JPS57172762A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57172762A JPS57172762A JP5830181A JP5830181A JPS57172762A JP S57172762 A JPS57172762 A JP S57172762A JP 5830181 A JP5830181 A JP 5830181A JP 5830181 A JP5830181 A JP 5830181A JP S57172762 A JPS57172762 A JP S57172762A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- type
- concave part
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain the device whose area is small and narrow and diffusing depth is very shallow, by forming a reverse conductive type region on a conductive region which is exposed in a hole provided in a diffused mask comprising an insulating film, with the relationship being provided so that the end of a P-N junction is located on the surface of the conductive region, and providing an electrode through a non-single crystal layer. CONSTITUTION:A P type base region 8 is diffused and formed in the surface layer part of an N type Si substrate 9 which is to become a collector region. An SiO2 film 10 is deposited on the entire surface including the region 8. A photoresist film 14 having a window corresponding to the central part of the region 8 is used as a mask, and a window 15 is provided in the film 10. Then, a concave part 16 is formed in the region 8 exposed in the window 8 by the etching. The film 14 is removed and a non-single crystal layer 11 is deposited on the entire surface. N type impurity ions are implanted from the vertical direction, and the conductive property is imparted to the part other than side walls 111 of the concave part 16. Thus the area at the bottom of the concave part 16 is reduced. Then heat treatment is performed and the impurities are diffused from the non-single crystal layer 11 at the bottom of the concave part 16, and an N type emitter region 7 is formed in the region 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5830181A JPS57172762A (en) | 1981-04-16 | 1981-04-16 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5830181A JPS57172762A (en) | 1981-04-16 | 1981-04-16 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57172762A true JPS57172762A (en) | 1982-10-23 |
Family
ID=13080390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5830181A Pending JPS57172762A (en) | 1981-04-16 | 1981-04-16 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57172762A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940860A (en) * | 1972-08-25 | 1974-04-17 | ||
| JPS5341186A (en) * | 1976-09-28 | 1978-04-14 | Nec Corp | Manufacture of semiconductor device |
-
1981
- 1981-04-16 JP JP5830181A patent/JPS57172762A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940860A (en) * | 1972-08-25 | 1974-04-17 | ||
| JPS5341186A (en) * | 1976-09-28 | 1978-04-14 | Nec Corp | Manufacture of semiconductor device |
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