JPS55132091A - Semiconductor laser array - Google Patents

Semiconductor laser array

Info

Publication number
JPS55132091A
JPS55132091A JP4001679A JP4001679A JPS55132091A JP S55132091 A JPS55132091 A JP S55132091A JP 4001679 A JP4001679 A JP 4001679A JP 4001679 A JP4001679 A JP 4001679A JP S55132091 A JPS55132091 A JP S55132091A
Authority
JP
Japan
Prior art keywords
layers
junction
lasers
clad
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4001679A
Other languages
Japanese (ja)
Inventor
Takaaki Mukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4001679A priority Critical patent/JPS55132091A/en
Publication of JPS55132091A publication Critical patent/JPS55132091A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Abstract

PURPOSE:To obtain a laser having a substantially circular cross-section by providing a semiconductor laser array wherein a plurality of activated layers are laminated on a substrate through the medium of clad layers and forming a homogeneous junction by forming a diffusion layer from the upper surface. CONSTITUTION:On an n-type substrate 11, formed are a plurality of GaAs activated layers G1-G5 through the mediums of Al1-xGaxAs clad layers H1-H6 and a similar clad layer H6 is superposed thereon. Then, a Zn diffusion layer 14 is formed to constitute a pn homogeneous junction 13. Then, electrodes 15, 16 are formed to provide lasers Q1-Q5. As an electric current is applied from positive electrode constituted by the electrode 16 through the layer 14, junction 13, activated layers Gi and clad layers Hi, laser beams Li are obtained at regions Mi of the homogeneous junction 13 at the end where the laminated layers 12 and pn junction 13 cross at a right angle. since the lasers Qi are bonded to adjacent lasers, lasers L1-L5 are produced at the same phase, so that a laser beam is formed to have a width equal to the width of the region Mi and length equal to the length of region of the laser array Q1-Q5. It is, therefore, possible to emit a beam having a circular cross- section by suitably selecting the thicknesses of the layers Gi and Hi.
JP4001679A 1979-04-02 1979-04-02 Semiconductor laser array Pending JPS55132091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4001679A JPS55132091A (en) 1979-04-02 1979-04-02 Semiconductor laser array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4001679A JPS55132091A (en) 1979-04-02 1979-04-02 Semiconductor laser array

Publications (1)

Publication Number Publication Date
JPS55132091A true JPS55132091A (en) 1980-10-14

Family

ID=12569102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4001679A Pending JPS55132091A (en) 1979-04-02 1979-04-02 Semiconductor laser array

Country Status (1)

Country Link
JP (1) JPS55132091A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115892A (en) * 1981-01-12 1982-07-19 Agency Of Ind Science & Technol Semiconductor laser element
JPS5932188A (en) * 1982-08-16 1984-02-21 Omron Tateisi Electronics Co Beam scan type semiconductor laser
JPS59117187A (en) * 1982-12-23 1984-07-06 Omron Tateisi Electronics Co Semiconductor laser for branching beam
JPS59167084A (en) * 1983-03-12 1984-09-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS59208889A (en) * 1983-05-12 1984-11-27 アメリカン・テレフォン・アンド・テレグラフ・カムパニー Semiconductor laser
JP2008254929A (en) * 2007-03-30 2008-10-23 Manitowoc Crane Co Inc Control console having in plurality of use positions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112080A (en) * 1977-03-10 1978-09-30 Mitsubishi Electric Corp Semiconductor laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112080A (en) * 1977-03-10 1978-09-30 Mitsubishi Electric Corp Semiconductor laser

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115892A (en) * 1981-01-12 1982-07-19 Agency Of Ind Science & Technol Semiconductor laser element
JPS5932188A (en) * 1982-08-16 1984-02-21 Omron Tateisi Electronics Co Beam scan type semiconductor laser
JPH041515B2 (en) * 1982-08-16 1992-01-13 Omron Tateisi Electronics Co
JPS59117187A (en) * 1982-12-23 1984-07-06 Omron Tateisi Electronics Co Semiconductor laser for branching beam
JPH041517B2 (en) * 1982-12-23 1992-01-13 Omron Tateisi Electronics Co
JPS59167084A (en) * 1983-03-12 1984-09-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS59208889A (en) * 1983-05-12 1984-11-27 アメリカン・テレフォン・アンド・テレグラフ・カムパニー Semiconductor laser
JP2008254929A (en) * 2007-03-30 2008-10-23 Manitowoc Crane Co Inc Control console having in plurality of use positions

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