JPS6425494A - Semiconductor laser device and manufacture thereof - Google Patents
Semiconductor laser device and manufacture thereofInfo
- Publication number
- JPS6425494A JPS6425494A JP62182674A JP18267487A JPS6425494A JP S6425494 A JPS6425494 A JP S6425494A JP 62182674 A JP62182674 A JP 62182674A JP 18267487 A JP18267487 A JP 18267487A JP S6425494 A JPS6425494 A JP S6425494A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wafer
- groove
- semiconductor laser
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To perform an oscillation of single wavelength and a high speed modulation in a semiconductor laser device in which a diffraction grating having a phase shifting region is disposed near an active layer by forming a mesa groove parallel to the active layer deeper than a P-N junction, and forming an insulating film on the sidewall and a laser beam irradiating end face. CONSTITUTION:A wafer formed with a laser structure including a diffraction grating 2 having a phase shifting region is formed. Then, a mesa groove 12 parallel to an active layer 4 is formed deeper than a P-N junction except a stripe region including the layer 4 and its vicinity on the wafer, and a mesa groove 13 perpendicular to the layer 4 is formed deeper than the grating 2. Thereafter, insulating films 9 are formed at least on the groove 12 parallel to the layer 4 and the groove 13 perpendicular to the layer 4. Then, the wafer is isolated to have a chip-like form. In the above steps, the films 9 which operate as reflection preventive films are formed on laser beam irradiating end faces in the state of the wafer to obtain a semiconductor laser device which reduces the irregularity in the reflectivity of the individual chips, oscillates in a single wavelength, and performs a high speed modulation can be obtained in a high yield.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62182674A JPS6425494A (en) | 1987-07-21 | 1987-07-21 | Semiconductor laser device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62182674A JPS6425494A (en) | 1987-07-21 | 1987-07-21 | Semiconductor laser device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425494A true JPS6425494A (en) | 1989-01-27 |
Family
ID=16122452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62182674A Pending JPS6425494A (en) | 1987-07-21 | 1987-07-21 | Semiconductor laser device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425494A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01114092A (en) * | 1987-10-28 | 1989-05-02 | Hitachi Ltd | Buried-type semiconductor laser |
US8170076B2 (en) | 2002-03-01 | 2012-05-01 | Sharp Kabushiki Kaisha | GaN laser element |
US9638192B2 (en) | 2009-12-16 | 2017-05-02 | Continental Automotive Gmbh | Fuel pump |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6136988A (en) * | 1984-07-30 | 1986-02-21 | Nec Corp | Semiconductor laser of single axis mode |
JPS6218782A (en) * | 1985-07-18 | 1987-01-27 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser of buried structure |
-
1987
- 1987-07-21 JP JP62182674A patent/JPS6425494A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6136988A (en) * | 1984-07-30 | 1986-02-21 | Nec Corp | Semiconductor laser of single axis mode |
JPS6218782A (en) * | 1985-07-18 | 1987-01-27 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser of buried structure |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01114092A (en) * | 1987-10-28 | 1989-05-02 | Hitachi Ltd | Buried-type semiconductor laser |
US8170076B2 (en) | 2002-03-01 | 2012-05-01 | Sharp Kabushiki Kaisha | GaN laser element |
US8548019B2 (en) | 2002-03-01 | 2013-10-01 | Sharp Kabushiki Kaisha | GaN laser element |
US8824516B2 (en) | 2002-03-01 | 2014-09-02 | Sharp Kabushiki Kaisha | GaN-based laser device |
US9638192B2 (en) | 2009-12-16 | 2017-05-02 | Continental Automotive Gmbh | Fuel pump |
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