JPS6486586A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS6486586A JPS6486586A JP24498187A JP24498187A JPS6486586A JP S6486586 A JPS6486586 A JP S6486586A JP 24498187 A JP24498187 A JP 24498187A JP 24498187 A JP24498187 A JP 24498187A JP S6486586 A JPS6486586 A JP S6486586A
- Authority
- JP
- Japan
- Prior art keywords
- active layers
- semiconductor laser
- laser element
- comb
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain efficiently a laser beam of high output by forming a boundary of domains of different conductivity types in a comb shape. CONSTITUTION:The p-n interface of a formed semiconductor laser element is of a comb-shape, in which only the part having active layers 3, 5, 7 is formed in a double heterojunction structure 20. The forbidden band width of the active layers 3, 5, 7 are selected smaller as compared with the case of clad layers 2, 4, 6, 8, 9, 10 which surround the active layers, hence the rising voltage in the p-n interface becomes lower only in the double heterojunction 20 when a voltage is applied on both electrodes, the current runs selectively in the heterojunction 20. Thus a carrier is introduced from p-side and n-side into the active layers 3, 5, 7 to be recombined, and light emittance is done effectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62244981A JPH0695587B2 (en) | 1987-09-28 | 1987-09-28 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62244981A JPH0695587B2 (en) | 1987-09-28 | 1987-09-28 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6486586A true JPS6486586A (en) | 1989-03-31 |
JPH0695587B2 JPH0695587B2 (en) | 1994-11-24 |
Family
ID=17126819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62244981A Expired - Lifetime JPH0695587B2 (en) | 1987-09-28 | 1987-09-28 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0695587B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6495587B2 (en) * | 2014-07-02 | 2019-04-03 | 浜松ホトニクス株式会社 | Semiconductor laser element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59152683A (en) * | 1983-02-21 | 1984-08-31 | Nec Corp | Surface light emitting semiconductor laser |
-
1987
- 1987-09-28 JP JP62244981A patent/JPH0695587B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59152683A (en) * | 1983-02-21 | 1984-08-31 | Nec Corp | Surface light emitting semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
JPH0695587B2 (en) | 1994-11-24 |
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