JPS55127015A - Photo semiconductor device - Google Patents
Photo semiconductor deviceInfo
- Publication number
- JPS55127015A JPS55127015A JP3531479A JP3531479A JPS55127015A JP S55127015 A JPS55127015 A JP S55127015A JP 3531479 A JP3531479 A JP 3531479A JP 3531479 A JP3531479 A JP 3531479A JP S55127015 A JPS55127015 A JP S55127015A
- Authority
- JP
- Japan
- Prior art keywords
- type
- electrode
- layer
- impurities
- reduce
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To improve the light emitting efficiency and reduce the ohmic resistance of p-type electrode by using Cd as impurity for a p-type InP clad layer and Zn as impurity for a p-type InGaAsP electrode contact layer.
CONSTITUTION: For LEDs of semiconductor lasers, formed on an n-type P substrate 1 are an undoped n-type InGaAsP active layer 2, a p-type InP clad layer 3' and a p-type InGaAsP electrode contact layer 4. In this occasion, to reduce the diffusion of impurities into the layer 2 and to form an electrode with low ohmic contact resistance through the selective combination of impurities in the layers 3' and 4, Cd and Zn are used as impurities for the layers 3' and 4, respectively. By so doing, it becomes possible to improve the light emitting efficiency and reduce the ohmic resistance of the p-type electrode.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54035314A JPS6052577B2 (en) | 1979-03-26 | 1979-03-26 | Optical semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54035314A JPS6052577B2 (en) | 1979-03-26 | 1979-03-26 | Optical semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55127015A true JPS55127015A (en) | 1980-10-01 |
JPS6052577B2 JPS6052577B2 (en) | 1985-11-20 |
Family
ID=12438337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54035314A Expired JPS6052577B2 (en) | 1979-03-26 | 1979-03-26 | Optical semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6052577B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2637743A1 (en) * | 1988-10-06 | 1990-04-13 | France Etat | Semiconductor laser with blocking layer and buried stripe and process for manufacturing this laser |
-
1979
- 1979-03-26 JP JP54035314A patent/JPS6052577B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2637743A1 (en) * | 1988-10-06 | 1990-04-13 | France Etat | Semiconductor laser with blocking layer and buried stripe and process for manufacturing this laser |
Also Published As
Publication number | Publication date |
---|---|
JPS6052577B2 (en) | 1985-11-20 |
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