JPS6486586A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS6486586A
JPS6486586A JP24498187A JP24498187A JPS6486586A JP S6486586 A JPS6486586 A JP S6486586A JP 24498187 A JP24498187 A JP 24498187A JP 24498187 A JP24498187 A JP 24498187A JP S6486586 A JPS6486586 A JP S6486586A
Authority
JP
Japan
Prior art keywords
active layers
semiconductor laser
laser element
comb
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24498187A
Other languages
Japanese (ja)
Other versions
JPH0695587B2 (en
Inventor
Mototaka Tanetani
Akihiro Matsumoto
Hiroyuki Hosobane
Kaneki Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62244981A priority Critical patent/JPH0695587B2/en
Publication of JPS6486586A publication Critical patent/JPS6486586A/en
Publication of JPH0695587B2 publication Critical patent/JPH0695587B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain efficiently a laser beam of high output by forming a boundary of domains of different conductivity types in a comb shape. CONSTITUTION:The p-n interface of a formed semiconductor laser element is of a comb-shape, in which only the part having active layers 3, 5, 7 is formed in a double heterojunction structure 20. The forbidden band width of the active layers 3, 5, 7 are selected smaller as compared with the case of clad layers 2, 4, 6, 8, 9, 10 which surround the active layers, hence the rising voltage in the p-n interface becomes lower only in the double heterojunction 20 when a voltage is applied on both electrodes, the current runs selectively in the heterojunction 20. Thus a carrier is introduced from p-side and n-side into the active layers 3, 5, 7 to be recombined, and light emittance is done effectively.
JP62244981A 1987-09-28 1987-09-28 Semiconductor laser device Expired - Lifetime JPH0695587B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62244981A JPH0695587B2 (en) 1987-09-28 1987-09-28 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62244981A JPH0695587B2 (en) 1987-09-28 1987-09-28 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS6486586A true JPS6486586A (en) 1989-03-31
JPH0695587B2 JPH0695587B2 (en) 1994-11-24

Family

ID=17126819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62244981A Expired - Lifetime JPH0695587B2 (en) 1987-09-28 1987-09-28 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPH0695587B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6495587B2 (en) * 2014-07-02 2019-04-03 浜松ホトニクス株式会社 Semiconductor laser element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152683A (en) * 1983-02-21 1984-08-31 Nec Corp Surface light emitting semiconductor laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152683A (en) * 1983-02-21 1984-08-31 Nec Corp Surface light emitting semiconductor laser

Also Published As

Publication number Publication date
JPH0695587B2 (en) 1994-11-24

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