JPS6472577A - Optical semiconductor element - Google Patents

Optical semiconductor element

Info

Publication number
JPS6472577A
JPS6472577A JP22933387A JP22933387A JPS6472577A JP S6472577 A JPS6472577 A JP S6472577A JP 22933387 A JP22933387 A JP 22933387A JP 22933387 A JP22933387 A JP 22933387A JP S6472577 A JPS6472577 A JP S6472577A
Authority
JP
Japan
Prior art keywords
film
electrode
type
type inp
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22933387A
Other languages
Japanese (ja)
Inventor
Teruhito Matsui
Kunio Ookawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP22933387A priority Critical patent/JPS6472577A/en
Publication of JPS6472577A publication Critical patent/JPS6472577A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain an optical semiconductor element simple in structure and easy to manufacture by providing a superconductor film between the electrode of a semiconductor element for light emission and an external conductor, and introducing a signal light to the film to control the quantity of light emitted by the element. CONSTITUTION:A superconductor film 20 is provided between the electrode 18 of a light emitting semiconductor element and an external lead, a signal light is introduced to the film 20 to control the quantity of the emitting light of the element. For example, after a P-type InP buffer layer 12, an InGaAsP active layer 13 and an N-type InP layer 14 are crystalline grown on a P-type InP substrate 11, a stripelike reverse mesa structure is formed by etching. Then, the side face is buried with an N-type InP block layer 15 and a P-type InP layer 16 by twice crystal growths, thereby manufacturing a semiconductor laser. Thereafter, an insulating film 17 is formed on the top, the film 17 of the part of the N-type side of the laser is removed, and an N-type electrode 18 is formed. Further, the part of the electrode 18 is removed, and the superconductor film 20 is adhered. Further, a P-type electrode 19 is formed on the lower part of the laser.
JP22933387A 1987-09-11 1987-09-11 Optical semiconductor element Pending JPS6472577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22933387A JPS6472577A (en) 1987-09-11 1987-09-11 Optical semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22933387A JPS6472577A (en) 1987-09-11 1987-09-11 Optical semiconductor element

Publications (1)

Publication Number Publication Date
JPS6472577A true JPS6472577A (en) 1989-03-17

Family

ID=16890512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22933387A Pending JPS6472577A (en) 1987-09-11 1987-09-11 Optical semiconductor element

Country Status (1)

Country Link
JP (1) JPS6472577A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6077613B1 (en) * 2015-09-02 2017-02-08 日本電信電話株式会社 Optical trigger pulse generator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6077613B1 (en) * 2015-09-02 2017-02-08 日本電信電話株式会社 Optical trigger pulse generator

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