JPS57128989A - Manufacture of semiconductor light emitting element - Google Patents

Manufacture of semiconductor light emitting element

Info

Publication number
JPS57128989A
JPS57128989A JP1414581A JP1414581A JPS57128989A JP S57128989 A JPS57128989 A JP S57128989A JP 1414581 A JP1414581 A JP 1414581A JP 1414581 A JP1414581 A JP 1414581A JP S57128989 A JPS57128989 A JP S57128989A
Authority
JP
Japan
Prior art keywords
type
inp layer
type inp
layer
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1414581A
Other languages
Japanese (ja)
Inventor
Toshio Uji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1414581A priority Critical patent/JPS57128989A/en
Publication of JPS57128989A publication Critical patent/JPS57128989A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To manufacture the internal narrow type element easily by selectively diffusing or ion-implanting an impurity having the second condution type from the surface of the second semicondutor layer in an epitaxial wafer. CONSTITUTION:A P type InP layer 22, an N type or P type InGaAsP layer 23, an N type InP layer 24 and an N type InP layer 25 having high concentration are formed successively onto a P type InP substrate 21. One part of the surface of the N type InP layer 25 is masked in a striped shape with an insulating film of SiO2, etc., and the surface of the N type InP layer 25 is etched. The P type impurity such as Cd or Zn or the like is diffused, and P type regions 26 through diffusion are shaped to one parts of the N type InP layer 24. The diffusion mask is removed, and an N type ohmic electrode metallic film 27 is formed to the surface of the N type InP layer 25. Lastly, a P type ohmic electrode metallic film 28 is shaped.
JP1414581A 1981-02-02 1981-02-02 Manufacture of semiconductor light emitting element Pending JPS57128989A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1414581A JPS57128989A (en) 1981-02-02 1981-02-02 Manufacture of semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1414581A JPS57128989A (en) 1981-02-02 1981-02-02 Manufacture of semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS57128989A true JPS57128989A (en) 1982-08-10

Family

ID=11852978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1414581A Pending JPS57128989A (en) 1981-02-02 1981-02-02 Manufacture of semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS57128989A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030746A1 (en) * 2004-09-13 2006-03-23 The University Of Tokyo Semiconductor light-emitting element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5099285A (en) * 1973-12-28 1975-08-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5099285A (en) * 1973-12-28 1975-08-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030746A1 (en) * 2004-09-13 2006-03-23 The University Of Tokyo Semiconductor light-emitting element

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