JPS61108187A - Semiconductor photoelectronic device - Google Patents

Semiconductor photoelectronic device

Info

Publication number
JPS61108187A
JPS61108187A JP23094784A JP23094784A JPS61108187A JP S61108187 A JPS61108187 A JP S61108187A JP 23094784 A JP23094784 A JP 23094784A JP 23094784 A JP23094784 A JP 23094784A JP S61108187 A JPS61108187 A JP S61108187A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
element
layer
type
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23094784A
Inventor
Hideaki Iwano
Hiroshi Komatsu
Hiroyuki Oshima
Yoshifumi Tsunekawa
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output

Abstract

PURPOSE:To integrate a light-emitting element, a light-receiving element and an electronic element on a single substrate and to obtain an photoelectronic device with high utility, by selectively utilizing the upper or lower face of the Si single-crystal substrate and by superposing thereon an amorphous insulation film, a thin film of a compound semiconductor and multilayer thin film of said compound semiconductor. CONSTITUTION:An SiO2 film 2 on an N type Si substrate 1 is provided, on the surface thereof, with rectangular stripe grooves with a depth of 10-10<5>Angstrom and a width of 0.1-10mum by means of etching. Amorphous or polycrystalline N type GaAs 3 is then deposited thereon by the vapor growth, and is heated so that it is rearranged along the grooves and that single crystal is caused to grow. Subsequently, an N type AlGaAs layer 4, an AlGaAS active layer 5, a P type AlGaAs layer 6 and a P type GaAs layer 8 are epitaxially deposited to form a laser diode. An N<+> layer 10 is provided in the P<+> layer 9 of the substrate 1 to form an NPN transistor. These are provided with protective films 11 and 12, electrodes 8, 13 and 14 and wiring 15, respectively. According to this construction, the intensity of laser beams can be controlled with the base current in the transistor. Further, it is also possible to integrate a laser element, a light-receiving element and a driving element on one face while integrating a driving element and a signal processing arithmatical element on the opposite face.
JP23094784A 1984-11-01 1984-11-01 Semiconductor photoelectronic device Pending JPS61108187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23094784A JPS61108187A (en) 1984-11-01 1984-11-01 Semiconductor photoelectronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23094784A JPS61108187A (en) 1984-11-01 1984-11-01 Semiconductor photoelectronic device

Publications (1)

Publication Number Publication Date
JPS61108187A true true JPS61108187A (en) 1986-05-26

Family

ID=16915802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23094784A Pending JPS61108187A (en) 1984-11-01 1984-11-01 Semiconductor photoelectronic device

Country Status (1)

Country Link
JP (1) JPS61108187A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6334994A (en) * 1986-07-29 1988-02-15 Mitsubishi Electric Corp Photoelectric integrated circuit device and manufacture thereof
JPS63142861A (en) * 1986-12-05 1988-06-15 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
WO2001059835A1 (en) * 2000-02-10 2001-08-16 Motorola, Inc. Semiconductor devices
WO2002031872A1 (en) * 2000-10-12 2002-04-18 Motorola, Inc. Semiconductor amorphous layer formed with energy beam
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
WO2002033385A3 (en) * 2000-10-19 2002-08-29 Motorola Inc Biochip excitation and analysis structure
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
WO2002071458A3 (en) * 2001-02-28 2003-02-13 Motorola Inc Growth of compound semiconductor structures on patterned oxide films
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6334994A (en) * 1986-07-29 1988-02-15 Mitsubishi Electric Corp Photoelectric integrated circuit device and manufacture thereof
JPS63142861A (en) * 1986-12-05 1988-06-15 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
WO2001059835A1 (en) * 2000-02-10 2001-08-16 Motorola, Inc. Semiconductor devices
WO2001059821A1 (en) * 2000-02-10 2001-08-16 Motorola Inc. A process for forming a semiconductor structure
WO2001059837A1 (en) * 2000-02-10 2001-08-16 Motorola Inc. Integrated circuit
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
WO2002031872A1 (en) * 2000-10-12 2002-04-18 Motorola, Inc. Semiconductor amorphous layer formed with energy beam
WO2002033385A3 (en) * 2000-10-19 2002-08-29 Motorola Inc Biochip excitation and analysis structure
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
WO2002071458A3 (en) * 2001-02-28 2003-02-13 Motorola Inc Growth of compound semiconductor structures on patterned oxide films

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