JPS6449293A - Semiconductor laser with variable wavelength - Google Patents

Semiconductor laser with variable wavelength

Info

Publication number
JPS6449293A
JPS6449293A JP20611787A JP20611787A JPS6449293A JP S6449293 A JPS6449293 A JP S6449293A JP 20611787 A JP20611787 A JP 20611787A JP 20611787 A JP20611787 A JP 20611787A JP S6449293 A JPS6449293 A JP S6449293A
Authority
JP
Japan
Prior art keywords
layer
region
light
emitting region
bragg reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20611787A
Other languages
Japanese (ja)
Other versions
JPH0626268B2 (en
Inventor
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20611787A priority Critical patent/JPH0626268B2/en
Publication of JPS6449293A publication Critical patent/JPS6449293A/en
Publication of JPH0626268B2 publication Critical patent/JPH0626268B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Abstract

PURPOSE:To continuously vary an oscillation frequency without changing an oscillation threshold value by installing an active layer whose gain is obtained from a light-emitting region and a Bragg reflection region from among the light-emitting region, a phase control region and the Bragg reflection region. CONSTITUTION:After a diffraction grating 80 has been formed in a Bragg reflection (DBR) region 300 of a substrate 1, a light waveguide layer 2, a barrier layer 3, an active layer 4 and a clad layer 5 are laminated one upon another. Then, the layers 3, 4, 5 are removed selectively exclusive of a light-emitting region 100 and the DBR region 300; a second clad layer 10 is laminated. In succession, after grooves 51, 52 sandwiching a stripe 50 to be used as the light- emitting region have been formed, a current-blocking layer 6, a current-confining layer 7, a buried layer 8 and a contact layer 9 are formed. Electrodes 20, 21, 22 are formed on the side of the layer 9. During this process, a semiconductor layer around the contact layer 9 between individual regions and around the stripe 50 is removed so that an electric current can flow to the three regions independently.
JP20611787A 1987-08-19 1987-08-19 Tunable semiconductor laser Expired - Lifetime JPH0626268B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20611787A JPH0626268B2 (en) 1987-08-19 1987-08-19 Tunable semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20611787A JPH0626268B2 (en) 1987-08-19 1987-08-19 Tunable semiconductor laser

Publications (2)

Publication Number Publication Date
JPS6449293A true JPS6449293A (en) 1989-02-23
JPH0626268B2 JPH0626268B2 (en) 1994-04-06

Family

ID=16518078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20611787A Expired - Lifetime JPH0626268B2 (en) 1987-08-19 1987-08-19 Tunable semiconductor laser

Country Status (1)

Country Link
JP (1) JPH0626268B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59179510A (en) * 1983-03-29 1984-10-12 Toa Nenryo Kogyo Kk Preparation of ethylene copolymer
EP0391334A2 (en) * 1989-04-04 1990-10-10 Canon Kabushiki Kaisha Semiconductor laser element capable of changing emission wavelength, and wavelength selective fitter, and methods of driving the same
JPH0332090A (en) * 1989-06-28 1991-02-12 Hikari Keisoku Gijutsu Kaihatsu Kk Variable wavelength laser
JPH0391276A (en) * 1989-09-01 1991-04-16 Nec Corp Driving method of variable wavelength semiconductor laser
JPH06125138A (en) * 1992-10-10 1994-05-06 Anritsu Corp Laser
JP2003536264A (en) * 2000-06-02 2003-12-02 アジリティー コミュニケイションズ インコーポレイテッド High power, manufacturable extraction grating distributed Bragg reflector laser
JP2019096792A (en) * 2017-11-24 2019-06-20 日本電信電話株式会社 Semiconductor laser

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59179510A (en) * 1983-03-29 1984-10-12 Toa Nenryo Kogyo Kk Preparation of ethylene copolymer
EP0391334A2 (en) * 1989-04-04 1990-10-10 Canon Kabushiki Kaisha Semiconductor laser element capable of changing emission wavelength, and wavelength selective fitter, and methods of driving the same
JPH0332090A (en) * 1989-06-28 1991-02-12 Hikari Keisoku Gijutsu Kaihatsu Kk Variable wavelength laser
JPH0391276A (en) * 1989-09-01 1991-04-16 Nec Corp Driving method of variable wavelength semiconductor laser
JPH06125138A (en) * 1992-10-10 1994-05-06 Anritsu Corp Laser
JP2003536264A (en) * 2000-06-02 2003-12-02 アジリティー コミュニケイションズ インコーポレイテッド High power, manufacturable extraction grating distributed Bragg reflector laser
JP2019096792A (en) * 2017-11-24 2019-06-20 日本電信電話株式会社 Semiconductor laser

Also Published As

Publication number Publication date
JPH0626268B2 (en) 1994-04-06

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