JPS5796585A - Manufacture of semiconductor light emitting element - Google Patents

Manufacture of semiconductor light emitting element

Info

Publication number
JPS5796585A
JPS5796585A JP17353680A JP17353680A JPS5796585A JP S5796585 A JPS5796585 A JP S5796585A JP 17353680 A JP17353680 A JP 17353680A JP 17353680 A JP17353680 A JP 17353680A JP S5796585 A JPS5796585 A JP S5796585A
Authority
JP
Japan
Prior art keywords
layer
type
type inp
diffusion
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17353680A
Other languages
Japanese (ja)
Inventor
Tsunao Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17353680A priority Critical patent/JPS5796585A/en
Publication of JPS5796585A publication Critical patent/JPS5796585A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To eliminate the need for selective diffusion by forming a P-type layer having high impurity concentration into an N-type buried layer and inverting a conductive type of one part of the buried layer through the diffusion of impurities by heat treatment. CONSTITUTION:An N-type InP layer 13, an undoped In0.65Ga0.35As0.78P0.22 active layer 14, a P-type In0.82Ga0.18As0.42P0.52 layer 15 and a P-type InP layer 16 are grown successively onto an N-type InP substrate 12. A striped SiO2 film 23 is formed, and the layers 15, 16 are etched using the film 23 as a mask. The SiO2 film 23 is removed, and the N-type InP layer 17, the P<+> type InP layer 18 to which Zn is doped, and the N-type InP layer 19 are grown in order. The conductive type of a section corresponding to an upper section of a mesa- shaped section of the InP layers 17, 19 is inverted through the diffusion of impurities by heat treatment at that time.
JP17353680A 1980-12-09 1980-12-09 Manufacture of semiconductor light emitting element Pending JPS5796585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17353680A JPS5796585A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17353680A JPS5796585A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS5796585A true JPS5796585A (en) 1982-06-15

Family

ID=15962343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17353680A Pending JPS5796585A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS5796585A (en)

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