JPS55103778A - Light-emitting diode - Google Patents
Light-emitting diodeInfo
- Publication number
- JPS55103778A JPS55103778A JP1100479A JP1100479A JPS55103778A JP S55103778 A JPS55103778 A JP S55103778A JP 1100479 A JP1100479 A JP 1100479A JP 1100479 A JP1100479 A JP 1100479A JP S55103778 A JPS55103778 A JP S55103778A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- led
- substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To improve the coupling efficiency for LED and fiber by providing a current concentrating mechanisms at the upper and lower sides of a light-emitting layer, in a light-emitting diode suitably used in optical fiber communication.
CONSTITUTION: The LED consists of metal electrode layer 1, n-type GaAs substrate 2, n-type GaAlAs layer 3, p-type GaAs layer 4, p-type GaAlAs layer 5, n-type GaAlAs layer 6, p-type GaAlAs layer 7, and metal electrode layer 9 having opening 8. P-type GaAs layer 10 is buried between n-type GaAs substrate 2 and n-type GaAlAs layer 3, excluding the part immediately below opening 8. When voltage is impressed on a LED of this structure, reverse biasing takes place not only between layer 5 and layer 6 but also between layer 10 and layer 2. As a result, with its path choked in circular form, current flows into layer 5. When it passes through layer 4, it slightly expands, but it is choked again and flows into substrate 2. Consequently, most of the current flowing to the LED chip concentrates immediately below opening 8 flowing toward substrate 2, so that the coupling efficiency is improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1100479A JPS55103778A (en) | 1979-02-01 | 1979-02-01 | Light-emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1100479A JPS55103778A (en) | 1979-02-01 | 1979-02-01 | Light-emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55103778A true JPS55103778A (en) | 1980-08-08 |
Family
ID=11765969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1100479A Pending JPS55103778A (en) | 1979-02-01 | 1979-02-01 | Light-emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55103778A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5923575A (en) * | 1982-07-30 | 1984-02-07 | Fujitsu Ltd | Semiconductor light emtting device |
US5517039A (en) * | 1994-11-14 | 1996-05-14 | Hewlett-Packard Company | Semiconductor devices fabricated with passivated high aluminum-content III-V material |
-
1979
- 1979-02-01 JP JP1100479A patent/JPS55103778A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5923575A (en) * | 1982-07-30 | 1984-02-07 | Fujitsu Ltd | Semiconductor light emtting device |
US5517039A (en) * | 1994-11-14 | 1996-05-14 | Hewlett-Packard Company | Semiconductor devices fabricated with passivated high aluminum-content III-V material |
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