JPS6472581A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6472581A
JPS6472581A JP22862087A JP22862087A JPS6472581A JP S6472581 A JPS6472581 A JP S6472581A JP 22862087 A JP22862087 A JP 22862087A JP 22862087 A JP22862087 A JP 22862087A JP S6472581 A JPS6472581 A JP S6472581A
Authority
JP
Japan
Prior art keywords
wavelength
laser
oscillation
lambda1
lambda0
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22862087A
Other languages
Japanese (ja)
Inventor
Hideaki Yamakawa
Hiroyuki Ibe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22862087A priority Critical patent/JPS6472581A/en
Priority to DE88302252T priority patent/DE3884433T2/en
Priority to EP88302252A priority patent/EP0283248B1/en
Publication of JPS6472581A publication Critical patent/JPS6472581A/en
Priority to US07/397,887 priority patent/US4977561A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To switch an oscillation wavelength of a semiconductor laser by an optical input and to switch it at a high speed by selecting an oscillation axis mode in response to an incident light on the laser by utilizing the difference of the oscillation wavelengths due to the difference of the axial modes of the laser. CONSTITUTION:A light 21 having a wavelength substantially coincident with a wavelength lambda1 is incident to a semiconductor laser 10 which has at least two oscillation axial modes of wavelengths lambda0, lambda1 and is oscillated with a wavelength lambda0 to switch the oscillation wavelength of the laser 10 from the lambda0 to the lambda1, thereby maintaining the oscillation wavelength of the laser 10 lambda1 even if the incident level of the light 21 of the wavelength substantially coincident with the wavelength lambda1 is reduced. For example, the laser beam 21 of a second semiconductor laser 20 is guided by the first semiconductor laser 10, and a laser radiation 11 of the laser 10 is produced as an output light. The laser 10 is formed into a DFB laser to be oscillated at the wavelength lambda0 in which a part of the diffraction grating is shifted by lambda/4, and the oscillated wavelength is brought into coincidence with the Bragg's wavelength.
JP22862087A 1987-03-17 1987-09-14 Semiconductor laser device Pending JPS6472581A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP22862087A JPS6472581A (en) 1987-09-14 1987-09-14 Semiconductor laser device
DE88302252T DE3884433T2 (en) 1987-03-17 1988-03-15 Laser devices.
EP88302252A EP0283248B1 (en) 1987-03-17 1988-03-15 Laser devices
US07/397,887 US4977561A (en) 1987-03-17 1989-08-24 Oscillation mode switching laser devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22862087A JPS6472581A (en) 1987-09-14 1987-09-14 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6472581A true JPS6472581A (en) 1989-03-17

Family

ID=16879196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22862087A Pending JPS6472581A (en) 1987-03-17 1987-09-14 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6472581A (en)

Similar Documents

Publication Publication Date Title
JPS5743485A (en) Semiconductor ring laser device
CA2133235A1 (en) Reflective Digitally Tunable Laser
CA2149156A1 (en) Semiconductor Laser Having Integrated Waveguiding Lens
EP0855587A3 (en) Wavelenght-variable light source and OTDR apparatus
EP0256826A3 (en) Thermal imagers
JPS5660088A (en) Multiwavelength light source
JPS5737893A (en) Semiconductor laser
JPS6472581A (en) Semiconductor laser device
EP0138567A3 (en) Semiconductor diode lasers
ATE203357T1 (en) DIODE LASER PUMPED MULTI-MODE WAVEGUIDE LASER, ESPECIALLY FIBER LASER
JPS55126208A (en) Light emitting semiconductor device
JPS60207389A (en) Semiconductor laser device
EP0176329A3 (en) Laser diodes
JPS5690642A (en) Optical communication system
JPS5621391A (en) External resonator-equipped semiconductor laser element
JPS6435423A (en) Light wavelength conversion module
JPS5588030A (en) Photo branching method
JPS57187983A (en) Light regeneration and amplification by semiconductor laser
JPS57180191A (en) Laser for wide range of wavelength
JPS6418132A (en) Optical coupler
JPS5666831A (en) Light logical element
JPS6474789A (en) Semiconductor laser device
JPS5533127A (en) Photo coupler
JPS57161774A (en) Hologram lens making method
JPS6444915A (en) Optical coupling device