JPS642378A - Edge emission type light-emitting diode - Google Patents

Edge emission type light-emitting diode

Info

Publication number
JPS642378A
JPS642378A JP15809587A JP15809587A JPS642378A JP S642378 A JPS642378 A JP S642378A JP 15809587 A JP15809587 A JP 15809587A JP 15809587 A JP15809587 A JP 15809587A JP S642378 A JPS642378 A JP S642378A
Authority
JP
Japan
Prior art keywords
electrode
currents
layer
active layer
emission type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15809587A
Other languages
Japanese (ja)
Other versions
JPH012378A (en
Inventor
Junji Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP15809587A priority Critical patent/JPS642378A/en
Publication of JPH012378A publication Critical patent/JPH012378A/en
Publication of JPS642378A publication Critical patent/JPS642378A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To obtain an edge emission type light-emitting diode having the excellent temperature characteristics of an optical output by forming an electrode for pulse currents and an electrode for DCs shaped onto a semi conductor layer including an active layer and an injection region and a non-injection region of currents from these electrodes to the active layer.
CONSTITUTION: An N-InP buffer 2, an InGaAsP active layer 3, a P-InP clad 4 and an N-InGaAsP contact 5 are superposed onto N-InP 1, and a P layer 7 reaching the clad 4 is diffused, using an insulating layer 6 as a mask. An electrode 8 for pulses and an electrode 7 for DCs are shaped onto the N layer 5 in order near to the outgoing face of beams, and a section in which there is no electrode on the rear end face side is used as a current non-injection region. An electrode 10 is attached to a substrate 1. An electrode 9 forming section is employed as the absorption region of beams from the active layer, to which pulse currents are injected, when currents are not flowed, and an optical output can be increased or decreased by varying DC currents as pulse currents are left as they are kept constant. Accordingly, an edge emission type LED having the improved temperature characteristics of the optical output is acquired.
COPYRIGHT: (C)1989,JPO&Japio
JP15809587A 1987-06-24 1987-06-24 Edge emission type light-emitting diode Pending JPS642378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15809587A JPS642378A (en) 1987-06-24 1987-06-24 Edge emission type light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15809587A JPS642378A (en) 1987-06-24 1987-06-24 Edge emission type light-emitting diode

Publications (2)

Publication Number Publication Date
JPH012378A JPH012378A (en) 1989-01-06
JPS642378A true JPS642378A (en) 1989-01-06

Family

ID=15664193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15809587A Pending JPS642378A (en) 1987-06-24 1987-06-24 Edge emission type light-emitting diode

Country Status (1)

Country Link
JP (1) JPS642378A (en)

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