JPS5550740A - Semiconductor switch - Google Patents
Semiconductor switchInfo
- Publication number
- JPS5550740A JPS5550740A JP12258678A JP12258678A JPS5550740A JP S5550740 A JPS5550740 A JP S5550740A JP 12258678 A JP12258678 A JP 12258678A JP 12258678 A JP12258678 A JP 12258678A JP S5550740 A JPS5550740 A JP S5550740A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- increased
- semiconductor switch
- cathode
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
Landscapes
- Thyristor Switches And Gates (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To enable to increase dv/dt rating and gate trigger sensitivity even at high temperature, by providing the semiconductor switch of PNPN constitution, resistor, electric short circuit means and capacitive circuit. CONSTITUTION:The resistor R2 is connected to the cathode K1 being one major terminal of the semiconductor switch (PNPN) 1, to build up a new cathode K2, and the resistor R1 being the short circuit means is connected between the cathode gate GK and K2, and the capacitor C1 is connected as the capacitive circuit between the anode gate GA and K1. When the forward transient voltage with steep rising is fed to the switch 1, the transient current flows to R1 through the second junction capacitor of the switch 1 and the potetial of GK is increased, but since the transient current flows to R2 via C1, the potential of GK is increased. That is, since any potential of GK and K1 are increased, then the voltage between GK and K1 is not great so much to increase dv/dt. Since this is almost independent on temperature, sufficiently greater dv/dt rating can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12258678A JPS6043692B2 (en) | 1978-10-06 | 1978-10-06 | semiconductor switch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12258678A JPS6043692B2 (en) | 1978-10-06 | 1978-10-06 | semiconductor switch |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5550740A true JPS5550740A (en) | 1980-04-12 |
JPS6043692B2 JPS6043692B2 (en) | 1985-09-30 |
Family
ID=14839572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12258678A Expired JPS6043692B2 (en) | 1978-10-06 | 1978-10-06 | semiconductor switch |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6043692B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6147667A (en) * | 1984-08-11 | 1986-03-08 | Toyo Electric Mfg Co Ltd | Method of controlling self-arc-extinguishing semiconductor element |
JPS61158332U (en) * | 1985-03-20 | 1986-10-01 | ||
US5767537A (en) * | 1996-09-09 | 1998-06-16 | Winbond Electronics Corp. | Capacitively triggered silicon controlled rectifier circuit |
-
1978
- 1978-10-06 JP JP12258678A patent/JPS6043692B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6147667A (en) * | 1984-08-11 | 1986-03-08 | Toyo Electric Mfg Co Ltd | Method of controlling self-arc-extinguishing semiconductor element |
JPH0578970B2 (en) * | 1984-08-11 | 1993-10-29 | Toyo Electric Mfg Co Ltd | |
JPS61158332U (en) * | 1985-03-20 | 1986-10-01 | ||
JPH0438881Y2 (en) * | 1985-03-20 | 1992-09-11 | ||
US5767537A (en) * | 1996-09-09 | 1998-06-16 | Winbond Electronics Corp. | Capacitively triggered silicon controlled rectifier circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS6043692B2 (en) | 1985-09-30 |
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