characterized in that both wafers are adhered to each other using an inclined GaAs thin film on a second wafer. The current confinement structure is formed in a portion other than the element forming portion of the wafer, and the means for forming the current confinement structure is an ion implantation method, a method of oxidizing the AlAs layer near the active layer while leaving the central portion, or a method of forming the active layer. This includes any of the post-etching methods.

According to the first aspect of the present invention, as a material used for an active layer and a cladding layer that emit light in a long wavelength band, the condition of lattice matching with InP is relaxed, so that the degree of freedom in designing the active layer is reduced. Is expanding and the conventional InP
As compared with the case where the cladding layer and the InGaAsP active layer are used, the conduction band discontinuity between the cladding layer and the active layer can be increased. This allows
The confinement of the electrons serving as carriers is enhanced, the electrons can be prevented from overflowing out of the active layer even at a high temperature, and a long wavelength band surface emitting semiconductor laser with improved temperature characteristics can be manufactured.

[0012]

FIG. 1 shows a configuration of a long-wavelength band surface emitting semiconductor laser according to a first embodiment of the present invention.
It is sectional drawing. In FIG. 1, 1 is an n-type GaAs substrate,
2 is an n-type GaAs / Al laminated on the GaAs substrate 1
The (Ga) As multilayer mirror is provided with an ion implantation region 3 having a current confinement structure. The GaAs thin film layer 4 is made of Ga
It is directly bonded to the As / AlAs multilayer mirror 2.
The n-type cladding layer 5, the quantum well active layer 6, and the p-type cladding layer 7 are stacked on the GaAs thin film layer 4. 8 is
This is a p-type GaAs / AlAs multilayer mirror, and is directly bonded to the p-type cladding layer 7. 9 and 10 are p
Type electrode and n-type electrode. The AR coat film 11 is made of GaAs
It is formed to prevent reflection of the laser light emitted from the back surface of the s substrate 1 on the back surface of the substrate. In this structure, laser light is emitted from the back surface of the GaAs substrate 1.

Here, the n-type cladding layer 5, the p-type cladding layer 7, and the quantum well active layer 6, which emits light in the long wavelength band of 1.3 to 1.6 μm, are made of a material that does not lattice match with either InP or GaAs. Is formed. These semiconductor layers
It is assumed that it has a lattice constant intermediate between GaAs and InP. For example, the active layer 6 is made of InGaAs having a band gap of a desired emission wavelength between 1.3 and 1.6 μm.
It has a quantum well structure in which quantum well layers and InGaAsP barrier layers are alternately stacked, and the cladding layer is composed of these active layers 6.
InGaP having the same lattice constant as In such a structure, the conventional InP cladding layer and InGaAs
The conduction band discontinuous energy between the cladding layer and the quantum well layer can be increased as compared with the case where the sP active layer is used. For example, when the above structure is used in a surface emitting semiconductor laser emitting at a wavelength of 1.3 μm, the conduction band discontinuous energy can be increased from about 160 meV in the conventional structure to about 300 meV. Considering the deterioration of characteristics due to the overflow of electrons at a high temperature, it is considered that 300 meV or more is sufficient as the conduction band discontinuity energy.

FIGS. 2 and 3 are process sectional views illustrating a method for manufacturing the long wavelength band surface emitting semiconductor laser shown in FIG. The manufacturing method of FIG. 1 will be described below.

First, on an n-type GaAs substrate 12, an n-type G
A first wafer 15 on which an aAs / Al (Ga) As semiconductor multilayer mirror 13 has been grown is prepared. After crystal growth, the wafer 15 is masked at the element formation position by photolithography and ion-implanted to form a current confinement structure by the ion-implanted region 14 (FIG. 2).
(A)).

Next, on the second n-type GaAs substrate 16, A
A second wafer 19 is prepared by sequentially crystal-growing the lAs etching stop layer 17 and the n-type GaAs thin film layer 18 (FIG. 2B).

Next, the surface of the semiconductor multilayer film reflecting mirror 13 on the first wafer 15 and the surface of the GaAs thin film 18 on the second wafer 19 are brought into contact with each other after removing the surface oxide film, and oxidation is performed. To prevent this, the two wafers are bonded by heating in a hydrogen atmosphere. At this time, it is important that the crystal orientations of the two wafers are bonded at a rotation angle of 10 to 45 ° (FIG. 2C).

Next, the n-type G
aAs substrate 14 and AlAs etching stop layer 1
7 are sequentially removed (FIG. 2D).

Next, an n-type cladding layer 20, a quantum well active layer 21, and a p-type cladding layer 22 are sequentially grown on the remaining GaAs thin film 18 (FIG. 3 (e)).

Next, on a p-type GaAs substrate 23, a p-type G
Prepare a third wafer 25 on which the aAs / Al (Ga) As semiconductor multilayer mirror 24 has been crystal-grown (FIG. 3).
(F)). The surface of the p-type cladding layer 22 formed in the step of FIG.
The surface of the (Ga) As multilayer film reflecting mirror 24 is brought into contact with each other after removing the surface oxide film, and heated in a hydrogen atmosphere,
Adhere both directly. Then, the p-type GaAs substrate 23
Is removed by wet etching (FIG. 9G).

Next, a mask is applied by photolithography, and the p-type GaAs / Al (Ga) As multilayer film reflecting mirror 24 is etched into a post shape by RIBE. Further, a p-type electrode 26 is formed on the upper portion of the post, and an n-type electrode 27 is formed on the back surface of the GaAs substrate, leaving a laser emitting portion. Finally A
After forming the R coat film 28, the manufacturing process of the long wavelength band surface emitting semiconductor laser according to the present invention is completed (FIG. 3).
(H)).

As a method of crystal growth, molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOVPE)
The method such as the method is used.

In the step of FIG. 3E, it is necessary to grow crystals having different lattice constants on the GaAs thin film 18. Normally, it is impossible to grow a high-quality thick crystal having a different lattice constant from the substrate on the substrate.
It is known that when the s thin film 18 is used, crystals having different lattice constants can be grown to a certain thickness without multiplying dislocations.

Here, the thin film GaAs substrate 18 is a thin film having a thickness of 5 nm or less. When the thin film GaAs substrate 18 is bonded to the n-type GaAs / Al (Ga) As multilayer mirror 13 in the step of FIG. It is important that the substrate crystal orientation is bonded at an angle. This GaAs thin film 18 is made of n-type GaAs /
It has a mechanism of forming a dislocation net at the interface with the Al (Ga) As multilayer film reflecting mirror 13 and absorbing the growth of dislocations of the crystal grown thereon. For this reason, the lattice matching condition is greatly relaxed, and if the crystal has a lattice constant having a difference of about 5%, it is possible to grow on the crystal to a certain layer thickness more than the layer thickness required as the cladding layer of the semiconductor laser. It becomes possible. Instead of bonding the wafer at an angle to the substrate orientation in FIG. 3E, in the process of FIG.
The n-type GaAs substrate 16 on which the crystal growth of the aAs thin film 18 is used may be a substrate having an inclined crystal plane, and a substrate in which the surface of the GaAs thin film 18 is inclined may be used.

The structures of the active layer region and the cladding layer of the semiconductor laser applicable to the present invention are 1.3 to 1.6.
Emission in the long wavelength band, and the lattice constant of the active layer region is GaAs.
There is no particular limitation as long as the structure has an intermediate value between InP and InP, and it is possible to adopt a structure in which the conduction band discontinuity is large.

As the light reflecting mirror on the upper side of the substrate, Ga
The present invention is not limited to the As / Al (Ga) As multilayer film reflecting mirror, and it is possible to use a dielectric multilayer film reflecting mirror or a multilayer film reflecting mirror made of a semiconductor layer that is lattice-matched with the material of the cladding layer. is there. When a dielectric multilayer mirror is used, for example, SiO ₂ and TiO ₂ can be alternately formed for about 5 to 6 cycles by a method such as sputter deposition. In the case of using a semiconductor multilayer reflective film lattice-matched with the cladding layer material, a material having a refractive index difference as large as possible is selected, and the layer is formed by crystal growth successively on the cladding layer in the step of FIG. be able to.

The current confinement structure is not limited to the ion implantation method, but may be a method of oxidizing the AlAs layer near the active layer while leaving the center portion, a structure of confining the active layer by etching it into a post shape, and the like. Can be used.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment)
This will be described with reference to a cross-sectional view of a manufacturing process of the surface-emitting type semiconductor laser shown in FIG.

First, a molecular beam epitaxy method (MBE)
Method), on the n-type GaAs substrate 12, an optical wavelength of 1
Approximately 20 pairs of n-type GaAs layers and n-type AlAs layers having a thickness of are alternately stacked to form an n-type semiconductor multilayer film reflecting mirror 13. A resist having a thickness of about several μm is applied to the wafer by photolithography, hydrogen ions are implanted into portions other than the element formation portion, and then the resist is removed to form a current confinement structure. 14 in FIG. 2A becomes a hydrogen ion implantation region (FIG. 2A).

Next, on the second n-type GaAs substrate 16, A
lAs etching stop layer 17, G having a thickness of about 5 nm
The aAs thin films 18 are sequentially laminated by the MBE method to form a second wafer 19 (FIG. 2B).

Next, the n-type GaAs /
After removing the surface oxide film, the surface of the AlAs semiconductor multilayer film reflecting mirror 13 and the surface of the GaAs thin film 18 of the second wafer 19 are adhered to each other, and heated at 550 ° C. in a hydrogen atmosphere to prevent oxidation. Adhere directly. At this time, it is important to bond the crystal orientation of the first wafer 15 and the second wafer 19 at an angle of 10 to 45 ° (FIG. 2C).

Thereafter, the second wafer 19 is etched by a mixed solution of aqueous ammonia and aqueous hydrogen peroxide.
The n-type GHaAs substrate 16 is removed. At this time, the etching stops before the AlAs etching stop layer 17. Further, when the AlAs etching stop layer 17 is removed with a hydrofluoric acid aqueous solution, the etching is performed by the GaAs thin film 1.
8 and the GaAs thin film 18 directly bonded to the first wafer 15 remains (FIG. 2D).

Next, an n-type InGaP (band gap wavelength 0.8 nm) is formed on the GaAs thin film 18 by MBE.
μm) a cladding layer 20, a quantum well active layer 21 in which an InGaAsP (band gap wavelength 1.15 μm) barrier layer and an InGaAs (band gap wavelength 1.3 μm) quantum well layer are alternately laminated for seven periods, and p-type InG
An aP (band gap wavelength: 0.8 μm) cladding layer is sequentially laminated. Here, each of the semiconductor layers forming the n-type cladding layer, the p-type cladding layer, and the quantum well active layer is GaAs.
And about 2.8% different from each other.
Since these semiconductor layers have different lattice constants from GaAs,
Normally, high-quality thick-film crystals cannot be formed on GaAs, but here, the GaAs thin film 18 is a thin film of about 3 nm, and n-type GaAs on the n-type GaAs substrate 12 is used.
/ AlAs is bonded to the semiconductor multilayer film reflecting mirror 13 at an angle to the crystal orientation to form a dislocation net at the interface, and has a mechanism for absorbing the growth of dislocations in the crystal grown on the GaAs thin film layer. Therefore, the lattice matching condition is greatly relaxed, and a crystal having a different lattice constant can be grown thereon as a clad layer with a required thickness.

Next, an upper semiconductor multilayer mirror is formed. First, on a third p-type GaAs substrate 23, about 20 pairs of p-type GaAs layers and p-type AlAs layers each having a thickness of 1/4 of the optical wavelength are alternately laminated to form a p-type GaAs / AlAs semiconductor multilayer film. The reflection mirror 24 is formed. Next, after removing the surface oxide film from the surface of the p-type InGaP cladding layer 22 and the surface of the p-type GaAs / AlAs semiconductor multilayer film reflector 24 of the third wafer, which are laminated in the step of FIG. ,
It is adhered and heated at 550 ° C. in a hydrogen atmosphere to directly adhere. Then, the p-type GaAs substrate 23 is removed by etching with a mixed solution of aqueous ammonia and aqueous hydrogen peroxide. At this time, the etching is stopped before the uppermost AlAs layer constituting the p-type GaAs / AlAs semiconductor multilayer mirror 24 (FIG. 3F).

Next, a mask is formed by photolithography, and p-type GaAs / AlA
The s-semiconductor multilayer mirror 24 is etched by RIBE to form a post shape, and a p-type electrode 26 is formed on the post using photolithography and vacuum deposition.
Next, the back surface of the n-type GaAs substrate 12 is polished to a thickness of about 100 μm, and an n-type electrode 27 is formed on the back surface using photolithography and vacuum deposition, leaving a laser beam emitting portion. Finally, an AR coat film 28 is formed on the laser light emitting portion on the back surface of the GaAs substrate, and the manufacture of the surface emitting semiconductor laser of this embodiment is completed.

In the 1.3 μm band surface emitting semiconductor laser of this embodiment, the quantum well active layer 21 is made of InGaAs.
P (bandgap wavelength 1.15 μm) barrier layer and In
GaAs (band gap wavelength: 1.3 μm) quantum well layers are alternately laminated for seven periods, and the n-type and p-type cladding layers 20 and 22 are formed of InGaP (band gap wavelength: 0.8 μm). These semiconductor layers have a lattice constant about 2.8% larger than that of the GaAs substrate. In this structure, the conduction band discontinuity between the cladding layer and the quantum well layer is larger than that in the case of using the conventional InP cladding layer and the InGaAs active layer.
From about 300 meV. Considering the deterioration of characteristics due to electron overflow at high temperature,
It is considered that 300 meV or more is sufficient as the conduction band discontinuity energy. In the surface emitting semiconductor laser of this embodiment, improvement in temperature characteristics can be expected.

In this embodiment, the quantum well active layer 21
Uses a material lattice-matched with the InGaP cladding layers 20 and 22, but in order to further improve the temperature characteristics,
It is also effective to use a strained quantum well active layer having a different lattice constant from the InGaP cladding layer.

(Second Embodiment) Next, a second embodiment of the present invention will be described with reference to the structural drawing of the surface emitting semiconductor laser shown in FIG. The manufacturing method can be performed in exactly the same manner as in the first embodiment, except for the structure of the cladding layer and the active layer region formed in the step of FIG.

In the surface emitting semiconductor laser of the 1.3 μm band of this embodiment, the quantum well active layer 21 is made of InGaAs.
P (bandgap wavelength 1.15 μm) barrier layer and In
The n-type and p-type cladding layers 20 and 22 are formed of InAlAs (band gap wavelength 0.77 μm), in which GaAs (band gap wavelength 1.3 μm) quantum well layers are alternately stacked for seven periods. The lattice constant of the InAlAs cladding layers 20 and 22 is about 2.2% larger than that of the GaAs substrate. In the InGaAs quantum well layer, in this structure, the conduction band discontinuous energy between the cladding layer and the quantum well layer is about 330 meV, and the temperature characteristic of the surface emitting semiconductor laser of this embodiment is lower. Can be expected.

[0040]

As described above in detail with reference to the embodiments, a vertical cavity type long-wavelength surface emitting semiconductor laser having a structure in which an active layer and a cladding layer are sandwiched between a pair of light reflecting mirrors is described. The active layer is formed of a semiconductor layer that does not lattice match with either InP or GaAs.
By increasing the conduction band discontinuous energy between the cladding layer and the quantum well active layer, compared to the case of using an active layer consisting of a semiconductor layer lattice-matched to However, it is possible to realize a long-wavelength surface-emitting semiconductor laser with little deterioration in characteristics.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a structure according to a first embodiment of the present invention.

FIG. 2 is a sectional structural view showing a first half of a manufacturing process of the first embodiment of the present invention.

FIG. 3 is a sectional structural view showing a latter half of the manufacturing process of the first embodiment of the present invention.

FIG. 4 is a cross-sectional view showing an example of the structure of a conventional long wavelength band surface emitting semiconductor laser.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 n-type GaAs substrate 2 n-type GaAs / Al (Ga) As multilayer reflector 3 ion-implanted region 4 GaAs thin film 5 n-type cladding layer 6 quantum well active layer 7 p-type cladding layer 8 p-type GaAs / Al (Ga) As multilayer reflector 9 p-type electrode 10 n-type electrode 11 AR coating film 12 n-type GaAs substrate 13 n-type GaAs / AlAs multilayer reflector 14 ion implantation region 15 first wafer 16 n-type GaAs substrate 17 AlAs etching stop Layer 18 n-type GaAs thin film 19 second wafer 20 n-type InGaP cladding layer 21 quantum well active layer 22 p-type InGaP cladding layer 23 p-type GaAs substrate 24 p-type GaAs / AlAs multilayer film reflector 25 third wafer 26 p Type electrode 27 n-type electrode 28 AR coat film 29 n-type GaAs substrate 30 n-type GaAs AlAd multilayer reflector 31 ion-implanted region 32 n-type InP cladding layer 33 InGaAsP / InGaAs quantum well active layer 34 p-type Inp cladding layer 35 p-type GaAs / AlAs multilayer reflector 36 p-type electrode 37 n-type electrode 38 AR coating film

────────────────────────────────────────────────── ─── Continued on the front page (58) Fields surveyed (Int. Cl. ⁷ , DB name) H01S 5/00-5/50 JICST file (JOIS)

Claims (8)

(57) [Claims] 1. A vertical-cavity long-wavelength surface-emitting semiconductor laser having a structure in which an active layer region and a pair of n-type and p-type cladding layers are sandwiched between a pair of light reflecting mirrors. The lattice constant of the layer region and the pair of cladding layers is selected between the lattice constants of GaAs and InP;
In the active layer region, the semiconductor layer that emits laser light has a band gap wavelength of at least 1.3 μm in a long wavelength band. And correspondingly,
As the semiconductor material forming the cladding layer, a material having a conduction band discontinuous energy of 300 meV or more with the semiconductor layer that causes laser emission in the active layer region is selected, and one of the pair of cladding layers is selected. The vertical resonator is formed between the semiconductor thin film and the light reflecting mirror facing the semiconductor thin film, and the semiconductor material of the semiconductor thin film has a lattice constant and a lattice constant of the one cladding layer. A dislocation net is formed at the interface with the light reflecting mirror in contact with the semiconductor thin film, and the thickness of the semiconductor thin film is selected to be 5 nm or less. A long-wavelength surface-emitting type semiconductor laser characterized in that: 2. A multilayer film comprising a semiconductor multilayer mirror, a dielectric multilayer mirror, or a semiconductor layer lattice-matched to a material of a cladding layer, wherein the light reflecting mirror is formed by alternately stacking GaAs and AlAs. 2. The long-wavelength surface-emitting semiconductor laser according to claim 1, wherein the semiconductor laser includes a reflecting mirror. 3. The method according to claim 1, wherein the cladding layer is formed of In _x Ga _{1 -x} P (0 ≦
x ≦ 1), and the active layer region is In _y1 Ga _{1-y1
As y2 P 1-y2 (0} ≦ y1 ≦ 1,0 ≦ y2 ≦ 1) long wavelength surface emitting semiconductor laser according to claim 1 or 2, characterized in that it is composed of. 4. The method according to claim 1, wherein the cladding layer is made of In _x1 Al _x2 Ga.
_1-x1-x2 As (0 ≦ x1 ≦ 1, 0 ≦ x2 ≦ 1), and the active layer region is In _y1 Ga _{1-y1 Asy2} P _{1- y2} (0
≤ y1 ≤ 1, 0 ≤ y2 ≤ 1). 5. A method of manufacturing a vertical cavity type long wavelength surface emitting semiconductor laser having a structure in which an active layer and a cladding layer are sandwiched between a pair of light reflecting mirrors, wherein the multilayer formed on the first wafer is provided. A long-wavelength surface, wherein when bonding the GaAs thin film formed on the second wafer to the surface of the film reflecting mirror, the two wafers are bonded with a rotation angle of 1 to 45 ° to the crystal orientation of both wafers. A method for manufacturing a light emitting semiconductor laser. 6. The method according to claim 1, wherein the substrate of the first wafer is a substrate having an inclined crystal plane, and the two wafers are bonded using an inclined surface of a GaAs thin film on the second wafer. A method for manufacturing a long wavelength surface emitting semiconductor laser according to claim 5. 7. The method for manufacturing a long-wavelength surface-emitting semiconductor laser according to claim 5, wherein a current confinement structure is formed in a portion other than the element formation portion of the first wafer. 8. A means for forming the current confinement structure,
8. The method according to claim 7, wherein the method is one of an ion implantation method, a method of oxidizing the AlAs layer near the active layer while leaving the center portion, and a method of etching the active layer into a post shape.
3. The method for producing a long-wavelength surface-emitting semiconductor laser according to item 1.