JPS57187983A - Light regeneration and amplification by semiconductor laser - Google Patents

Light regeneration and amplification by semiconductor laser

Info

Publication number
JPS57187983A
JPS57187983A JP7228981A JP7228981A JPS57187983A JP S57187983 A JPS57187983 A JP S57187983A JP 7228981 A JP7228981 A JP 7228981A JP 7228981 A JP7228981 A JP 7228981A JP S57187983 A JPS57187983 A JP S57187983A
Authority
JP
Japan
Prior art keywords
lambda1
wavelength
mode
semiconductor laser
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7228981A
Other languages
Japanese (ja)
Inventor
Yoshihisa Yamamoto
Takaaki Mukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7228981A priority Critical patent/JPS57187983A/en
Publication of JPS57187983A publication Critical patent/JPS57187983A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4006—Injection locking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold
    • H01S5/5072—Gain clamping, i.e. stabilisation by saturation using a further mode or frequency

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make regeneration and amplification of weak optical power used for fiber optics transmission possible by a method wherein a mode of an oscillation axis of a semiconductor laser is changed-over by injection of minute outside light and output of the semiconductor laser is taken out via a wavelength filter. CONSTITUTION:A semiconductor laser 10 is making oscillation of single mode of the axis of wavelength lambda0 while there is no injection of outside light. The outside light lambda1' whose wavelength is nearly identical with that of other mode of axis of the semiconductor laser 10, for instance lambda1, is injected into the semiconductor laser. While the power of the injected light lambda1' is small, the gain of the mode of the axis of the wavelength lambda0 exceeds the gain of the mode of the wavelength lambda1, so that the oscillation of the mode of the axis of the wavelength lambda0 is continued. When the power of the injected light lambda1' becomes large and the gain of the mode of the axis of the wavelength lambda1 outruns the gain of the mode of the axis of the wavelength lambda0, the oscillation mode jumps from lambda0 to lambda1. Then a wavelength filter 12 which passes the light of the wavelength lambda1 and blocks the light of the wavelenth lambda0 is provided behind the semiconductor laser 10, so that the output lambda1 can be obtained according to the existence of the injected light lambda1'.
JP7228981A 1981-05-15 1981-05-15 Light regeneration and amplification by semiconductor laser Pending JPS57187983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7228981A JPS57187983A (en) 1981-05-15 1981-05-15 Light regeneration and amplification by semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7228981A JPS57187983A (en) 1981-05-15 1981-05-15 Light regeneration and amplification by semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57187983A true JPS57187983A (en) 1982-11-18

Family

ID=13484961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7228981A Pending JPS57187983A (en) 1981-05-15 1981-05-15 Light regeneration and amplification by semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57187983A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283248A2 (en) * 1987-03-17 1988-09-21 Kabushiki Kaisha Toshiba Laser devices
EP0639876A1 (en) * 1993-08-20 1995-02-22 Alcatel N.V. Optical semiconductor amplifier with reduced non-linearity

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125710A (en) * 1974-08-28 1976-03-02 Hitachi Ltd JISHAKUHATSUDENKI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125710A (en) * 1974-08-28 1976-03-02 Hitachi Ltd JISHAKUHATSUDENKI

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283248A2 (en) * 1987-03-17 1988-09-21 Kabushiki Kaisha Toshiba Laser devices
US4977561A (en) * 1987-03-17 1990-12-11 Kabushiki Kaisha Toshiba Oscillation mode switching laser devices
EP0639876A1 (en) * 1993-08-20 1995-02-22 Alcatel N.V. Optical semiconductor amplifier with reduced non-linearity
FR2709189A1 (en) * 1993-08-20 1995-02-24 Alcatel Nv Semiconductor optical amplifier with reduced non-linearity.

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