JPS57190384A - Wavelength sweeping laser - Google Patents
Wavelength sweeping laserInfo
- Publication number
- JPS57190384A JPS57190384A JP7483581A JP7483581A JPS57190384A JP S57190384 A JPS57190384 A JP S57190384A JP 7483581 A JP7483581 A JP 7483581A JP 7483581 A JP7483581 A JP 7483581A JP S57190384 A JPS57190384 A JP S57190384A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- wavelength
- detecting section
- optical output
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
Abstract
PURPOSE:To stabilize both optical output and wavelength for the titled laser by a method wherein, in the case of the wavelength sweeping laser with a duplex feedback loop, an optical output detecting section and a wavelength detecting section are integrated on the same substrate. CONSTITUTION:The wavelength sweeping laser consists of a wavelength controlling type semiconductor laser 1 provided on the same substrate, an optical output detector 3, a wavelength detector 4, and amplifiers 5 and 6. In this constitution, the laser 1 and a detector 2 are formed on the same substrate. To be more precise, a laser section 20 and an optical output detecting section 30 are provided adjacently, and between them, an insulating layer 23 is provided by performing a chemical etching or an irradiation of proton. Also, on the detecting section 30, a terminal that will be used to apply inverted bias is installed, a waveguide passage 10 with periodic structure is formed on the laser section 20, and an N type GaAa active layer 13 is formed in the center part having no periodic structure. Subsequently, electrodes terminals 11 and 14 are provided respectively on the layer 13 and the periodic structure, and the light emitted from the waveguide passage 10 is incidented into the detecting section 30.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7483581A JPS57190384A (en) | 1981-05-20 | 1981-05-20 | Wavelength sweeping laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7483581A JPS57190384A (en) | 1981-05-20 | 1981-05-20 | Wavelength sweeping laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57190384A true JPS57190384A (en) | 1982-11-22 |
Family
ID=13558786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7483581A Pending JPS57190384A (en) | 1981-05-20 | 1981-05-20 | Wavelength sweeping laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57190384A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59205789A (en) * | 1983-04-11 | 1984-11-21 | アメリカン・テレフォン・アンド・テレグラフ・カムパニー | Semiconductor device |
JPS6045088A (en) * | 1983-08-23 | 1985-03-11 | Fujitsu Ltd | Semiconductor light emitting device |
JPS63199482A (en) * | 1987-01-21 | 1988-08-17 | エイ・ティ・アンド・ティ・コーポレーション | Hybrid laser for optical communication |
JPS63278291A (en) * | 1987-05-08 | 1988-11-15 | Mitsubishi Electric Corp | Semiconductor laser and its use |
JPS63278290A (en) * | 1987-05-08 | 1988-11-15 | Mitsubishi Electric Corp | Semiconductor laser and its use |
US5805630A (en) * | 1993-07-12 | 1998-09-08 | U.S. Philips Corporation | Optoelectronic semiconductor device with an array of semiconductor diode lasers and method of manufacturing such a device |
WO2012085596A1 (en) * | 2010-12-23 | 2012-06-28 | Oclaro Technology Ltd | A laser-locker assembly |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5365090A (en) * | 1976-11-19 | 1978-06-10 | Licentia Gmbh | Semiconductor laser output controller |
JPS5437485A (en) * | 1977-08-29 | 1979-03-19 | Fujitsu Ltd | Output stabilizing method for semiconductor laser |
JPS5474386A (en) * | 1977-10-26 | 1979-06-14 | Post Office | Controller |
-
1981
- 1981-05-20 JP JP7483581A patent/JPS57190384A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5365090A (en) * | 1976-11-19 | 1978-06-10 | Licentia Gmbh | Semiconductor laser output controller |
JPS5437485A (en) * | 1977-08-29 | 1979-03-19 | Fujitsu Ltd | Output stabilizing method for semiconductor laser |
JPS5474386A (en) * | 1977-10-26 | 1979-06-14 | Post Office | Controller |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59205789A (en) * | 1983-04-11 | 1984-11-21 | アメリカン・テレフォン・アンド・テレグラフ・カムパニー | Semiconductor device |
JPS6045088A (en) * | 1983-08-23 | 1985-03-11 | Fujitsu Ltd | Semiconductor light emitting device |
JPS63199482A (en) * | 1987-01-21 | 1988-08-17 | エイ・ティ・アンド・ティ・コーポレーション | Hybrid laser for optical communication |
JPS63278291A (en) * | 1987-05-08 | 1988-11-15 | Mitsubishi Electric Corp | Semiconductor laser and its use |
JPS63278290A (en) * | 1987-05-08 | 1988-11-15 | Mitsubishi Electric Corp | Semiconductor laser and its use |
US5805630A (en) * | 1993-07-12 | 1998-09-08 | U.S. Philips Corporation | Optoelectronic semiconductor device with an array of semiconductor diode lasers and method of manufacturing such a device |
WO2012085596A1 (en) * | 2010-12-23 | 2012-06-28 | Oclaro Technology Ltd | A laser-locker assembly |
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