JPS6481386A - Manufacture of optical semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a two-dimensional quantum well structure which can be easily realized with good reproducibility by forming fine grooves of V-shaped or U-shaped section on semiconductor laminated on a semiconductor substrate, and forming by an MOCVD method a semiconductor layer containing a thin active layer of the degree for presenting a quantum effect in the grooves. CONSTITUTION:After an n-type InP clad layer 20, an n-type InGaAsP guide layer 25 and an InP layer 30 are sequentially laminated on an n-type InP substrate 10, a photoresist 5 is patterned by a two-luminous flux interference exposure method, and the layers 30, 25 are so formed with Br-methanol series etchant that its section becomes a sinusoidal state. Then, when only the InP layer is removed with a hydrochloric acid series etchant, fine V-shaped grooves can be easily formed on the semiconductor with good reproducibility. Further, an n-type InGaAsP layer 50, an InGaAsP quantum well active layer 55, a p-type InGaAsP guide layer 60, g p-type InP clad layer 70, a p<+> type InGaAsP contact layer 80 are sequentially formed as a semiconductor laser.