JPS6425494A - Semiconductor laser device and manufacture thereof - Google Patents

Semiconductor laser device and manufacture thereof

Info

Publication number
JPS6425494A
JPS6425494A JP62182674A JP18267487A JPS6425494A JP S6425494 A JPS6425494 A JP S6425494A JP 62182674 A JP62182674 A JP 62182674A JP 18267487 A JP18267487 A JP 18267487A JP S6425494 A JPS6425494 A JP S6425494A
Authority
JP
Japan
Prior art keywords
layer
wafer
groove
semiconductor laser
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62182674A
Other languages
Japanese (ja)
Inventor
Yasuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62182674A priority Critical patent/JPS6425494A/en
Publication of JPS6425494A publication Critical patent/JPS6425494A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To perform an oscillation of single wavelength and a high speed modulation in a semiconductor laser device in which a diffraction grating having a phase shifting region is disposed near an active layer by forming a mesa groove parallel to the active layer deeper than a P-N junction, and forming an insulating film on the sidewall and a laser beam irradiating end face. CONSTITUTION:A wafer formed with a laser structure including a diffraction grating 2 having a phase shifting region is formed. Then, a mesa groove 12 parallel to an active layer 4 is formed deeper than a P-N junction except a stripe region including the layer 4 and its vicinity on the wafer, and a mesa groove 13 perpendicular to the layer 4 is formed deeper than the grating 2. Thereafter, insulating films 9 are formed at least on the groove 12 parallel to the layer 4 and the groove 13 perpendicular to the layer 4. Then, the wafer is isolated to have a chip-like form. In the above steps, the films 9 which operate as reflection preventive films are formed on laser beam irradiating end faces in the state of the wafer to obtain a semiconductor laser device which reduces the irregularity in the reflectivity of the individual chips, oscillates in a single wavelength, and performs a high speed modulation can be obtained in a high yield.
JP62182674A 1987-07-21 1987-07-21 Semiconductor laser device and manufacture thereof Pending JPS6425494A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62182674A JPS6425494A (en) 1987-07-21 1987-07-21 Semiconductor laser device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62182674A JPS6425494A (en) 1987-07-21 1987-07-21 Semiconductor laser device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6425494A true JPS6425494A (en) 1989-01-27

Family

ID=16122452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62182674A Pending JPS6425494A (en) 1987-07-21 1987-07-21 Semiconductor laser device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6425494A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01114092A (en) * 1987-10-28 1989-05-02 Hitachi Ltd Buried-type semiconductor laser
US8170076B2 (en) 2002-03-01 2012-05-01 Sharp Kabushiki Kaisha GaN laser element
US9638192B2 (en) 2009-12-16 2017-05-02 Continental Automotive Gmbh Fuel pump

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136988A (en) * 1984-07-30 1986-02-21 Nec Corp Semiconductor laser of single axis mode
JPS6218782A (en) * 1985-07-18 1987-01-27 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser of buried structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136988A (en) * 1984-07-30 1986-02-21 Nec Corp Semiconductor laser of single axis mode
JPS6218782A (en) * 1985-07-18 1987-01-27 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser of buried structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01114092A (en) * 1987-10-28 1989-05-02 Hitachi Ltd Buried-type semiconductor laser
US8170076B2 (en) 2002-03-01 2012-05-01 Sharp Kabushiki Kaisha GaN laser element
US8548019B2 (en) 2002-03-01 2013-10-01 Sharp Kabushiki Kaisha GaN laser element
US8824516B2 (en) 2002-03-01 2014-09-02 Sharp Kabushiki Kaisha GaN-based laser device
US9638192B2 (en) 2009-12-16 2017-05-02 Continental Automotive Gmbh Fuel pump

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