JPS5621391A - External resonator-equipped semiconductor laser element - Google Patents
External resonator-equipped semiconductor laser elementInfo
- Publication number
- JPS5621391A JPS5621391A JP9662079A JP9662079A JPS5621391A JP S5621391 A JPS5621391 A JP S5621391A JP 9662079 A JP9662079 A JP 9662079A JP 9662079 A JP9662079 A JP 9662079A JP S5621391 A JPS5621391 A JP S5621391A
- Authority
- JP
- Japan
- Prior art keywords
- etalons
- lights
- laser element
- reflection
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To prevent fluctuation of oscilation wavelength due to variation of temperature, by forming a reflection preventing film on one side of output face of a laser element, and by causing light put out from said face to reflect and return through etalon at least once. CONSTITUTION:By providing a semiconductor laser element 3 with two parallel output faces 4 and 5, a resonator is provided and, at the same time, the element 3 is prevented from resonance. In this mechanism, one output face 5 is provided with a reflection-preventing film, such as SiO2 film etc., to eliminate reflection, and all the lights 7 put out therefrom are converted into parallel rays using a lens 8. And then, these lights are vertically radiated into two etalons 1 and 2 having different lengths, and the lights are caused to reflect and return from the reflecting faces 9 of the etalon 2 which are set to 100% reflecting positions. While resonance wavelength existing in gain distribution of the element 3 is thus oscillated in the etalons 1 and 2, as it is possible to provide the etalons 1 and 2 by keeping away from the element 3, the etalons 1 and 2 can be prevented from being influenced by the heat generating in the element 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9662079A JPS5621391A (en) | 1979-07-28 | 1979-07-28 | External resonator-equipped semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9662079A JPS5621391A (en) | 1979-07-28 | 1979-07-28 | External resonator-equipped semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5621391A true JPS5621391A (en) | 1981-02-27 |
Family
ID=14169881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9662079A Pending JPS5621391A (en) | 1979-07-28 | 1979-07-28 | External resonator-equipped semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5621391A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59500248A (en) * | 1982-02-09 | 1984-02-16 | アイ、テイ−、テイ−,インダストリ−ズ インコ−ポレ−テッド | semiconductor laser |
JPS6014258A (en) * | 1983-07-06 | 1985-01-24 | Canon Inc | Information recorder |
JPH03500353A (en) * | 1988-03-29 | 1991-01-24 | ブリテツシユ・テレコミユニケイシヨンズ・パブリツク・リミテツド・カンパニー | semiconductor device structure |
-
1979
- 1979-07-28 JP JP9662079A patent/JPS5621391A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59500248A (en) * | 1982-02-09 | 1984-02-16 | アイ、テイ−、テイ−,インダストリ−ズ インコ−ポレ−テッド | semiconductor laser |
US4583227A (en) * | 1982-02-09 | 1986-04-15 | Itt Industries, Inc. | Temperature compensating semiconductor lasers |
JPS6014258A (en) * | 1983-07-06 | 1985-01-24 | Canon Inc | Information recorder |
JPH03500353A (en) * | 1988-03-29 | 1991-01-24 | ブリテツシユ・テレコミユニケイシヨンズ・パブリツク・リミテツド・カンパニー | semiconductor device structure |
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