JPS6453485A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS6453485A JPS6453485A JP20939687A JP20939687A JPS6453485A JP S6453485 A JPS6453485 A JP S6453485A JP 20939687 A JP20939687 A JP 20939687A JP 20939687 A JP20939687 A JP 20939687A JP S6453485 A JPS6453485 A JP S6453485A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- optical waveguide
- type
- region
- waveguide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To diffuse impurity in a specified region of an optical waveguide layer with good controllability and to acquire a semiconductor of an optimum devices structure by forming and then heat-treating an impurity diffusion source on the optical waveguide layer of superlattice structure. CONSTITUTION:An n-type clad layer 2, an active layer 3, a p-type optical waveguide layer 4 and a p-type superlattice optical waveguide layer 5 are formed on a substrate 1 one by one. Then an Si3N4 film 6 is formed onto the waveguide layer 5 of p-type superlattice and patterning is conducted at specified width and pitch. In the stripe region, a GaAs layer 7 which is Si-doped to high density is grown selectively and an Si3N4 film 8 is grown on the GaAs layer 7 and the Si3N4 film 6. Then heat treatment is conducted using Si as a cap allowing Si to diffuse from the GaAs layer 7 to a region (a region not covered with the Si3N4 film 6) excepting the stripe region of the optical waveguide layer 5. A superlattice disordered n-type AlyGa1-yAs layer 5A is thereby formed and refraction factor waveguide mechanism and current constriction mechanism in this case are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20939687A JPS6453485A (en) | 1987-08-25 | 1987-08-25 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20939687A JPS6453485A (en) | 1987-08-25 | 1987-08-25 | Manufacture of semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6453485A true JPS6453485A (en) | 1989-03-01 |
Family
ID=16572205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20939687A Pending JPS6453485A (en) | 1987-08-25 | 1987-08-25 | Manufacture of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6453485A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5255278A (en) * | 1991-07-10 | 1993-10-19 | Nec Corporation | Semiconductor laser with vertical resonator |
US7335256B2 (en) | 2002-12-19 | 2008-02-26 | Siltronic Ag | Silicon single crystal, and process for producing it |
-
1987
- 1987-08-25 JP JP20939687A patent/JPS6453485A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5255278A (en) * | 1991-07-10 | 1993-10-19 | Nec Corporation | Semiconductor laser with vertical resonator |
US7335256B2 (en) | 2002-12-19 | 2008-02-26 | Siltronic Ag | Silicon single crystal, and process for producing it |
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