JPS55123190A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS55123190A
JPS55123190A JP3135679A JP3135679A JPS55123190A JP S55123190 A JPS55123190 A JP S55123190A JP 3135679 A JP3135679 A JP 3135679A JP 3135679 A JP3135679 A JP 3135679A JP S55123190 A JPS55123190 A JP S55123190A
Authority
JP
Japan
Prior art keywords
layer
type
light emitting
region
clad layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3135679A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Yano
Hiroshi Nishi
Kimito Takusagawa
Yorimitsu Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3135679A priority Critical patent/JPS55123190A/en
Priority to EP80300353A priority patent/EP0014588B1/en
Priority to DE8080300353T priority patent/DE3065856D1/en
Priority to US06/120,095 priority patent/US4329660A/en
Priority to CA000345585A priority patent/CA1149498A/en
Publication of JPS55123190A publication Critical patent/JPS55123190A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To lengthen the lifetime of a laser device by a method wherein, on both sides of a semiconductor layer having a light emitting region, No.2 and No.3 semiconductor layers having a larger forbidden band and a smaller refraction coefficient than this are provided and thereby a double-hetero structure is formed. CONSTITUTION:An n-type InP No.1 clad layer 22, In1-XGaXAsYP1-Y active layer 23, a p-type InP No.2 clad layer 24 are laminated and grown on an n-type InP substrate 21. Next, at an interval in the layer 24 and opposit is, an n-type InGaAsP region 25 is formed by selective diffusion. On the layer 24 including this, a Ti-Pt-Au positive electrode 27 is fitted via a p-type InGaAsP ohmic contact layer 26. On the back of the substrate 21 is fitted an Au-Ge-Ni alloy electrode 28, and thereby a light emitting device is constructed. In this way, since the n-type region 25 is buried in the p-type clad layer 24, the concentration of the electromagnetic field on the surface of the resonator and its neighborhood is made slow, and there is no increase in Joule heat due to the concentration of drive current, so that the lifetime is lengthened.
JP3135679A 1979-02-13 1979-03-16 Semiconductor light emitting device Pending JPS55123190A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3135679A JPS55123190A (en) 1979-03-16 1979-03-16 Semiconductor light emitting device
EP80300353A EP0014588B1 (en) 1979-02-13 1980-02-06 A semiconductor light emitting device
DE8080300353T DE3065856D1 (en) 1979-02-13 1980-02-06 A semiconductor light emitting device
US06/120,095 US4329660A (en) 1979-02-13 1980-02-11 Semiconductor light emitting device
CA000345585A CA1149498A (en) 1979-02-13 1980-02-13 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3135679A JPS55123190A (en) 1979-03-16 1979-03-16 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS55123190A true JPS55123190A (en) 1980-09-22

Family

ID=12328944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3135679A Pending JPS55123190A (en) 1979-02-13 1979-03-16 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS55123190A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362292A (en) * 1986-09-02 1988-03-18 Mitsubishi Electric Corp Semiconductor laser device and manufacture thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (en) * 1973-01-11 1974-09-06
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS5228281A (en) * 1975-08-28 1977-03-03 Fujitsu Ltd Light emitting semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (en) * 1973-01-11 1974-09-06
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS5228281A (en) * 1975-08-28 1977-03-03 Fujitsu Ltd Light emitting semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362292A (en) * 1986-09-02 1988-03-18 Mitsubishi Electric Corp Semiconductor laser device and manufacture thereof

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