JPS568890A - Semiconductor laser and manufacture thereof - Google Patents

Semiconductor laser and manufacture thereof

Info

Publication number
JPS568890A
JPS568890A JP8116279A JP8116279A JPS568890A JP S568890 A JPS568890 A JP S568890A JP 8116279 A JP8116279 A JP 8116279A JP 8116279 A JP8116279 A JP 8116279A JP S568890 A JPS568890 A JP S568890A
Authority
JP
Japan
Prior art keywords
layer
type
wave guide
buried
far
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8116279A
Other languages
Japanese (ja)
Inventor
Yuichi Ide
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8116279A priority Critical patent/JPS568890A/en
Publication of JPS568890A publication Critical patent/JPS568890A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate wave guide as far as a reflection surface by expanding the width of a forbidden band bigger than that of an active layer wherein the absorption of laser light is minimized and the expansion of the laser light in vertical direction of p-n junction is prevented. CONSTITUTION:Epitaxial growth is made for a P-type GaAs active layer 15 which is installed on an n-type GaAs substrate 11 of a semiconductor device and interposed by an n-type Al0.3Ga0.7As layer 12 and a P-type Al0.3Ga0.7As layer 16. The resonator of the layer 15 is buried so that the end sides in a longitudinal direction may be covered by a P-type Al0.1Ga0.9As layer 13. Wherein, the layer 13 is composed of a high resistant light wave guide layer which has smaller reflective index, wider forbidden band and greater thickness than those of the layer 15. Furthermore, on the layer 13, an n-type Al0.3Ga0.7As layer 14 buried the end sides of the P-type Al0.3Ga0.7As layer 16 is formed at the same level with the surface of the layer 16. Zn is diffused in the layer 16 through the windows of an SiO2 mask 17 installed on the layers 14 and a metal electrodes 18 and 19 are formed on the mask 17 and under the base frame 11 respectively to facilitate wave guide as far as a reflection surface.
JP8116279A 1979-06-27 1979-06-27 Semiconductor laser and manufacture thereof Pending JPS568890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8116279A JPS568890A (en) 1979-06-27 1979-06-27 Semiconductor laser and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8116279A JPS568890A (en) 1979-06-27 1979-06-27 Semiconductor laser and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS568890A true JPS568890A (en) 1981-01-29

Family

ID=13738748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8116279A Pending JPS568890A (en) 1979-06-27 1979-06-27 Semiconductor laser and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS568890A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS587893A (en) * 1981-07-08 1983-01-17 Hitachi Ltd Semiconductor laser element
JPS58102588A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
JPS58102586A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
JPS58102587A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
DE3322388A1 (en) * 1982-10-29 1984-05-03 Rca Corp., New York, N.Y. SEMICONDUCTOR LASER
JPS6321889A (en) * 1986-07-16 1988-01-29 Matsushita Electric Ind Co Ltd Semiconductor laser
US5113405A (en) * 1989-12-12 1992-05-12 U.S. Philips Corp. Semiconductor diode laser having a stepped effective refractive index
JPH0537092A (en) * 1991-07-31 1993-02-12 Nec Corp Manufacture of optical semiconductor device
US6385225B1 (en) 1999-05-11 2002-05-07 Nec Corporation Window type semiconductor laser light emitting device and a process of fabricating thereof
CN111679454A (en) * 2020-06-19 2020-09-18 联合微电子中心有限责任公司 Method for manufacturing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924084A (en) * 1972-06-26 1974-03-04
JPS51134594A (en) * 1975-05-16 1976-11-22 Mitsubishi Electric Corp Semiconductor leser device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924084A (en) * 1972-06-26 1974-03-04
JPS51134594A (en) * 1975-05-16 1976-11-22 Mitsubishi Electric Corp Semiconductor leser device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS587893A (en) * 1981-07-08 1983-01-17 Hitachi Ltd Semiconductor laser element
JPS6318879B2 (en) * 1981-12-14 1988-04-20 Fujitsu Ltd
JPS58102586A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
JPS58102587A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
JPS58102588A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
DE3322388A1 (en) * 1982-10-29 1984-05-03 Rca Corp., New York, N.Y. SEMICONDUCTOR LASER
DE3322388C2 (en) * 1982-10-29 1994-11-03 Rca Corp Semiconductor laser
JPS6321889A (en) * 1986-07-16 1988-01-29 Matsushita Electric Ind Co Ltd Semiconductor laser
US5113405A (en) * 1989-12-12 1992-05-12 U.S. Philips Corp. Semiconductor diode laser having a stepped effective refractive index
JPH0537092A (en) * 1991-07-31 1993-02-12 Nec Corp Manufacture of optical semiconductor device
US6385225B1 (en) 1999-05-11 2002-05-07 Nec Corporation Window type semiconductor laser light emitting device and a process of fabricating thereof
CN111679454A (en) * 2020-06-19 2020-09-18 联合微电子中心有限责任公司 Method for manufacturing semiconductor device
CN111679454B (en) * 2020-06-19 2023-07-07 联合微电子中心有限责任公司 Method for manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
US3886579A (en) Avalanche photodiode
JPS568890A (en) Semiconductor laser and manufacture thereof
GB1521726A (en) Beam collimation using multiple coupled elements
JPS568889A (en) Manufacture of semiconductor laser
JPS55140286A (en) Buried heterogeneous structure semiconductor for use in laser
JPS5518094A (en) Semiconductor laser device with high optical output and horizontal fundamental mode
JPS5635484A (en) Semiconductor laser
JPS55108789A (en) Semiconductor laser
JPS5636184A (en) Manufacture of semiconductor laser
JPS57139984A (en) Buried photo emitting and receiving semiconductor integrated device
JPS564293A (en) Manufacture of semiconductor laser device
JPS57198684A (en) Manufacture of semiconductor device having multilayer semiconductor crystal layer
JPS6428986A (en) Semiconductor laser
JPS57139982A (en) Semiconductor laser element
JPS6412592A (en) Semiconductor laser device
JPS55123190A (en) Semiconductor light emitting device
JPS5669885A (en) Semiconductor laser device
JPS5694793A (en) Semiconductor laser device
JPS5680195A (en) Semiconductor laser device
JPS57139986A (en) Manufacure of semiconductor laser
JPS5654085A (en) Semiconductor laser and manufacture thereof
JPS5640294A (en) Semiconductor laser
JPS55128894A (en) Semiconductor light emitting device and method of fabricating the same
JPS56112783A (en) Semiconductor laser
JPS5518037A (en) Semiconductor laser