JPS57159077A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS57159077A JPS57159077A JP4363781A JP4363781A JPS57159077A JP S57159077 A JPS57159077 A JP S57159077A JP 4363781 A JP4363781 A JP 4363781A JP 4363781 A JP4363781 A JP 4363781A JP S57159077 A JPS57159077 A JP S57159077A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- inp
- light
- semiconductor
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Weting (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain the integrated circuit device having a semiconductor laser formed on a substrate together with a photo waveguide passage, a light modulator and a light-detecting device by a method wherein a chemical etching process is performed on the laminated material consisting of the semiconductor whereon a semiconductor layer was laminated. CONSTITUTION:A mask layer 16 is coated on the laminated material A which was formed by successively laminating an InP semiconductor layer 11, an InGaAsP semiconductor layer 12, an InP semiconductor layer 13 and an InGaAsP semiconductor layer 14 on an InP substrate 10, and an etching process is performed on the above. A semiconductor layer U, one side face of which is located on the common surface 17 which is used as the reflecting surface of Fabry-Perot and the other side face is located on the common face 18 which will be used as the reflecting surface of Fabry-Perot which is parallel with the common surface 17, is obtained. As a result, an integrated circuit device, having the semiconductor layer formed on the substrate together with the photo waveguide passage, the light modulator and the light-detecting device, can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4363781A JPS57159077A (en) | 1981-03-25 | 1981-03-25 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4363781A JPS57159077A (en) | 1981-03-25 | 1981-03-25 | Manufacture of semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57159077A true JPS57159077A (en) | 1982-10-01 |
Family
ID=12669374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4363781A Pending JPS57159077A (en) | 1981-03-25 | 1981-03-25 | Manufacture of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57159077A (en) |
-
1981
- 1981-03-25 JP JP4363781A patent/JPS57159077A/en active Pending
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