JPS6432693A - Semiconductor optical functional light-emitting element - Google Patents

Semiconductor optical functional light-emitting element

Info

Publication number
JPS6432693A
JPS6432693A JP18984087A JP18984087A JPS6432693A JP S6432693 A JPS6432693 A JP S6432693A JP 18984087 A JP18984087 A JP 18984087A JP 18984087 A JP18984087 A JP 18984087A JP S6432693 A JPS6432693 A JP S6432693A
Authority
JP
Japan
Prior art keywords
layer
clad layer
active layer
optical absorption
wavelength shorter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18984087A
Other languages
Japanese (ja)
Other versions
JPH06103774B2 (en
Inventor
Susumu Asata
Noriaki Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18984087A priority Critical patent/JPH06103774B2/en
Publication of JPS6432693A publication Critical patent/JPS6432693A/en
Publication of JPH06103774B2 publication Critical patent/JPH06103774B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To enable an optical output having a wavelength shorter than an input wavelength by realizing light emission having a wavelength shorter than conventional devices by forming an active layer in specific superlattice structure and shaping an optical absorption section to a clad layer. CONSTITUTION:An N-type AlGaAs clad layer 13, an active layer 14 formed by alternately laminating AlAs diatomic layers and one layer or more of AlAs diatomic layers, a P-type AlGaAs clad layer 15, a current blocking layer 16, and electrodes 10, 17 are shaped onto an N-type GaAs substrate 11. The clad layer 13 includes an AlGaAs optical absorption layer 12 having forbidden band width narrower than an adjacent section on the substrate side. Since the active layer is formed in superlattice structure, direct transition emission is enabled even when a mean Al composition ratio is made higher than conventional devices (0.45), thus manufacturing a short-wave length light-emitting element. The potential barrier of the clad layer 13 is lowered by carriers generated in the optical absorption layer 12 by input beams 18, and the currents of the active layer are increased and laser oscillation is generated, thus also acquiring output beams 19 having a wavelength shorter than input beams 18.
JP18984087A 1987-07-28 1987-07-28 Semiconductor optical functional light emitting device Expired - Lifetime JPH06103774B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18984087A JPH06103774B2 (en) 1987-07-28 1987-07-28 Semiconductor optical functional light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18984087A JPH06103774B2 (en) 1987-07-28 1987-07-28 Semiconductor optical functional light emitting device

Publications (2)

Publication Number Publication Date
JPS6432693A true JPS6432693A (en) 1989-02-02
JPH06103774B2 JPH06103774B2 (en) 1994-12-14

Family

ID=16248084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18984087A Expired - Lifetime JPH06103774B2 (en) 1987-07-28 1987-07-28 Semiconductor optical functional light emitting device

Country Status (1)

Country Link
JP (1) JPH06103774B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198112B1 (en) 1994-03-23 2001-03-06 Sharp Kabushiki Kaisha III-V compound semiconductor luminescent device
JP2007208062A (en) * 2006-02-02 2007-08-16 Sumitomo Electric Ind Ltd Semiconductor laser element
JP2015153892A (en) * 2014-02-14 2015-08-24 国立研究開発法人物質・材料研究機構 Quantum well solar battery

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198112B1 (en) 1994-03-23 2001-03-06 Sharp Kabushiki Kaisha III-V compound semiconductor luminescent device
JP2007208062A (en) * 2006-02-02 2007-08-16 Sumitomo Electric Ind Ltd Semiconductor laser element
JP2015153892A (en) * 2014-02-14 2015-08-24 国立研究開発法人物質・材料研究機構 Quantum well solar battery

Also Published As

Publication number Publication date
JPH06103774B2 (en) 1994-12-14

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