JPS57164590A - Photosemiconductor device - Google Patents

Photosemiconductor device

Info

Publication number
JPS57164590A
JPS57164590A JP4863581A JP4863581A JPS57164590A JP S57164590 A JPS57164590 A JP S57164590A JP 4863581 A JP4863581 A JP 4863581A JP 4863581 A JP4863581 A JP 4863581A JP S57164590 A JPS57164590 A JP S57164590A
Authority
JP
Japan
Prior art keywords
type
layer
laser
burried
impression
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4863581A
Other languages
Japanese (ja)
Other versions
JPS6243355B2 (en
Inventor
Mitsuhiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4863581A priority Critical patent/JPS57164590A/en
Publication of JPS57164590A publication Critical patent/JPS57164590A/en
Publication of JPS6243355B2 publication Critical patent/JPS6243355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To allow laser beam to deflect by the selective impression of voltage on a deflecting electrode, by providing the electrode on a semiconductor layer surrounding the both transverse sides of an active layer in a stripe type device of burried type double hetero structure. CONSTITUTION:An n type GaAlAs layer 2, a p type GaAl clad layer 3, GaAs active layer 4 and p type GaAlAs layer 5 are provided successively on an n type GaAs substrate 1, and a p type GaAlAs layer 6 for the prevention of current is provided on a part of an n type layer 2 with an n type GaAlAs layer 7 for shutting up lateral directional light provided thereon to constitute double hetero burried type laser. The mode of laser oscillation can be varied to add the function for light deflection by providing deflecting electrodes 11, 13 on the layer 7 with the impression of required voltage thereon. Thus, a monolithic deflector on laser miniaturizes the device and facilitating a mutual adjustment.
JP4863581A 1981-04-01 1981-04-01 Photosemiconductor device Granted JPS57164590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4863581A JPS57164590A (en) 1981-04-01 1981-04-01 Photosemiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4863581A JPS57164590A (en) 1981-04-01 1981-04-01 Photosemiconductor device

Publications (2)

Publication Number Publication Date
JPS57164590A true JPS57164590A (en) 1982-10-09
JPS6243355B2 JPS6243355B2 (en) 1987-09-12

Family

ID=12808824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4863581A Granted JPS57164590A (en) 1981-04-01 1981-04-01 Photosemiconductor device

Country Status (1)

Country Link
JP (1) JPS57164590A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236190A (en) * 1985-04-12 1986-10-21 Agency Of Ind Science & Technol Semiconductor laser
JPS62145792A (en) * 1985-12-20 1987-06-29 Hitachi Ltd Semiconductor laser device
JPS63158887A (en) * 1986-09-02 1988-07-01 Nippon Sheet Glass Co Ltd Semiconductor laser having optical deflection function

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236190A (en) * 1985-04-12 1986-10-21 Agency Of Ind Science & Technol Semiconductor laser
JPS62145792A (en) * 1985-12-20 1987-06-29 Hitachi Ltd Semiconductor laser device
JPS63158887A (en) * 1986-09-02 1988-07-01 Nippon Sheet Glass Co Ltd Semiconductor laser having optical deflection function

Also Published As

Publication number Publication date
JPS6243355B2 (en) 1987-09-12

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