EP0138567A3 - Semiconductor diode lasers - Google Patents
Semiconductor diode lasers Download PDFInfo
- Publication number
- EP0138567A3 EP0138567A3 EP84306901A EP84306901A EP0138567A3 EP 0138567 A3 EP0138567 A3 EP 0138567A3 EP 84306901 A EP84306901 A EP 84306901A EP 84306901 A EP84306901 A EP 84306901A EP 0138567 A3 EP0138567 A3 EP 0138567A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- laser
- semiconductor diode
- different parts
- diode lasers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
Abstract
A semiconductor diode laser of the kind in which laser ra
diation occurs in an active region in a layer (3) of semiconductor
material wherein optical confinement of the radiation to a por
tion (19) of said layer so as to direct light from said region to
a light waveguide is obtained by virtue of differences in the re
fractive index of different parts of said layer arising from me
chanical stresses in said layer, produced, for example, by dif
ferential thermal contracting during fabrication of the laser of
different parts (96, 11b and 13, 15 or 21 and 5 or 23 and 3)
of the laser structure.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB838327296A GB8327296D0 (en) | 1983-10-12 | 1983-10-12 | Semiconductor diode lasers |
GB8327296 | 1983-10-12 | ||
GB838332679A GB8332679D0 (en) | 1983-12-07 | 1983-12-07 | Semiconductor diode lasers |
GB8332679 | 1983-12-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0138567A2 EP0138567A2 (en) | 1985-04-24 |
EP0138567A3 true EP0138567A3 (en) | 1985-05-29 |
Family
ID=26286912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP84306901A Withdrawn EP0138567A3 (en) | 1983-10-12 | 1984-10-10 | Semiconductor diode lasers |
Country Status (3)
Country | Link |
---|---|
US (1) | US4663761A (en) |
EP (1) | EP0138567A3 (en) |
GB (1) | GB2149572B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5145807A (en) * | 1988-05-11 | 1992-09-08 | Mitsubishi Kasei Corporation | Method of making semiconductor laser devices |
DE69104573T2 (en) * | 1990-08-03 | 1995-04-20 | Philips Nv | Optical amplifier. |
JPH0794833A (en) * | 1993-09-22 | 1995-04-07 | Mitsubishi Electric Corp | Semiconductor laser and its manufacturing method |
US5561680A (en) * | 1994-12-20 | 1996-10-01 | Philips Electronics North America Corporation | II-VI semiconductor diode laser having a strained layer |
DE102017112242B4 (en) * | 2016-06-20 | 2019-10-24 | Osram Opto Semiconductors Gmbh | Edge-emitting semiconductor laser |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2029083A (en) * | 1978-08-18 | 1980-03-12 | Standard Telephones Cables Ltd | Semiconductor waveguide devices |
US4212020A (en) * | 1978-07-21 | 1980-07-08 | California Institute Of Technology | Solid state electro-optical devices on a semi-insulating substrate |
GB2057748A (en) * | 1979-09-04 | 1981-04-01 | Matsushita Electric Ind Co Ltd | Semiconductor lasers |
US4334311A (en) * | 1980-05-13 | 1982-06-08 | Mitsubishi Denki Kabushiki Kaisha | Transverse junction stripe semiconductor laser device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4183038A (en) * | 1978-03-29 | 1980-01-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
-
1984
- 1984-10-01 US US06/656,496 patent/US4663761A/en not_active Expired - Fee Related
- 1984-10-10 GB GB08425642A patent/GB2149572B/en not_active Expired
- 1984-10-10 EP EP84306901A patent/EP0138567A3/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4212020A (en) * | 1978-07-21 | 1980-07-08 | California Institute Of Technology | Solid state electro-optical devices on a semi-insulating substrate |
GB2029083A (en) * | 1978-08-18 | 1980-03-12 | Standard Telephones Cables Ltd | Semiconductor waveguide devices |
GB2057748A (en) * | 1979-09-04 | 1981-04-01 | Matsushita Electric Ind Co Ltd | Semiconductor lasers |
US4334311A (en) * | 1980-05-13 | 1982-06-08 | Mitsubishi Denki Kabushiki Kaisha | Transverse junction stripe semiconductor laser device |
Non-Patent Citations (2)
Title |
---|
APPLIED PHYSICS LETTERS, vol. 41, no. 2, 15th July 1982, pages 129-131, American Institute of Physics, New York, US; Y.C. CHEN et al.: "Thermal waveguiding in oxide-defined, narrow-stripe, large-optical-cavity lasers" * |
ELECTRONICS LETTERS, vol. 16, no. 13, 19th June 1980, pages 510-511, Hitchin, Herts., GB; T.P. LEE et al.: "Low threshold current transverse junction lasers on semi-insulating substrates by M.B.E." * |
Also Published As
Publication number | Publication date |
---|---|
GB2149572B (en) | 1988-02-24 |
EP0138567A2 (en) | 1985-04-24 |
GB8425642D0 (en) | 1984-11-14 |
GB2149572A (en) | 1985-06-12 |
US4663761A (en) | 1987-05-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Designated state(s): DE FR NL |
|
AK | Designated contracting states |
Designated state(s): DE FR NL |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 19860130 |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: BARNARD, JOSEPH ALAN Inventor name: PUN, EDWIN YUE BUN |