JPS6484776A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6484776A
JPS6484776A JP24486587A JP24486587A JPS6484776A JP S6484776 A JPS6484776 A JP S6484776A JP 24486587 A JP24486587 A JP 24486587A JP 24486587 A JP24486587 A JP 24486587A JP S6484776 A JPS6484776 A JP S6484776A
Authority
JP
Japan
Prior art keywords
active layer
layer
beam radiation
radiation end
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24486587A
Other languages
Japanese (ja)
Other versions
JP2671317B2 (en
Inventor
Mitsuhiro Kitamura
Yuzo Ono
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62244865A priority Critical patent/JP2671317B2/en
Publication of JPS6484776A publication Critical patent/JPS6484776A/en
Application granted granted Critical
Publication of JP2671317B2 publication Critical patent/JP2671317B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To converge an output beam in an upward direction by a method wherein a diffraction grating is made to be a shape partially resembling a ripple whose cycle becomes short with a distance becoming more distant from a beam radiation end of an active layer, which is curved to be a concentrically circular shape or a shape resembling a concentric circle and whose center is situated near the beam radiation end. CONSTITUTION:A diffraction grating 7 is formed partially on an n-InP substrate 1 ; a waveguide layer 10, an active layer 4, a clad layer 5 and a contact layer 6 are laminated on it. In succession, a mesa stripe 13 is formed; the surface of the waveguide layer 10 excluding this part is exposed; a convergence grating coupler 11 is formed. The convergence grating coupler 11 is constituted in such a way that its cycle becomes small with a distance becoming more distant from the active layer 4 and that it is curved to be a circular arc whose center is situated near a beam radiation end of the active layer 4. Lastly, an electrode 8 is formed; a dielectric multilayer film 12 is formed on an end face of a laser; a desired semiconductor laser is obtained. As a result, a laser output beam radiated upward can be converged down to a spot of about 5mum.
JP62244865A 1987-09-28 1987-09-28 Semiconductor laser Expired - Lifetime JP2671317B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62244865A JP2671317B2 (en) 1987-09-28 1987-09-28 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62244865A JP2671317B2 (en) 1987-09-28 1987-09-28 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS6484776A true JPS6484776A (en) 1989-03-30
JP2671317B2 JP2671317B2 (en) 1997-10-29

Family

ID=17125143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62244865A Expired - Lifetime JP2671317B2 (en) 1987-09-28 1987-09-28 Semiconductor laser

Country Status (1)

Country Link
JP (1) JP2671317B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03145174A (en) * 1989-10-31 1991-06-20 Canon Inc External resonator type laser
JP2019500753A (en) * 2015-12-17 2019-01-10 フィニサー コーポレイション Surface bonding system
US10992104B2 (en) 2015-12-17 2021-04-27 Ii-Vi Delaware, Inc. Dual layer grating coupler
US11404850B2 (en) 2019-04-22 2022-08-02 Ii-Vi Delaware, Inc. Dual grating-coupled lasers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6396983A (en) * 1986-10-14 1988-04-27 Matsushita Electric Ind Co Ltd Opticai integrated circuit
JPS63117337A (en) * 1986-11-05 1988-05-21 Sharp Corp Waveguide type optical head
JPS63208294A (en) * 1987-02-24 1988-08-29 Mitsubishi Electric Corp Semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6396983A (en) * 1986-10-14 1988-04-27 Matsushita Electric Ind Co Ltd Opticai integrated circuit
JPS63117337A (en) * 1986-11-05 1988-05-21 Sharp Corp Waveguide type optical head
JPS63208294A (en) * 1987-02-24 1988-08-29 Mitsubishi Electric Corp Semiconductor laser

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03145174A (en) * 1989-10-31 1991-06-20 Canon Inc External resonator type laser
JP2019500753A (en) * 2015-12-17 2019-01-10 フィニサー コーポレイション Surface bonding system
US10826267B2 (en) 2015-12-17 2020-11-03 Ii-Vi Delaware Inc. Surface coupled systems
US10992104B2 (en) 2015-12-17 2021-04-27 Ii-Vi Delaware, Inc. Dual layer grating coupler
US11404850B2 (en) 2019-04-22 2022-08-02 Ii-Vi Delaware, Inc. Dual grating-coupled lasers

Also Published As

Publication number Publication date
JP2671317B2 (en) 1997-10-29

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