JPS5550740A - Semiconductor switch - Google Patents

Semiconductor switch

Info

Publication number
JPS5550740A
JPS5550740A JP12258678A JP12258678A JPS5550740A JP S5550740 A JPS5550740 A JP S5550740A JP 12258678 A JP12258678 A JP 12258678A JP 12258678 A JP12258678 A JP 12258678A JP S5550740 A JPS5550740 A JP S5550740A
Authority
JP
Japan
Prior art keywords
resistor
increased
semiconductor switch
cathode
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12258678A
Other languages
Japanese (ja)
Other versions
JPS6043692B2 (en
Inventor
Mitsuo Matsuyama
Shinji Okuhara
Ichiro Ohigata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12258678A priority Critical patent/JPS6043692B2/en
Publication of JPS5550740A publication Critical patent/JPS5550740A/en
Publication of JPS6043692B2 publication Critical patent/JPS6043692B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage

Landscapes

  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To enable to increase dv/dt rating and gate trigger sensitivity even at high temperature, by providing the semiconductor switch of PNPN constitution, resistor, electric short circuit means and capacitive circuit. CONSTITUTION:The resistor R2 is connected to the cathode K1 being one major terminal of the semiconductor switch (PNPN) 1, to build up a new cathode K2, and the resistor R1 being the short circuit means is connected between the cathode gate GK and K2, and the capacitor C1 is connected as the capacitive circuit between the anode gate GA and K1. When the forward transient voltage with steep rising is fed to the switch 1, the transient current flows to R1 through the second junction capacitor of the switch 1 and the potetial of GK is increased, but since the transient current flows to R2 via C1, the potential of GK is increased. That is, since any potential of GK and K1 are increased, then the voltage between GK and K1 is not great so much to increase dv/dt. Since this is almost independent on temperature, sufficiently greater dv/dt rating can be obtained.
JP12258678A 1978-10-06 1978-10-06 semiconductor switch Expired JPS6043692B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12258678A JPS6043692B2 (en) 1978-10-06 1978-10-06 semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12258678A JPS6043692B2 (en) 1978-10-06 1978-10-06 semiconductor switch

Publications (2)

Publication Number Publication Date
JPS5550740A true JPS5550740A (en) 1980-04-12
JPS6043692B2 JPS6043692B2 (en) 1985-09-30

Family

ID=14839572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12258678A Expired JPS6043692B2 (en) 1978-10-06 1978-10-06 semiconductor switch

Country Status (1)

Country Link
JP (1) JPS6043692B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147667A (en) * 1984-08-11 1986-03-08 Toyo Electric Mfg Co Ltd Method of controlling self-arc-extinguishing semiconductor element
JPS61158332U (en) * 1985-03-20 1986-10-01
US5767537A (en) * 1996-09-09 1998-06-16 Winbond Electronics Corp. Capacitively triggered silicon controlled rectifier circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147667A (en) * 1984-08-11 1986-03-08 Toyo Electric Mfg Co Ltd Method of controlling self-arc-extinguishing semiconductor element
JPH0578970B2 (en) * 1984-08-11 1993-10-29 Toyo Electric Mfg Co Ltd
JPS61158332U (en) * 1985-03-20 1986-10-01
JPH0438881Y2 (en) * 1985-03-20 1992-09-11
US5767537A (en) * 1996-09-09 1998-06-16 Winbond Electronics Corp. Capacitively triggered silicon controlled rectifier circuit

Also Published As

Publication number Publication date
JPS6043692B2 (en) 1985-09-30

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