JPS55127015A - Photo semiconductor device - Google Patents

Photo semiconductor device

Info

Publication number
JPS55127015A
JPS55127015A JP3531479A JP3531479A JPS55127015A JP S55127015 A JPS55127015 A JP S55127015A JP 3531479 A JP3531479 A JP 3531479A JP 3531479 A JP3531479 A JP 3531479A JP S55127015 A JPS55127015 A JP S55127015A
Authority
JP
Japan
Prior art keywords
type
electrode
layer
impurities
reduce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3531479A
Other languages
Japanese (ja)
Other versions
JPS6052577B2 (en
Inventor
Kenzo Akita
Toshihiro Kusuki
Yorimitsu Nishitani
Hiroshi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54035314A priority Critical patent/JPS6052577B2/en
Publication of JPS55127015A publication Critical patent/JPS55127015A/en
Publication of JPS6052577B2 publication Critical patent/JPS6052577B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To improve the light emitting efficiency and reduce the ohmic resistance of p-type electrode by using Cd as impurity for a p-type InP clad layer and Zn as impurity for a p-type InGaAsP electrode contact layer.
CONSTITUTION: For LEDs of semiconductor lasers, formed on an n-type P substrate 1 are an undoped n-type InGaAsP active layer 2, a p-type InP clad layer 3' and a p-type InGaAsP electrode contact layer 4. In this occasion, to reduce the diffusion of impurities into the layer 2 and to form an electrode with low ohmic contact resistance through the selective combination of impurities in the layers 3' and 4, Cd and Zn are used as impurities for the layers 3' and 4, respectively. By so doing, it becomes possible to improve the light emitting efficiency and reduce the ohmic resistance of the p-type electrode.
COPYRIGHT: (C)1980,JPO&Japio
JP54035314A 1979-03-26 1979-03-26 Optical semiconductor device Expired JPS6052577B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54035314A JPS6052577B2 (en) 1979-03-26 1979-03-26 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54035314A JPS6052577B2 (en) 1979-03-26 1979-03-26 Optical semiconductor device

Publications (2)

Publication Number Publication Date
JPS55127015A true JPS55127015A (en) 1980-10-01
JPS6052577B2 JPS6052577B2 (en) 1985-11-20

Family

ID=12438337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54035314A Expired JPS6052577B2 (en) 1979-03-26 1979-03-26 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS6052577B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2637743A1 (en) * 1988-10-06 1990-04-13 France Etat Semiconductor laser with blocking layer and buried stripe and process for manufacturing this laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2637743A1 (en) * 1988-10-06 1990-04-13 France Etat Semiconductor laser with blocking layer and buried stripe and process for manufacturing this laser

Also Published As

Publication number Publication date
JPS6052577B2 (en) 1985-11-20

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