JPS62285486A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS62285486A JPS62285486A JP12812686A JP12812686A JPS62285486A JP S62285486 A JPS62285486 A JP S62285486A JP 12812686 A JP12812686 A JP 12812686A JP 12812686 A JP12812686 A JP 12812686A JP S62285486 A JPS62285486 A JP S62285486A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- type
- laser
- dielectric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 238000005253 cladding Methods 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 229910052745 lead Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 8
- 230000010355 oscillation Effects 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 6
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 2
- 101100499944 Arabidopsis thaliana POL2A gene Proteins 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/163—Single longitudinal mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0208—Semi-insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
（産業上の利用分野）
面発光半導体レーザは、基板に対して垂直方向にレーザ
光を放射し得るレーザであり、種々の用途に応用が期待
されると共Ｋ、画像処理用の入出力用平面型デバイスと
しても注目をあびている。[Detailed Description of the Invention] 3. Detailed Description of the Invention (Field of Industrial Application) A surface-emitting semiconductor laser is a laser that can emit laser light in a direction perpendicular to a substrate, and can be applied to various uses. In addition to expectations, it is also attracting attention as a flat input/output device for image processing.
本発明は、このような面発光半導体レーザに関するもの
である。The present invention relates to such a surface emitting semiconductor laser.
（従来の技術）
第２図は従来の面発光レーザの構造の一例を示す図であ
る。(Prior Art) FIG. 2 is a diagram showing an example of the structure of a conventional surface emitting laser.
１１はｎ型Ｇ ａ Ａ ｓ基板、１２はｎ型ＧａＡｓバ
ッファ層、 １３はｎ型ＡＮ、、、Ｇａ、、、Ａｓクラ
ッド層、１４はＧａＡｓ光活性層、１５はｐ型Ａｉ！。11 is an n-type GaAs substrate, 12 is an n-type GaAs buffer layer, 13 is an n-type AN,..., Ga,..., As cladding layer, 14 is a GaAs photoactive layer, and 15 is a p-type Ai! .
、３Ｇ８６．７ＡＳクラッド層、１６はｐ型ｐ、 １．
、ｔｓ Ｇａ０．、ｓＡｓキャップ層、１７はＳｉｏ
、電流ブロック層、１８はＡｕ／Ｚｎ／Ａｕｆｆ１−極
、１９はＡｕ／Ｓｎ電極である。, 3G86.7AS cladding layer, 16 is p-type p, 1.
, ts Ga0. , sAs cap layer, 17 is Sio
, a current blocking layer, 18 an Au/Zn/Auff1-electrode, and 19 an Au/Sn electrode.
また、２０は光を取出すためにエツチングにより形成さ
れた凹部であり、光共振器は両金属電極１８゜１９によ
り形成されている。Further, 20 is a recess formed by etching to extract light, and an optical resonator is formed by both metal electrodes 18 and 19.
この構成により面発光のレーザ発振を得る事ができるが
、基本的に単共振構造であるので、スペクトル線幅を狭
くすることには限界があり、また、ＧａＡｓ基板が発振
波長に対して光吸収性であるので、エツチングで裏面よ
り基板の一部を除去しなければならず、この時の位置合
わせが困難であるのみならず、アレイ状に集積するとき
の集積密度の限界を与えていた。This configuration makes it possible to obtain surface-emitting laser oscillation, but since it is basically a single-resonance structure, there is a limit to narrowing the spectral line width, and the GaAs substrate absorbs light at the oscillation wavelength. Since the substrate is thin, a part of the substrate must be removed from the back surface by etching, which not only makes alignment difficult, but also limits the integration density when stacking in an array.
（発明が解決しようとする問題点） 本発明は１以上に示した様な問題点を克服し。(Problem to be solved by the invention) The present invention overcomes one or more of the problems set forth above.
基板のエツチングが不要で、かつ、狭スペクトル発振の
可能な、面発光レーザを提供するものである。The present invention provides a surface emitting laser that does not require etching of a substrate and is capable of narrow spectrum oscillation.
（問題点を解決するための手段）
以上の問題点を解決するために１本発明は、誘電体基板
上Ｋ、ＧａｘＡａｖＩｎ！ＡｓｖＰｗ系の半導体材料を
用いて、第１導電型の光クラッド層、光活性層、第２導
電型の光クラッド層を含む多層膜がエピタキシャル成長
されており、レーザの主共振器面が、半導体層の表面と
前記誘電体基板の半導体層の形成されていない面で形成
されていることを特徴とする外部共振器型面発光半導体
レーザである。(Means for Solving the Problems) In order to solve the above problems, the present invention provides K, GaxAavIn! A multilayer film including an optical cladding layer of a first conductivity type, a photoactive layer, and an optical cladding layer of a second conductivity type is epitaxially grown using an AsvPw-based semiconductor material, and the main cavity surface of the laser is formed on the semiconductor layer. This is an external cavity type surface emitting semiconductor laser, characterized in that it is formed of a surface of the dielectric substrate and a surface of the dielectric substrate on which a semiconductor layer is not formed.
（作用）
本発明は、発振波長に対して透明な誘電体基板上Ｋ、面
発光半導体レーザを形成することにより。(Function) The present invention is achieved by forming a surface-emitting semiconductor laser on a dielectric substrate that is transparent to the oscillation wavelength.
誘電体基板が外部共振器として働き、その結果、基板の
エツチングが不要で、かつ、狭スペクトル発振の可能な
、面発光レーザを提供するものである。The dielectric substrate functions as an external resonator, and as a result, it is possible to provide a surface emitting laser that does not require etching of the substrate and is capable of narrow spectrum oscillation.
（実施例）
笛１図は本発明の外部共振器型面発光レーザの一実施例
の概略構造図である。(Embodiment) Figure 1 is a schematic structural diagram of an embodiment of an external cavity surface emitting laser of the present invention.
１は両面が鏡面研磨されたＢａＴｉ○、の結晶基板より
成る誘電基板であり、この誘電基板１上に。Reference numeral 1 denotes a dielectric substrate made of a BaTi◯ crystal substrate with mirror-polished surfaces on both sides.
ＭＯＣＶＤ法によりｎ型ＡＪ、 、、 Ｇａ、 、、
Ａｓクラッド層２、ＧａＡｓ光活性層３、ｐ型Ａ１゜、
、 Ｇａｏ、、 Ａｓクラッド層４、ｐ型Ａ １６ 、
□ｓ Ｇ ａｏ 、ｓ ｓ Ａ Ｓキャップ層５が形成
されている。n-type AJ, , , Ga, , by MOCVD method
As cladding layer 2, GaAs photoactive layer 3, p-type A1°,
, Gao, As cladding layer 4, p-type A 16 ,
□s G ao , s s A S cap layer 5 is formed.
また、真空蒸着法によりＳｉｏ、電流ブロック層６、Ａ
ｕ／Ｚｎ／Ａｕ電極７、Ａｕ／Ｓｎ電極８が形成されて
いる。In addition, Sio, current blocking layer 6, A
A u/Zn/Au electrode 7 and an Au/Sn electrode 8 are formed.
レーザの主共振面は、誘電基板１の半導体層の形成され
ていない面１０と、キャップ層５の表面９である。The main resonant planes of the laser are the surface 10 of the dielectric substrate 1 on which the semiconductor layer is not formed and the surface 9 of the cap layer 5.
電極７，８間に順方向電流を注入することにより、単−
縦モードの面発光のレーザ共振を得ることができた。By injecting a forward current between electrodes 7 and 8, a single
We were able to obtain longitudinal mode surface-emitting laser resonance.
また、本面発光レーザのスペクトル線幅はＩＭｔｌｚ以
下であり、コヒーレント通信にも充分実用可能な特性を
得ることができた。Furthermore, the spectral linewidth of the main surface emitting laser was less than IMtlz, and it was possible to obtain characteristics that are sufficiently practical for coherent communication.
この外部共振レーザにおいて、狭いスペクトル線幅が得
られたのは、外部共振器長の基板の厚さ約ｌｌｌ１ｆｆ
ｉに対し、内部共振器長が約５μｍ（半導体層の厚さ）
と非常に短く（約１ ／２００） 、即ち、外部共振器
長と内部共振器長の比を非常に大きく取ることができた
ためである。In this external resonant laser, a narrow spectral linewidth was obtained because the thickness of the substrate of the external resonator length was approximately lll1ff.
For i, the internal cavity length is approximately 5 μm (thickness of the semiconductor layer)
This is because it is extremely short (approximately 1/200), that is, the ratio of the external resonator length to the internal resonator length can be made extremely large.
本発明では、半導体層としてＧａＡ＃Ａｓ／ＧａＡｓ系
を用いたが、ＧａＡ１！ＩｎＡｓＰ系の半導体で、基板
に格子整合する組成であれば良い。In the present invention, a GaA#As/GaAs system was used as the semiconductor layer, but GaA1! Any InAsP-based semiconductor with a composition lattice-matched to the substrate may be used.
また、結晶成長方法も、実施例では、Ｎ０ＣＶＤ法を用
いているが、必ずしもこれに限定されるものではない。Furthermore, although the N0CVD method is used in the embodiment as a crystal growth method, it is not necessarily limited to this.
誘電体基板としては、ＡＢＯ４型（ただし、ＡはＰｂ、
Ｃｄ、Ｃａ、Ｓｒ、Ｂａの群より選択された一つ。The dielectric substrate is ABO4 type (A is Pb,
One selected from the group of Cd, Ca, Sr, and Ba.
ＢはＭ ｏ 、 Ｗより選択された一つ）または、ＡＢ
○。B is one selected from M o and W) or AB
○.
ペロブスカイト型（ただし、ＡはＫ、Ｂａ、Ｓｒ＋Ｐｂ
＋Ｌｉの群より選択された一つ、ＢはＴｉ、Ｔａ、 Ｚ
ｒ。Perovskite type (A is K, Ba, Sr+Pb
+One selected from the group of Li, B is Ti, Ta, Z
r.
Ｆ ｅ、 Ｓ ｎ、 Ｃｅ、 Ｎｂの群より選択された
一つ）であれば■−■族の半導体の結晶成長が可能であ
り、用いることができる。(one selected from the group of Fe, Sn, Ce, and Nb) allows crystal growth of ■-■ group semiconductors and can be used.
（発明の効果）
以上説明したようＫ、本発明によれば、基板のエツチン
グの不要で製造の容易な面発光レーザが実現されると同
時Ｋ、スペクトル線幅も著しく狭く、コヒーレント光源
としても利用可能である。(Effects of the Invention) As explained above, according to the present invention, a surface-emitting laser that does not require etching of the substrate and is easy to manufacture is realized. It is possible.
第１図は本発明の外部共振器型面発光レーザの一実施例
の概略構造図、第２図は従来の面発光レーザの構造の一
例を示す図である。
１ ・・・誘電基板、
２ ・・・ ｎ型Ａ Ｉ Ｇ ａ Ａ ｓクララド層、
３ ・・・Ｇ ａ Ａ ｓ光活性層、
４ ・・・ ｐ型ＡＪＧａＡｓクラッド層。
５ ・・・ ｐ型ＡＪＧａＡｓキャップ層、６・・・Ｓ
ｉｏ、電流ブロック層、
７．８ ・・・電極、９．１０・・・主共振面。
特許出願人 松下電器産業株式会社
第１図
９．１０・・′Ｌ民諌面
乙・・・凹鮮FIG. 1 is a schematic structural diagram of an embodiment of an external cavity surface emitting laser according to the present invention, and FIG. 2 is a diagram showing an example of the structure of a conventional surface emitting laser. 1... Dielectric substrate, 2... N-type AIGaAs Clarad layer,
3...GaAs photoactive layer, 4...p-type AJGaAs cladding layer. 5... p-type AJGaAs cap layer, 6...S
io, current blocking layer, 7.8...electrode, 9.10...main resonance surface. Patent Applicant: Matsushita Electric Industrial Co., Ltd. Figure 1 9.10...'L Minyakumen Otsu...Concave
Claims (3)
＿ＶＰ＿Ｗ系の半導体材料を用いて、第１導電型の光ク
ラッド層、光活性層、第２導電型の光クラッド層を含む
多層膜がエピタキシャル成長されており、レーザの主共
振面が、半導体層の表面と前記誘電体基板の半導体層の
形成されていない面で形成されていることを特徴とする
半導体レーザ。(1) Ga_XAl_YIn_ZAs on the dielectric substrate
A multilayer film including an optical cladding layer of a first conductivity type, a photoactive layer, and an optical cladding layer of a second conductivity type is epitaxially grown using a _VP_W-based semiconductor material, and the main resonant plane of the laser is aligned with the semiconductor layer. 1. A semiconductor laser comprising a front surface and a surface of the dielectric substrate on which a semiconductor layer is not formed.
、Ｃａ、Ｓｒ、Ｂａの群より選択された一つ、ＢはＭｏ
、Ｗの群より選択された一つ）であることを特徴とする
特許請求の範囲第（１）項記載の半導体レーザ。(2) Dielectric material is ABO_4 type (A is Pb, Cd
, Ca, Sr, Ba, B is Mo
, W. , W).
ＡはＫ、Ｂａ、Ｓｒ、Ｐｂ、Ｌｉの群より選択された一
つ、ＢはＴｉ、Ｔａ、Ｚｒ、Ｆｅ、Ｓｎ、Ｃｅ、Ｎｂの
群より選択された一つ）であることを特徴とする特許請
求の範囲第（１）項記載の半導体レーザ。(3) Dielectric material is ABO_3 perovskite type (however,
A is one selected from the group of K, Ba, Sr, Pb, and Li, and B is one selected from the group of Ti, Ta, Zr, Fe, Sn, Ce, and Nb). A semiconductor laser according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12812686A JPS62285486A (en) | 1986-06-04 | 1986-06-04 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12812686A JPS62285486A (en) | 1986-06-04 | 1986-06-04 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62285486A true JPS62285486A (en) | 1987-12-11 |
Family
ID=14977036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12812686A Pending JPS62285486A (en) | 1986-06-04 | 1986-06-04 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62285486A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0575207A (en) * | 1991-09-13 | 1993-03-26 | Nippon Telegr & Teleph Corp <Ntt> | Resonator type semiconductor luminous device and manufacture thereof |
| FR2793960A1 (en) * | 1999-05-05 | 2000-11-24 | Mitel Semiconductor Ab | SURFACE EMISSION LASER WITH VERTICAL CAVITY AND OUTPUT MONITORING DEVICE IN COMBINATION AND ITS MANUFACTURING PROCESS |
| JP2005026465A (en) * | 2003-07-02 | 2005-01-27 | Sharp Corp | Oxide semiconductor light emitting element |
-
1986
- 1986-06-04 JP JP12812686A patent/JPS62285486A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0575207A (en) * | 1991-09-13 | 1993-03-26 | Nippon Telegr & Teleph Corp <Ntt> | Resonator type semiconductor luminous device and manufacture thereof |
| FR2793960A1 (en) * | 1999-05-05 | 2000-11-24 | Mitel Semiconductor Ab | SURFACE EMISSION LASER WITH VERTICAL CAVITY AND OUTPUT MONITORING DEVICE IN COMBINATION AND ITS MANUFACTURING PROCESS |
| JP2005026465A (en) * | 2003-07-02 | 2005-01-27 | Sharp Corp | Oxide semiconductor light emitting element |
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