JPS6490583A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS6490583A JPS6490583A JP24898687A JP24898687A JPS6490583A JP S6490583 A JPS6490583 A JP S6490583A JP 24898687 A JP24898687 A JP 24898687A JP 24898687 A JP24898687 A JP 24898687A JP S6490583 A JPS6490583 A JP S6490583A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- semiconductor laser
- clad
- clad layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce the impurity concentration of a clad layer as much as possible and to decrease the optical absorption of the clad layer by providing a current injection layer between an active layer and the clad layer, and injecting a current flowing from an electrode through the implanted layer into the active layer. CONSTITUTION:A substrate 2, a first clad layer 3, an active layer 4 and a regulating layer 5 are sequentially formed on a first electrode 1, and a second electrode 7 and a second clad layer 8 are formed through a current injection layer 6 thereon. Thus, since a current supplied from externally of a semiconductor laser element to the electrode 7 is injected through the layers 6, 5 directly to the layer 4 but not injected through the layer 8, the impurity concentration of the layer 8 can be reduced as much as possible. As a result, since the optical absorption of the clad layer is reduced, a semiconductor laser having high efficiency and a small threshold value current can be realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24898687A JPS6490583A (en) | 1987-10-01 | 1987-10-01 | Semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24898687A JPS6490583A (en) | 1987-10-01 | 1987-10-01 | Semiconductor laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6490583A true JPS6490583A (en) | 1989-04-07 |
Family
ID=17186327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24898687A Pending JPS6490583A (en) | 1987-10-01 | 1987-10-01 | Semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6490583A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0330487A (en) * | 1989-06-28 | 1991-02-08 | Nec Corp | Semiconductor laser and manufacture thereof |
| JP2006041491A (en) * | 2004-06-21 | 2006-02-09 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and its manufacture |
| JP2010171183A (en) * | 2009-01-22 | 2010-08-05 | Sony Corp | Semiconductor laser element and semiconductor laser device |
| JP2014170825A (en) * | 2013-03-04 | 2014-09-18 | Sumitomo Electric Ind Ltd | Quantum cascade semiconductor laser |
| JP2017130605A (en) * | 2016-01-22 | 2017-07-27 | 日本電信電話株式会社 | Semiconductor optical device |
| JP2021153124A (en) * | 2020-03-24 | 2021-09-30 | 住友電気工業株式会社 | Quantum cascade laser |
-
1987
- 1987-10-01 JP JP24898687A patent/JPS6490583A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0330487A (en) * | 1989-06-28 | 1991-02-08 | Nec Corp | Semiconductor laser and manufacture thereof |
| JP2006041491A (en) * | 2004-06-21 | 2006-02-09 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and its manufacture |
| JP2010171183A (en) * | 2009-01-22 | 2010-08-05 | Sony Corp | Semiconductor laser element and semiconductor laser device |
| US8175128B2 (en) | 2009-01-22 | 2012-05-08 | Sony Corporation | Semiconductor laser element and semiconductor laser device |
| JP2014170825A (en) * | 2013-03-04 | 2014-09-18 | Sumitomo Electric Ind Ltd | Quantum cascade semiconductor laser |
| JP2017130605A (en) * | 2016-01-22 | 2017-07-27 | 日本電信電話株式会社 | Semiconductor optical device |
| JP2021153124A (en) * | 2020-03-24 | 2021-09-30 | 住友電気工業株式会社 | Quantum cascade laser |
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