JPS572566A - Reverse conductive transistor - Google Patents

Reverse conductive transistor

Info

Publication number
JPS572566A
JPS572566A JP7632680A JP7632680A JPS572566A JP S572566 A JPS572566 A JP S572566A JP 7632680 A JP7632680 A JP 7632680A JP 7632680 A JP7632680 A JP 7632680A JP S572566 A JPS572566 A JP S572566A
Authority
JP
Japan
Prior art keywords
region
emitter
type
conductive type
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7632680A
Other languages
Japanese (ja)
Other versions
JPS629230B2 (en
Inventor
Yoshihito Amamiya
Nobuhiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7632680A priority Critical patent/JPS572566A/en
Publication of JPS572566A publication Critical patent/JPS572566A/en
Publication of JPS629230B2 publication Critical patent/JPS629230B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To shorten the reverse recovery time of parallel diodes by isolating a transistor from high speed diodes and monolithically forming it. CONSTITUTION:Two reversely conductive type (p) regions 13, 13' are formed in the prescribed region of (-) conductive type (e.g., n<->type) semiconductor, and an emitter region 14 is formed in the region 13. The same conductive type(n<+>type) electron absorption region 14' as the emitter and isolated from the emitter retion 14 is formed in the second region 13'. Then, the region 13' is connected to the region 14. When the reversely conductive transistor is thus constructed, the region 14' absorbs the electrons injected to the region 13', thereby smoothening the flow of the electrons. Consequently, when a freewheeling diode is conducted, the electron amount stored in the high resistivity semiconductor substrate 12 directly under the region 13' are reduced, thereby improving the reverse recovery speed.
JP7632680A 1980-06-06 1980-06-06 Reverse conductive transistor Granted JPS572566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7632680A JPS572566A (en) 1980-06-06 1980-06-06 Reverse conductive transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7632680A JPS572566A (en) 1980-06-06 1980-06-06 Reverse conductive transistor

Publications (2)

Publication Number Publication Date
JPS572566A true JPS572566A (en) 1982-01-07
JPS629230B2 JPS629230B2 (en) 1987-02-27

Family

ID=13602229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7632680A Granted JPS572566A (en) 1980-06-06 1980-06-06 Reverse conductive transistor

Country Status (1)

Country Link
JP (1) JPS572566A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8648385B2 (en) 2010-11-25 2014-02-11 Denso Corporation Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034312A (en) * 2008-07-29 2010-02-12 Rohm Co Ltd Semiconductor device and manufacturing method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8648385B2 (en) 2010-11-25 2014-02-11 Denso Corporation Semiconductor device

Also Published As

Publication number Publication date
JPS629230B2 (en) 1987-02-27

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