JPS55103778A - Light-emitting diode - Google Patents

Light-emitting diode

Info

Publication number
JPS55103778A
JPS55103778A JP1100479A JP1100479A JPS55103778A JP S55103778 A JPS55103778 A JP S55103778A JP 1100479 A JP1100479 A JP 1100479A JP 1100479 A JP1100479 A JP 1100479A JP S55103778 A JPS55103778 A JP S55103778A
Authority
JP
Japan
Prior art keywords
layer
type
led
substrate
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1100479A
Other languages
Japanese (ja)
Inventor
Hiroshi Matsubara
Shigeki Horiuchi
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1100479A priority Critical patent/JPS55103778A/en
Publication of JPS55103778A publication Critical patent/JPS55103778A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To improve the coupling efficiency for LED and fiber by providing a current concentrating mechanisms at the upper and lower sides of a light-emitting layer, in a light-emitting diode suitably used in optical fiber communication.
CONSTITUTION: The LED consists of metal electrode layer 1, n-type GaAs substrate 2, n-type GaAlAs layer 3, p-type GaAs layer 4, p-type GaAlAs layer 5, n-type GaAlAs layer 6, p-type GaAlAs layer 7, and metal electrode layer 9 having opening 8. P-type GaAs layer 10 is buried between n-type GaAs substrate 2 and n-type GaAlAs layer 3, excluding the part immediately below opening 8. When voltage is impressed on a LED of this structure, reverse biasing takes place not only between layer 5 and layer 6 but also between layer 10 and layer 2. As a result, with its path choked in circular form, current flows into layer 5. When it passes through layer 4, it slightly expands, but it is choked again and flows into substrate 2. Consequently, most of the current flowing to the LED chip concentrates immediately below opening 8 flowing toward substrate 2, so that the coupling efficiency is improved.
COPYRIGHT: (C)1980,JPO&Japio
JP1100479A 1979-02-01 1979-02-01 Light-emitting diode Pending JPS55103778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1100479A JPS55103778A (en) 1979-02-01 1979-02-01 Light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1100479A JPS55103778A (en) 1979-02-01 1979-02-01 Light-emitting diode

Publications (1)

Publication Number Publication Date
JPS55103778A true JPS55103778A (en) 1980-08-08

Family

ID=11765969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1100479A Pending JPS55103778A (en) 1979-02-01 1979-02-01 Light-emitting diode

Country Status (1)

Country Link
JP (1) JPS55103778A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923575A (en) * 1982-07-30 1984-02-07 Fujitsu Ltd Semiconductor light emtting device
US5517039A (en) * 1994-11-14 1996-05-14 Hewlett-Packard Company Semiconductor devices fabricated with passivated high aluminum-content III-V material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923575A (en) * 1982-07-30 1984-02-07 Fujitsu Ltd Semiconductor light emtting device
US5517039A (en) * 1994-11-14 1996-05-14 Hewlett-Packard Company Semiconductor devices fabricated with passivated high aluminum-content III-V material

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