JPS6428986A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6428986A
JPS6428986A JP18592887A JP18592887A JPS6428986A JP S6428986 A JPS6428986 A JP S6428986A JP 18592887 A JP18592887 A JP 18592887A JP 18592887 A JP18592887 A JP 18592887A JP S6428986 A JPS6428986 A JP S6428986A
Authority
JP
Japan
Prior art keywords
groove
type
width
light emitting
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18592887A
Other languages
Japanese (ja)
Inventor
Makoto Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18592887A priority Critical patent/JPS6428986A/en
Publication of JPS6428986A publication Critical patent/JPS6428986A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce the coherency of a laser beam and to obtain high reliability by forming an electrode stripe width narrower than the width of a groove. CONSTITUTION:A parallel V-shaped groove is formed in a plane (D1-1), for example, 5mum or width and 2.0mum of depth with an etchant of NH4OH on an n-type GaAs substrate 1. Then, grown layers 2, 3, 4, 5, 6, 7 are sequentially grown by a liquid growth method. The layers are 0.2, 0.3, 0.08, 0.3, 1.0, 0.7mum thick in this order on a flat part. The n-type clad layer 2 is not flat on the groove in the part of a guided groove 11, and a structure of a thick photoconductive layer 3 is formed at a light emitting section. Further, with an SiO2 as a mask a P<+> type diffused layer 8 of 3mum of thickness is formed on a light emitting region, and a P-type electrode 10 and an N-type electrode 9 are formed.
JP18592887A 1987-07-24 1987-07-24 Semiconductor laser Pending JPS6428986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18592887A JPS6428986A (en) 1987-07-24 1987-07-24 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18592887A JPS6428986A (en) 1987-07-24 1987-07-24 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6428986A true JPS6428986A (en) 1989-01-31

Family

ID=16179327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18592887A Pending JPS6428986A (en) 1987-07-24 1987-07-24 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6428986A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05298445A (en) * 1992-04-17 1993-11-12 Japan Steel Works Ltd:The Method for separating picture signal and device therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05298445A (en) * 1992-04-17 1993-11-12 Japan Steel Works Ltd:The Method for separating picture signal and device therefor

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