JPS6425493A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS6425493A JPS6425493A JP18191087A JP18191087A JPS6425493A JP S6425493 A JPS6425493 A JP S6425493A JP 18191087 A JP18191087 A JP 18191087A JP 18191087 A JP18191087 A JP 18191087A JP S6425493 A JPS6425493 A JP S6425493A
- Authority
- JP
- Japan
- Prior art keywords
- region
- current
- layer
- laser oscillation
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To suppress a leakage current by so increasing the resistance of a region irrespective of a laser oscillation as to selectively apply a forward voltage to a specific region of an active layer which contributes to the laser oscillation. CONSTITUTION:In order to inject a current selectively only to a region directly above a current construction groove 3 which contributes particularly to a laser oscillation in an active layer 5, protons are, for example, implanted to a cap layer 7, a clad layer 6, an active layer 5, a lower clad layer 4 and a current block layer 2 of the region except the region directly above the groove 3 for narrowing the current to form a high resistance region 10 on the region. Thus, the effective junction area generated in the forward electric field of the layer 5 is much smaller than that of the conventional one. Accordingly, its leakage current is less, a low threshold current is obtained, and temperature characteristic and reliability are improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18191087A JPS6425493A (en) | 1987-07-21 | 1987-07-21 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18191087A JPS6425493A (en) | 1987-07-21 | 1987-07-21 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6425493A true JPS6425493A (en) | 1989-01-27 |
Family
ID=16109034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18191087A Pending JPS6425493A (en) | 1987-07-21 | 1987-07-21 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6425493A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03195734A (en) * | 1989-12-25 | 1991-08-27 | Idemitsu Petrochem Co Ltd | Production of granular polyarylenesulfide having high molecular weight |
| US7750111B2 (en) | 2005-09-22 | 2010-07-06 | Toray Industries, Inc. | Polyarylene sulfide and its production method |
-
1987
- 1987-07-21 JP JP18191087A patent/JPS6425493A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03195734A (en) * | 1989-12-25 | 1991-08-27 | Idemitsu Petrochem Co Ltd | Production of granular polyarylenesulfide having high molecular weight |
| US7750111B2 (en) | 2005-09-22 | 2010-07-06 | Toray Industries, Inc. | Polyarylene sulfide and its production method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SE8107136L (en) | STEERING ELECTRICAL EQUIPMENT | |
| ES8104686A1 (en) | Optically triggered linear bilateral switch. | |
| JPS5286093A (en) | Striped semiconductor laser | |
| JPS6425493A (en) | Semiconductor laser device | |
| FR2393433A1 (en) | Controllable power semiconductor component - has control electrodes produced in recesses of main electrodes directly on both sides of chip | |
| JPS6490583A (en) | Semiconductor laser element | |
| JPS566480A (en) | Semiconductor light emitting diode | |
| SE7905052L (en) | POWER TURISTOR, PROCEDURE FOR ITS MANUFACTURE AND USE OF SUCH TYRISTORS IN CONNECTOR CONNECTIONS | |
| EP0182571A3 (en) | Semiconductor switching device | |
| JPS648691A (en) | Integrated semiconductor laser element | |
| JPS5522844A (en) | Semiconductor laser | |
| JPS5397360A (en) | Gate control system for gate turn-off thyristor | |
| JPS56110288A (en) | Semiconductor laser element | |
| JPS5421286A (en) | Reverse conductor thyristor | |
| JPS5637676A (en) | Field effect type semiconductor switching device | |
| JPS5550740A (en) | Semiconductor switch | |
| JPS5518078A (en) | Semiconductor light emission device | |
| JPS5681970A (en) | Semiconductor switching device | |
| JPS647447A (en) | Current limiting device | |
| JPS5265692A (en) | Double hetero junction laser | |
| JPS5732692A (en) | Semiconductor laser device | |
| JPS55109033A (en) | Interface circuit | |
| JPS5646337A (en) | Semiconductor switch | |
| JPS6486586A (en) | Semiconductor laser element | |
| JPS53118984A (en) | Semiconductor switch |